IRFB4115PBF
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Infineon Technologies IRFB4115PBF

Manufacturer No:
IRFB4115PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 150V 104A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFB4115PBF is a single N-channel power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, optimized for low RDS(on) and high current capability. It features TrenchFET Gen 6 Technology and is housed in a TO-220-3 (TO-220AB) package. The IRFB4115PBF is designed for applications requiring high performance and ruggedness, particularly in low frequency scenarios.

Key Specifications

Parameter Value Units
Fet Type N-Channel
No of Channels 1
Drain-to-Source Voltage (Vdss) 150 V
Drain-Source On Resistance-Max (RDS(on)) 11
Rated Power Dissipation (Pd) 380 W
Gate Charge (Qg) 77 nC
Gate-Source Voltage-Max (Vgss) 20 V
Drain Current (Id) 104 A
Turn-on Delay Time 18 ns
Turn-off Delay Time 41 ns
Rise Time 73 ns
Fall Time 39 ns
Operating Temp Range -55°C to +175°C
Gate Source Threshold (Vgs(th)) 5 V
Input Capacitance (Ciss) 5270 pF
Output Capacitance (Coss) 490 pF
Package Style TO-220-3 (TO-220AB)
Mounting Method Through Hole

Key Features

  • Improved gate, avalanche, and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA (Safe Operating Area)
  • Enhanced body diode dV/dt and di/dt capability
  • Lead-free, RoHS Compliant
  • Qualified to industrial grade and MSL1 (Moisture Sensitivity Level 1)
  • Standard pinout allows for drop-in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density

Applications

  • Power supplies
  • High power DC motors
  • Inverters
  • Power tools
  • High Efficiency Synchronous Rectification in SMPS (Switch-Mode Power Supplies)
  • Uninterruptible Power Supply (UPS)
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits
  • DC-DC converters
  • Battery management systems

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRFB4115PBF?

    The maximum drain-to-source voltage (Vdss) is 150V.

  2. What is the typical on-state resistance (RDS(on)) of the IRFB4115PBF?

    The typical on-state resistance (RDS(on)) is 9.3 mΩ, with a maximum of 11 mΩ.

  3. What is the maximum drain current (Id) of the IRFB4115PBF?

    The maximum drain current (Id) is 104 A.

  4. What is the operating temperature range of the IRFB4115PBF?

    The operating temperature range is -55°C to +175°C.

  5. Is the IRFB4115PBF RoHS compliant?

    Yes, the IRFB4115PBF is lead-free and RoHS compliant.

  6. What package style does the IRFB4115PBF come in?

    The IRFB4115PBF comes in a TO-220-3 (TO-220AB) package.

  7. What are some of the key features of the IRFB4115PBF?

    Key features include improved gate, avalanche, and dynamic dV/dt ruggedness, fully characterized capacitance and avalanche SOA, and enhanced body diode dV/dt and di/dt capability.

  8. What are some common applications for the IRFB4115PBF?

    Common applications include power supplies, high power DC motors, inverters, power tools, and high efficiency synchronous rectification in SMPS.

  9. What is the maximum gate-source voltage (Vgss) of the IRFB4115PBF?

    The maximum gate-source voltage (Vgss) is 20V.

  10. What is the gate threshold voltage (Vgs(th)) of the IRFB4115PBF?

    The gate threshold voltage (Vgs(th)) is 5V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:104A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 62A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):380W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4115PBF IRFB4615PBF IRFB4215PBF IRFB4110PBF IRFB4115GPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 60 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 104A (Tc) 35A (Tc) 115A (Tc) 120A (Tc) 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 62A, 10V 39mOhm @ 21A, 10V 9mOhm @ 54A, 10V 4.5mOhm @ 75A, 10V 11mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 100µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 26 nC @ 10 V 170 nC @ 10 V 210 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V 1750 pF @ 50 V 4080 pF @ 25 V 9620 pF @ 50 V 5270 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 380W (Tc) 144W (Tc) 270W (Tc) 370W (Tc) 380W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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