2N7002K-T1-GE3
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Vishay Siliconix 2N7002K-T1-GE3

Manufacturer No:
2N7002K-T1-GE3
Manufacturer:
Vishay Siliconix
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002K-T1-GE3 is an N-Channel MOSFET produced by Vishay Siliconix. This component is part of the TrenchFET® family, known for its low on-resistance and fast switching speeds. It is packaged in a SOT-23 (TO-236) configuration, making it suitable for a variety of applications where space is limited. The MOSFET is lead (Pb)-free and halogen-free, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Limit Unit
Drain-source voltage VDS 60 V
Gate-source voltage VGS ± 20 V
Continuous drain current (TJ = 150 °C) ID 0.3 A
On-resistance (RDS(on)) at VGS = 10 V RDS(on) 2 Ω
Gate charge (Qg) typical Qg 0.4 nC
Turn-off time (td(off)) td(off) 25 ns
Input capacitance (Ciss) typical Ciss 25 pF
ESD protection 2000 V

Key Features

  • Low on-resistance: 2 Ω
  • Low threshold voltage: 2 V (typical)
  • Low input capacitance: 25 pF
  • Fast switching speed: 25 ns turn-off time
  • Low input and output leakage
  • TrenchFET® power MOSFET technology
  • 2000 V ESD protection
  • Lead (Pb)-free and halogen-free packaging

Applications

The 2N7002K-T1-GE3 is suitable for a wide range of applications, including:

  • Switching circuits in consumer electronics
  • Power management in portable devices
  • Automotive systems requiring low on-resistance and fast switching
  • Industrial control systems
  • General-purpose switching applications where space is limited

Q & A

  1. What is the maximum drain-source voltage (VDS) for the 2N7002K-T1-GE3?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical on-resistance (RDS(on)) of the 2N7002K-T1-GE3?

    The typical on-resistance (RDS(on)) is 2 Ω at VGS = 10 V.

  3. What is the gate charge (Qg) of the 2N7002K-T1-GE3?

    The gate charge (Qg) is typically 0.4 nC.

  4. What is the turn-off time (td(off)) of the 2N7002K-T1-GE3?

    The turn-off time (td(off)) is 25 ns.

  5. Does the 2N7002K-T1-GE3 have ESD protection?

    Yes, it has 2000 V ESD protection.

  6. What type of packaging does the 2N7002K-T1-GE3 use?

    The 2N7002K-T1-GE3 is packaged in a SOT-23 (TO-236) configuration.

  7. Is the 2N7002K-T1-GE3 lead (Pb)-free and halogen-free?

    Yes, it is lead (Pb)-free and halogen-free.

  8. What are some common applications for the 2N7002K-T1-GE3?

    Common applications include switching circuits in consumer electronics, power management in portable devices, automotive systems, industrial control systems, and general-purpose switching.

  9. What is the maximum continuous drain current (ID) for the 2N7002K-T1-GE3?

    The maximum continuous drain current (ID) is 0.3 A at TJ = 150 °C.

  10. What is the typical input capacitance (Ciss) of the 2N7002K-T1-GE3?

    The typical input capacitance (Ciss) is 25 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002K-T1-E3
2N7002K-T1-E3
MOSFET N-CH 60V 300MA SOT23-3

Similar Products

Part Number 2N7002K-T1-GE3 2N7002-T1-GE3 2N7002E-T1-GE3 2N7002K-T1-E3
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 115mA (Ta) 240mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 3Ohm @ 250mA, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V - 0.6 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V 50 pF @ 25 V 21 pF @ 5 V 30 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 350mW (Ta) 200mW (Ta) 350mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) TO-236 TO-236 SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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