Vishay Siliconix SI2301CDS-T1-GE3

Manufacturer No:: SI2301CDS-T1-GE3
Manufacturer:: Vishay Siliconix
Package:: Tape & Reel (TR)
Description:: MOSFET P-CH 20V 3.1A SOT23-3
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Product Introduction

Overview

The SI2301CDS-T1-GE3 is a P-channel MOSFET transistor manufactured by Vishay Siliconix. This component is part of Vishay's TrenchFET® power MOSFET family, known for its high performance and reliability. The SI2301CDS-T1-GE3 is packaged in a SOT-23-3 format, making it suitable for a variety of applications where space is limited. It is lead-free and halogen-free, complying with the RoHS Directive 2002/95/EC and IEC 61249-2-21 standards, ensuring environmental sustainability and safety.

Key Specifications

Parameter	Value
Manufacturer	Vishay Siliconix
Part Number	SI2301CDS-T1-GE3
Package Type	SOT-23-3
Vds (Drain-Source Voltage)	20 V
Vgs (Gate-Source Voltage)	8 V
ID (Drain Current)	2.3 A
RDS(on) (On-Resistance)	0.112 Ω at VGS = -4.5 V
Qg (Total Gate Charge)	3.3 nC (Typ.)
RoHS Compliance	Yes, Lead-free and Halogen-free

Key Features

TrenchFET® power MOSFET technology for high performance and low on-resistance.
Halogen-free and lead-free, complying with RoHS Directive 2002/95/EC and IEC 61249-2-21 standards.
Low on-resistance (RDS(on)) of 0.112 Ω at VGS = -4.5 V.
High drain current (ID) of 2.3 A.
Compact SOT-23-3 package suitable for space-constrained applications.
Low total gate charge (Qg) of 3.3 nC (Typ.).

Applications

The SI2301CDS-T1-GE3 is designed for various applications where a high-performance P-channel MOSFET is required. Key applications include:

Load switch MOSFETs in power management circuits.
DC-DC converters and power supplies.
Motor control and drive circuits.
General-purpose switching applications.

Q & A

What is the part number of this MOSFET?
The part number is SI2301CDS-T1-GE3.
Who is the manufacturer of the SI2301CDS-T1-GE3?
The manufacturer is Vishay Siliconix.
What is the package type of the SI2301CDS-T1-GE3?
The package type is SOT-23-3.
What is the maximum drain-source voltage (Vds) of the SI2301CDS-T1-GE3?
The maximum Vds is 20 V.
What is the maximum drain current (ID) of the SI2301CDS-T1-GE3?
The maximum ID is 2.3 A.
What is the on-resistance (RDS(on)) of the SI2301CDS-T1-GE3 at VGS = -4.5 V?
The on-resistance is 0.112 Ω at VGS = -4.5 V.
Is the SI2301CDS-T1-GE3 RoHS compliant?
Yes, it is lead-free and halogen-free, complying with RoHS Directive 2002/95/EC and IEC 61249-2-21 standards.
What are some typical applications of the SI2301CDS-T1-GE3?
Typical applications include load switch MOSFETs, DC-DC converters, motor control, and general-purpose switching.
What is the total gate charge (Qg) of the SI2301CDS-T1-GE3?
The total gate charge is 3.3 nC (Typ.).
Where can I find the datasheet for the SI2301CDS-T1-GE3?
The datasheet can be found on the official Vishay website or through distributors like Mouser and LCSC.

In Stock

UnitPrice: $0.40

Quantity: 2,122

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Same Series

Part Number	SI2301CDS-T1-GE3	SI2307CDS-T1-GE3	SI2309CDS-T1-GE3	SI2308CDS-T1-GE3	SI2305CDS-T1-GE3	SI2303CDS-T1-GE3	SI2302CDS-T1-GE3	SI2301BDS-T1-GE3	SI2301CDS-T1-BE3	SI2301CDS-T1-E3
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Product Status	Active	Active	Active	Active	Active	Active	Active	Active	Active	Active
FET Type	P-Channel	P-Channel	P-Channel	N-Channel	P-Channel	P-Channel	N-Channel	P-Channel	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	30 V	60 V	60 V	8 V	30 V	20 V	20 V	20 V	20 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)	3.5A (Tc)	1.6A (Tc)	2.6A (Tc)	5.8A (Tc)	2.7A (Tc)	2.6A (Ta)	2.2A (Ta)	2.3A (Ta), 3.1A (Tc)	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	4.5V, 10V	4.5V, 10V	4.5V, 10V	1.8V, 4.5V	4.5V, 10V	2.5V, 4.5V	2.5V, 4.5V	2.5V, 4.5V	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V	88mOhm @ 3.5A, 10V	345mOhm @ 1.25A, 10V	144mOhm @ 1.9A, 10V	35mOhm @ 4.4A, 4.5V	190mOhm @ 1.9A, 10V	57mOhm @ 3.6A, 4.5V	100mOhm @ 2.8A, 4.5V	112mOhm @ 2.8A, 4.5V	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA	3V @ 250µA	3V @ 250µA	3V @ 250µA	1V @ 250µA	3V @ 250µA	850mV @ 250µA	950mV @ 250µA	1V @ 250µA	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V	6.2 nC @ 4.5 V	4.1 nC @ 4.5 V	4 nC @ 10 V	30 nC @ 8 V	8 nC @ 10 V	5.5 nC @ 4.5 V	10 nC @ 4.5 V	10 nC @ 4.5 V	10 nC @ 4.5 V
Vgs (Max)	±8V	±20V	±20V	±20V	±8V	±20V	±8V	±8V	±8V	±8V
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 10 V	340 pF @ 15 V	210 pF @ 30 V	105 pF @ 30 V	960 pF @ 4 V	155 pF @ 15 V	-	375 pF @ 6 V	405 pF @ 10 V	405 pF @ 10 V
FET Feature	-	-	-	-	-	-	-	-	-	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)	1.1W (Ta), 1.8W (Tc)	1W (Ta), 1.7W (Tc)	1.6W (Tc)	960mW (Ta), 1.7W (Tc)	1W (Ta), 2.3W (Tc)	710mW (Ta)	700mW (Ta)	860mW (Ta), 1.6W (Tc)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	10 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	405 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	860mW (Ta), 1.6W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3 (TO-236)
Package / Case:	TO-236-3, SC-59, SOT-23-3

Vishay Siliconix SI2301CDS-T1-GE3

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

Same Series

SI2301CDS-T1-E3

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