IRF740PBF
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Vishay Siliconix IRF740PBF

Manufacturer No:
IRF740PBF
Manufacturer:
Vishay Siliconix
Package:
Tube
Description:
MOSFET N-CH 400V 10A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF740PBF is a third-generation power MOSFET transistor designed and manufactured by Vishay Siliconix. This N-Channel MOSFET is optimized for high-power applications, offering a combination of fast switching, ruggedized device design, low on-resistance, and high voltage ratings. It is particularly suitable for power amplification, motor control, and switching circuits where efficient power handling is crucial.

Key Specifications

Parameter Symbol Limit Unit
Drain-source voltage VDS 400 V
Gate-source voltage VGS ±20 V
Continuous drain current (TC = 25 °C) ID 10 A
Pulsed drain current IDM 40 A
Drain-source on-state resistance (VGS = 10 V, ID = 6.0 A) RDS(on) 0.55 Ω
Total gate charge (VGS = 10 V, ID = 10 A, VDS = 320 V) Qg 63 nC
Gate-source charge (Qgs) Qgs 9.0 nC
Gate-drain charge (Qgd) Qgd 32 nC
Turn-on delay time (td(on)) td(on) 14 ns
Turn-off delay time (td(off)) td(off) 50 ns
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C

Key Features

  • High Power Handling: The IRF740PBF can handle high power levels, making it suitable for demanding applications.
  • Low On-Resistance: It features low on-resistance (RDS(on) = 0.55 Ω at VGS = 10 V, ID = 6.0 A) for efficient power transfer.
  • High Voltage Rating: The transistor has a high voltage rating of 400 V, suitable for various power applications.
  • Fast Switching Speed: It offers fast switching speeds with turn-on and turn-off delay times of 14 ns and 50 ns, respectively.
  • Temperature Stability: The IRF740PBF exhibits good temperature stability under high power conditions.
  • TO-220 Package: Available in a TO-220AB package, which provides mechanical support and thermal dissipation for high-power applications.

Applications

  • Power Amplification: The IRF740PBF is commonly used in high-power audio amplifier designs and other power amplification circuits.
  • Motor Control: It is ideal for motor control applications requiring high power handling and efficient switching.
  • Switching Circuits: The IRF740PBF can be utilized in power switching circuits for efficient power control.
  • Power Supplies: It finds applications in high-power DC power supply units.
  • Motor Drives: The IRF740PBF is used in motor drive circuits for efficient motor control.

Q & A

  1. What is the maximum drain-source voltage of the IRF740PBF?

    The maximum drain-source voltage (VDS) is 400 V.

  2. What is the continuous drain current rating at 25 °C?

    The continuous drain current (ID) at 25 °C is 10 A.

  3. What is the on-resistance of the IRF740PBF at VGS = 10 V and ID = 6.0 A?

    The on-resistance (RDS(on)) is 0.55 Ω at VGS = 10 V and ID = 6.0 A.

  4. What is the total gate charge of the IRF740PBF?

    The total gate charge (Qg) is 63 nC at VGS = 10 V, ID = 10 A, and VDS = 320 V.

  5. What are the turn-on and turn-off delay times of the IRF740PBF?

    The turn-on delay time (td(on)) is 14 ns, and the turn-off delay time (td(off)) is 50 ns.

  6. What is the operating junction and storage temperature range of the IRF740PBF?

    The operating junction and storage temperature range is -55 to +150 °C.

  7. In what package is the IRF740PBF available?

    The IRF740PBF is available in a TO-220AB package.

  8. What are some common applications of the IRF740PBF?

    Common applications include power amplification, motor control, switching circuits, power supplies, and motor drives.

  9. What are some equivalents to the IRF740PBF?

    Some equivalents include the IRF840, IRFP460, and IRF3205.

  10. How should the IRF740PBF be installed to ensure optimal performance?

    Ensure proper connections to the gate, drain, and source terminals, follow recommended PCB layout, and implement adequate thermal management.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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FET Type N-Channel N-Channel P-Channel N-Channel P-Channel N-Channel N-Channel P-Channel N-Channel N-Channel N-Channel N-Channel P-Channel P-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 12 V 450 V 12 V 200 V 20 V 40 V 400 V 20 V 20 V 30 V 20 V 30 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc) 16A (Ta) 8.8A (Tc) 11.5A (Tc) 2.5A (Ta) 12A (Ta) 10.5A (Ta) 5.5A (Tc) 8.7A (Ta) 6.8A (Ta) 8.5A (Ta) 6.7A (Ta) 5.8A (Ta) 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 1.8V, 4.5V 10V 1.8V, 4.5V 10V 4.5V, 10V 4.5V, 10V 10V 2.7V, 4.5V 2.7V, 4.5V 4.5V, 10V 2.7V, 4.5V 4.5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 6A, 10V 550mOhm @ 6A, 10V 7mOhm @ 16A, 4.5V 630mOhm @ 5.3A, 10V 14mOhm @ 11.5A, 4.5V 170mOhm @ 1.5A, 10V 10mOhm @ 12A, 10V 15mOhm @ 10.5A, 10V 1Ohm @ 3.3A, 10V 22mOhm @ 4.1A, 4.5V 35mOhm @ 4.1A, 4.5V 22mOhm @ 4A, 10V 40mOhm @ 3.2A, 4.5V 45mOhm @ 2.8A, 10V 550mOhm @ 6A, 10V 600mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 900mV @ 250µA 4V @ 250µA 900mV @ 250µA 5.5V @ 250µA 3V @ 250µA 3V @ 250µA 4V @ 250µA 700mV @ 250µA (Min) 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 1V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 63 nC @ 10 V 91 nC @ 4.5 V 80 nC @ 10 V 38 nC @ 4.5 V 39 nC @ 10 V 19 nC @ 4.5 V 110 nC @ 10 V 38 nC @ 10 V 48 nC @ 4.5 V 22 nC @ 4.5 V 57 nC @ 10 V 50 nC @ 4.5 V 59 nC @ 10 V 36 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±20V ±20V ±8V ±20V ±8V ±30V ±20V ±20V ±20V ±12V ±12V ±20V ±12V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 1400 pF @ 25 V 8676 pF @ 10 V 1400 pF @ 25 V 3529 pF @ 10 V 940 pF @ 25 V 2050 pF @ 10 V 9250 pF @ 25 V 700 pF @ 25 V 1600 pF @ 15 V 650 pF @ 15 V 1200 pF @ 25 V 1500 pF @ 15 V 1100 pF @ 25 V 1030 pF @ 25 V 526 pF @ 100 V
FET Feature - - - - - - - - - - - - - - - -
Power Dissipation (Max) 125W (Tc) 3.1W (Ta), 125W (Tc) 2.5W (Ta) 125W (Tc) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 74W (Tc) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 125W (Tc) 147W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB D²PAK (TO-263) 8-SOIC TO-220AB 8-SO 8-SO 8-SO 8-SO TO-220AB 8-SO 8-SO 8-SO 8-SO 8-SO TO-220AB TO-220AB
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8-SOIC (0.154", 3.90mm Width) TO-220-3 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-220-3 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-220-3 TO-220-3

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