Overview
The 2N7002E-T1-E3 is an N-channel enhancement mode MOSFET manufactured by Vishay Siliconix. This device is designed for low-power switching and analog circuits, offering a combination of low on-resistance, low threshold voltage, and fast switching speeds. It is packaged in a TO-236 (SOT-23) case, making it suitable for surface mount applications. The MOSFET is RoHS compliant and halogen-free, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Test Conditions | Typical | Maximum | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | VGS = 0 V, ID = 10 µA | - | 60 | V |
| Gate-Source Voltage | VGS | - | - | ±20 | V |
| Continuous Drain Current | ID | TJ = 150 °C | - | 240 mA | A |
| Pulsed Drain Current | IDM | Pulse width ≤ 300 µs, duty cycle ≤ 2% | - | 1300 mA | A |
| Power Dissipation | PD | TA = 25 °C | - | 0.35 W | W |
| On-Resistance | RDS(on) | VGS = 10 V, ID = 250 mA | 1.2 | 3 Ω | Ω |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 µA | 1 | 2.5 V | V |
| Input Capacitance | Ciss | VDS = 5 V, VGS = 0 V, f = 1 MHz | 21 | - pF | pF |
| Turn-On Time | tON | VDD = 10 V, RL = 40 Ω, ID ≈ 250 mA, VGEN = 10 V, Rg = 10 Ω | 13 | 20 ns | ns |
| Turn-Off Time | tOFF | VDD = 10 V, RL = 40 Ω, ID ≈ 250 mA, VGEN = 10 V, Rg = 10 Ω | 18 | 25 ns | ns |
Key Features
- Low On-Resistance: The 2N7002E-T1-E3 has a low on-resistance of 3 Ω at VGS = 10 V, making it efficient for switching applications.
- Low Threshold Voltage: With a typical gate-threshold voltage of 2 V, this MOSFET can be easily driven by logic-level signals.
- Fast Switching Speed: It features fast switching times, with a turn-on time of 13 ns and a turn-off time of 18 ns.
- Low Input Capacitance: The input capacitance is 21 pF, which is beneficial for high-speed and low-noise applications.
- RoHS Compliant and Halogen-Free: The device is compliant with the RoHS directive and is halogen-free, aligning with environmental standards.
- Direct Logic-Level Interface: It can be directly driven by TTL/CMOS logic without the need for a buffer.
Applications
- Switching Circuits: Ideal for various switching applications due to its low on-resistance and fast switching speeds.
- Power Management: Used in power management circuits for battery-operated systems and other low-power devices.
- LED Lighting: Suitable for LED lighting circuits where low power consumption and high efficiency are required.
- Mobile Device Power Switching: Employed in mobile devices for power switching due to its low voltage operation and high-speed capabilities.
- Solid-State Relays: Used in solid-state relays and other applications requiring low error voltage and high reliability.
Q & A
- What is the maximum drain-source voltage of the 2N7002E-T1-E3?
The maximum drain-source voltage (VDS) is 60 V.
- What is the typical on-resistance of the 2N7002E-T1-E3?
The typical on-resistance (RDS(on)) is 3 Ω at VGS = 10 V.
- What is the gate-threshold voltage of the 2N7002E-T1-E3?
The gate-threshold voltage (VGS(th)) is typically 2 V.
- What is the maximum continuous drain current of the 2N7002E-T1-E3?
The maximum continuous drain current (ID) is 240 mA.
- Is the 2N7002E-T1-E3 RoHS compliant?
Yes, the 2N7002E-T1-E3 is RoHS compliant and halogen-free.
- What is the typical turn-on time of the 2N7002E-T1-E3?
The typical turn-on time (tON) is 13 ns.
- What is the typical turn-off time of the 2N7002E-T1-E3?
The typical turn-off time (tOFF) is 18 ns.
- What is the input capacitance of the 2N7002E-T1-E3?
The input capacitance (Ciss) is 21 pF.
- What are some common applications of the 2N7002E-T1-E3?
Common applications include switching circuits, power management, LED lighting, mobile device power switching, and solid-state relays.
- What package type is the 2N7002E-T1-E3 available in?
The 2N7002E-T1-E3 is available in a TO-236 (SOT-23) package.
