IRFB4115PBF
  • Share:

Infineon Technologies IRFB4115PBF

Manufacturer No:
IRFB4115PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 150V 104A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFB4115PBF is a single N-channel power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, optimized for low RDS(on) and high current capability. It features TrenchFET Gen 6 Technology and is housed in a TO-220-3 (TO-220AB) package. The IRFB4115PBF is designed for applications requiring high performance and ruggedness, particularly in low frequency scenarios.

Key Specifications

Parameter Value Units
Fet Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 150 V
Drain-Source On Resistance-Max (RDS(on)) 11
Rated Power Dissipation (Pd) 380 W
Gate Charge (Qg) 77 nC
Gate-Source Voltage-Max (Vgss) 20 V
Drain Current (Id) 104 A
Turn-on Delay Time 18 ns
Turn-off Delay Time 41 ns
Rise Time 73 ns
Fall Time 39 ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold (Vgs(th)) 5 V
Input Capacitance (Ciss) 5270 pF
Output Capacitance (Coss) 490 pF
Package Style TO-220-3 (TO-220AB)
Mounting Method Through Hole

Key Features

  • Improved gate, avalanche, and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA (Safe Operating Area)
  • Enhanced body diode dV/dt and di/dt capability
  • Lead-free, RoHS Compliant
  • Qualified to industrial grade and MSL1 (Moisture Sensitivity Level 1)
  • Standard pinout allows for drop-in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density

Applications

  • Power supplies
  • High power DC motors
  • Inverters
  • Power tools
  • High Efficiency Synchronous Rectification in SMPS (Switch-Mode Power Supplies)
  • Uninterruptible Power Supply (UPS)
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
  • DC-DC converters
  • Battery management systems

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRFB4115PBF?

    The maximum drain-to-source voltage (Vdss) is 150V.

  2. What is the typical on-state resistance (RDS(on)) of the IRFB4115PBF?

    The typical on-state resistance (RDS(on)) is 9.3 mΩ, with a maximum of 11 mΩ.

  3. What is the maximum drain current (Id) of the IRFB4115PBF?

    The maximum drain current (Id) is 104 A.

  4. What is the operating temperature range of the IRFB4115PBF?

    The operating temperature range is -55°C to +175°C.

  5. Is the IRFB4115PBF RoHS compliant?

    Yes, the IRFB4115PBF is lead-free and RoHS compliant.

  6. What package style does the IRFB4115PBF come in?

    The IRFB4115PBF comes in a TO-220-3 (TO-220AB) package.

  7. What are some of the key features of the IRFB4115PBF?

    Key features include improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, and enhanced body diode dV/dt and di/dt capability.

  8. What are some common applications for the IRFB4115PBF?

    Common applications include power supplies, high power DC motors, inverters, power tools, and high efficiency synchronous rectification in SMPS.

  9. What is the maximum gate-source voltage (Vgss) of the IRFB4115PBF?

    The maximum gate-source voltage (Vgss) is 20V.

  10. What is the gate threshold voltage (Vgs(th)) of the IRFB4115PBF?

    The gate threshold voltage (Vgs(th)) is 5V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:104A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 62A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):380W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.55
60

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFB4115PBF IRFB4615PBF IRFB4215PBF IRFB4110PBF IRFB4115GPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 60 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 104A (Tc) 35A (Tc) 115A (Tc) 120A (Tc) 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 62A, 10V 39mOhm @ 21A, 10V 9mOhm @ 54A, 10V 4.5mOhm @ 75A, 10V 11mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 100µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 26 nC @ 10 V 170 nC @ 10 V 210 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V 1750 pF @ 50 V 4080 pF @ 25 V 9620 pF @ 50 V 5270 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 380W (Tc) 144W (Tc) 270W (Tc) 370W (Tc) 380W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247

Related Product By Brand

BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC846SH6727XTSA1
BC846SH6727XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC847CB5000
BC847CB5000
Infineon Technologies
BIPOLAR TRANSISTOR TRANSISTOR
BC 846B B5003
BC 846B B5003
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
BSS138W E6327
BSS138W E6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
TLE6251DST
TLE6251DST
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS716GBXUMA1
BTS716GBXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
TDA21470AUMA1
TDA21470AUMA1
Infineon Technologies
INT. POWERSTAGE/DRIVER