2N7002K-T1-E3
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Vishay Siliconix 2N7002K-T1-E3

Manufacturer No:
2N7002K-T1-E3
Manufacturer:
Vishay Siliconix
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002K-T1-E3 is an N-Channel MOSFET produced by Vishay Siliconix. This component is part of the TrenchFET® family, known for its high performance and reliability. It is packaged in a SOT-23 (TO-236) configuration, making it suitable for a variety of applications where space is limited. The 2N7002K-T1-E3 is lead-free and halogen-free, aligning with modern environmental standards.

Key Specifications

ParameterSymbolLimit/ValueUnit
Drain-source voltageVDS60V
Gate-source voltageVGS±20V
Continuous drain current (TJ = 150 °C)ID0.3A
On-resistance (RDS(on)) at VGS = 10 VRDS(on)2Ω
Gate-threshold voltageVGS(th)--
Input capacitanceCiss25pF
Turn-off timetd(off)35ns
Gate charge (Qg)Qg0.4nC

Key Features

  • Low on-resistance: 2 Ω
  • Low threshold voltage: 2 V (typ.)
  • Low input capacitance: 25 pF
  • Fast switching speed: 25 ns turn-off time
  • Low input and output leakage
  • TrenchFET® power MOSFET technology
  • 2000 V ESD protection
  • Lead-free and halogen-free packaging

Applications

The 2N7002K-T1-E3 is suitable for a wide range of applications, including but not limited to:

  • General-purpose switching
  • Load switching
  • Power management in portable electronics
  • Automotive systems
  • Industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the 2N7002K-T1-E3? The maximum drain-source voltage is 60 V.
  2. What is the typical on-resistance of the 2N7002K-T1-E3? The typical on-resistance is 2 Ω at VGS = 10 V.
  3. What is the gate-threshold voltage of the 2N7002K-T1-E3? The gate-threshold voltage is not specified but typically falls within a range that ensures reliable switching.
  4. Is the 2N7002K-T1-E3 lead-free and halogen-free? Yes, the 2N7002K-T1-E3 is lead-free and halogen-free.
  5. What is the maximum continuous drain current of the 2N7002K-T1-E3? The maximum continuous drain current is 0.3 A at TJ = 150 °C.
  6. What is the typical turn-off time of the 2N7002K-T1-E3? The typical turn-off time is 35 ns.
  7. What is the input capacitance of the 2N7002K-T1-E3? The input capacitance is 25 pF.
  8. What type of MOSFET technology is used in the 2N7002K-T1-E3? The 2N7002K-T1-E3 uses TrenchFET® power MOSFET technology.
  9. What is the ESD protection rating of the 2N7002K-T1-E3? The 2N7002K-T1-E3 has 2000 V ESD protection.
  10. In what package is the 2N7002K-T1-E3 available? The 2N7002K-T1-E3 is available in a SOT-23 (TO-236) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002K-T1-E3
2N7002K-T1-E3
MOSFET N-CH 60V 300MA SOT23-3

Similar Products

Part Number 2N7002K-T1-E3 2N7002K-T1-GE3 2N7002-T1-E3 2N7002E-T1-E3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta) 115mA (Ta) 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V - 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V 30 pF @ 25 V 50 pF @ 25 V 21 pF @ 5 V
FET Feature - - - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta) 200mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) TO-236 SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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