Overview
The IRFP460PBF is a third-generation Power MOSFET from Vishay Siliconix, designed to offer a superior combination of fast switching, rugged device design, low on-resistance, and high current handling capabilities. This N-Channel MOSFET is packaged in a TO-247 lead-free configuration, making it suitable for a wide range of high-power applications.
Key Specifications
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Drain-source voltage | VDS | 500 | V |
| Gate-source voltage | VGS | ±20 | V |
| Continuous drain current at VGS = 10 V, TC = 25 °C | ID | 20 | A |
| Pulsed drain current | IDM | 80 | A |
| Drain-source on-state resistance at VGS = 10 V, ID = 12 A | RDS(on) | 0.27 | Ω |
| Total gate charge at VGS = 10 V, ID = 20 A, VDS = 400 V | Qg | 210 | nC |
| Gate-source charge at VGS = 10 V, ID = 20 A, VDS = 400 V | Qgs | 29 | nC |
| Gate-drain charge at VGS = 10 V, ID = 20 A, VDS = 400 V | Qgd | 110 | nC |
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C |
| Maximum power dissipation at TC = 25 °C | PD | 280 | W |
Key Features
- Fast Switching: The IRFP460PBF features fast switching times, including turn-on delay time (td(on)) of 18 ns, rise time (tr) of 59 ns, turn-off delay time (td(off)) of 110 ns, and fall time (tf) of 58 ns.
- Rugged Design: The MOSFET is designed with ruggedized device architecture to handle high current and voltage stresses.
- Low On-Resistance: With a drain-source on-state resistance (RDS(on)) of 0.27 Ω at VGS = 10 V and ID = 12 A, this MOSFET minimizes power losses during operation.
- High Current Handling: Capable of handling continuous drain current of 20 A at TC = 25 °C and pulsed drain current of 80 A.
- Integral Reverse p-n Junction Diode: The MOSFET includes an integral reverse p-n junction diode, which helps in reducing the need for external diodes in many applications.
Applications
- Power Supplies: Suitable for use in high-power DC-DC converters and power supplies due to its fast switching and low on-resistance characteristics.
- Motor Control: Used in motor control applications where high current and fast switching are required.
- Audio Amplifiers: Can be used in high-power audio amplifiers to manage high current and voltage demands.
- Industrial Power Systems: Applicable in various industrial power systems requiring reliable and efficient power management.
Q & A
- What is the maximum drain-source voltage (VDS) of the IRFP460PBF?
The maximum drain-source voltage (VDS) is 500 V.
- What is the continuous drain current (ID) at VGS = 10 V and TC = 25 °C?
The continuous drain current (ID) is 20 A.
- What is the pulsed drain current (IDM) rating of the IRFP460PBF?
The pulsed drain current (IDM) is 80 A.
- What is the drain-source on-state resistance (RDS(on)) at VGS = 10 V and ID = 12 A?
The drain-source on-state resistance (RDS(on)) is 0.27 Ω.
- What are the operating junction and storage temperature ranges for the IRFP460PBF?
The operating junction and storage temperature ranges are -55 to +150 °C.
- What is the maximum power dissipation (PD) at TC = 25 °C?
The maximum power dissipation (PD) is 280 W.
- Does the IRFP460PBF include an integral reverse p-n junction diode?
Yes, the IRFP460PBF includes an integral reverse p-n junction diode.
- What are typical applications for the IRFP460PBF?
Typical applications include power supplies, motor control, audio amplifiers, and industrial power systems.
- What is the turn-on delay time (td(on)) of the IRFP460PBF?
The turn-on delay time (td(on)) is 18 ns.
- What is the total gate charge (Qg) at VGS = 10 V, ID = 20 A, and VDS = 400 V?
The total gate charge (Qg) is 210 nC.
