Overview
The IRFB4110PBF is a 100V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications that require performance and ruggedness. The IRFB4110PBF is housed in a TO-220 package, a standard through-hole power package, making it suitable for a wide range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Key Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | - | - | V |
| Static Drain-to-Source On-Resistance | RDS(on) | - | 3.7 | 4.5 | mΩ |
| Gate Threshold Voltage | VGS(th) | 2.0 | - | 4.0 | V |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID @ TC = 25°C | - | - | - | A |
| Pulsed Drain Current | IDM | - | - | - | A |
| Maximum Power Dissipation | PD @TC = 25°C | - | - | - | W |
| Operating Junction Temperature | TJ | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | -55 | - | 175 | °C |
Key Features
- Industry standard through-hole power package (TO-220).
- High-current rating and high-current carrying capability package.
- Product qualification according to JEDEC standard.
- Silicon optimized for applications switching below 100 kHz.
- Softer body-diode compared to previous silicon generation.
- Wide portfolio available.
- Lead Free and RoHS Compliant, Halogen-Free.
- Enhanced body diode dV/dt and dI/dt capability.
- Improved Gate, Avalanche and Dynamic dv/dt Ruggedness.
Applications
- DC motors.
- Battery management systems.
- Inverters.
- DC-DC converters.
- High Efficiency Synchronous Rectification in SMPS.
- Uninterruptible Power Supply.
- High Speed Power Switching.
- Hard Switched and High Frequency Circuits.
Q & A
- What is the drain-to-source breakdown voltage of the IRFB4110PBF?
The drain-to-source breakdown voltage (V(BR)DSS) is 100V. - What is the typical static drain-to-source on-resistance of the IRFB4110PBF?
The typical static drain-to-source on-resistance (RDS(on)) is 3.7 mΩ. - What is the gate threshold voltage range of the IRFB4110PBF?
The gate threshold voltage (VGS(th)) ranges from 2.0V to 4.0V. - What are the operating and storage temperature ranges for the IRFB4110PBF?
The operating junction temperature (TJ) ranges from -55°C to 175°C, and the storage temperature range (TSTG) is also -55°C to 175°C. - Is the IRFB4110PBF RoHS compliant and lead-free?
Yes, the IRFB4110PBF is RoHS compliant and lead-free. - What types of applications is the IRFB4110PBF optimized for?
The IRFB4110PBF is optimized for low frequency applications requiring performance and ruggedness, such as DC motors, battery management systems, inverters, and DC-DC converters. - What package type does the IRFB4110PBF come in?
The IRFB4110PBF comes in a TO-220 package. - What are some of the key features of the IRFB4110PBF?
Key features include high-current rating, softer body-diode, and improved gate, avalanche, and dynamic dv/dt ruggedness. - Is the IRFB4110PBF suitable for high-speed power switching applications?
Yes, the IRFB4110PBF is suitable for high-speed power switching applications. - What is the typical forward transconductance of the IRFB4110PBF?
The typical forward transconductance (gfs) is 160 S.
