Overview
The 2N7002E-T1-GE3 is a N-Channel MOSFET transistor produced by Vishay Siliconix. This component is designed for general-purpose small signal applications and is known for its low on-resistance, low threshold voltage, and fast switching speed. It is packaged in a SOT-23 (TO-236-3) case, making it suitable for surface mount technology (SMT) assembly. The 2N7002E-T1-GE3 is lead-free and halogen-free, complying with RoHS Directive 2002/95/EC and IEC 61249-2-21 standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 60 | V |
| Gate-Source Voltage (Vgs) | ±20 | V |
| Continuous Drain Current (Id) | 240 | mA |
| Pulsed Drain Current (Idm) | 1300 | mA |
| Power Dissipation (Pd) | 0.35 | W |
| On-State Resistance (Rds(on)) | 3 | Ω |
| Gate Threshold Voltage (Vgs(th)) | 1 - 2.5 | V |
| Input Capacitance (Ciss) | 25 | pF |
| Gate Charge (Qg) | 0.6 | nC |
| Switching Time (td(on), td(off)) | 13-20 ns, 18-25 ns | ns |
| Operating Junction and Storage Temperature Range | -55 to 150 | °C |
Key Features
- Halogen-free and lead-free, complying with RoHS Directive 2002/95/EC and IEC 61249-2-21 standards.
- Low on-resistance of 3 Ω at Vgs = 10 V.
- Low threshold voltage of 1 to 2.5 V.
- Low input capacitance of 25 pF.
- Fast switching speed with turn-on and turn-off times of 13-20 ns and 18-25 ns, respectively.
- Low input and output leakage currents.
- Easily driven without a buffer due to low-voltage operation.
Applications
- Direct logic-level interface: TTL/CMOS.
- Drivers for relays, solenoids, lamps, hammers, displays, and memories.
- Battery-operated systems.
- Solid-state relays.
Q & A
- What is the drain-source voltage rating of the 2N7002E-T1-GE3 MOSFET?
The drain-source voltage rating is 60 V.
- What is the maximum continuous drain current for the 2N7002E-T1-GE3?
The maximum continuous drain current is 240 mA.
- What is the on-state resistance of the 2N7002E-T1-GE3?
The on-state resistance is 3 Ω at Vgs = 10 V.
- What is the gate threshold voltage range for the 2N7002E-T1-GE3?
The gate threshold voltage range is 1 to 2.5 V.
- Is the 2N7002E-T1-GE3 compliant with RoHS and halogen-free standards?
Yes, it is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21.
- What are the typical switching times for the 2N7002E-T1-GE3?
The turn-on time is 13-20 ns, and the turn-off time is 18-25 ns.
- What is the input capacitance of the 2N7002E-T1-GE3?
The input capacitance is 25 pF.
- What are some common applications for the 2N7002E-T1-GE3?
Common applications include direct logic-level interfaces, drivers for relays and solenoids, battery-operated systems, and solid-state relays.
- What is the operating junction and storage temperature range for the 2N7002E-T1-GE3?
The operating junction and storage temperature range is -55 to 150 °C.
- What package types are available for the 2N7002E-T1-GE3?
The 2N7002E-T1-GE3 is available in SOT-23 (TO-236-3) packages.
