Overview
The 2N7002K-T1-E3 is an N-Channel MOSFET produced by Vishay Siliconix. This component is part of the TrenchFET® family, known for its high performance and reliability. It is packaged in a SOT-23 (TO-236) configuration, making it suitable for a variety of applications where space is limited. The 2N7002K-T1-E3 is lead-free and halogen-free, aligning with modern environmental standards.
Key Specifications
Parameter | Symbol | Limit/Value | Unit |
---|---|---|---|
Drain-source voltage | VDS | 60 | V |
Gate-source voltage | VGS | ±20 | V |
Continuous drain current (TJ = 150 °C) | ID | 0.3 | A |
On-resistance (RDS(on)) at VGS = 10 V | RDS(on) | 2 | Ω |
Gate-threshold voltage | VGS(th) | - | - |
Input capacitance | Ciss | 25 | pF |
Turn-off time | td(off) | 35 | ns |
Gate charge (Qg) | Qg | 0.4 | nC |
Key Features
- Low on-resistance: 2 Ω
- Low threshold voltage: 2 V (typ.)
- Low input capacitance: 25 pF
- Fast switching speed: 25 ns turn-off time
- Low input and output leakage
- TrenchFET® power MOSFET technology
- 2000 V ESD protection
- Lead-free and halogen-free packaging
Applications
The 2N7002K-T1-E3 is suitable for a wide range of applications, including but not limited to:
- General-purpose switching
- Load switching
- Power management in portable electronics
- Automotive systems
- Industrial control systems
Q & A
- What is the maximum drain-source voltage of the 2N7002K-T1-E3? The maximum drain-source voltage is 60 V.
- What is the typical on-resistance of the 2N7002K-T1-E3? The typical on-resistance is 2 Ω at VGS = 10 V.
- What is the gate-threshold voltage of the 2N7002K-T1-E3? The gate-threshold voltage is not specified but typically falls within a range that ensures reliable switching.
- Is the 2N7002K-T1-E3 lead-free and halogen-free? Yes, the 2N7002K-T1-E3 is lead-free and halogen-free.
- What is the maximum continuous drain current of the 2N7002K-T1-E3? The maximum continuous drain current is 0.3 A at TJ = 150 °C.
- What is the typical turn-off time of the 2N7002K-T1-E3? The typical turn-off time is 35 ns.
- What is the input capacitance of the 2N7002K-T1-E3? The input capacitance is 25 pF.
- What type of MOSFET technology is used in the 2N7002K-T1-E3? The 2N7002K-T1-E3 uses TrenchFET® power MOSFET technology.
- What is the ESD protection rating of the 2N7002K-T1-E3? The 2N7002K-T1-E3 has 2000 V ESD protection.
- In what package is the 2N7002K-T1-E3 available? The 2N7002K-T1-E3 is available in a SOT-23 (TO-236) package.