Overview
The NVMFS5C682NLAFT1G is a single N-channel MOSFET produced by onsemi, designed for high-performance applications. This device features a voltage rating of 60 V and a continuous drain current of 25 A at 25°C. It is part of the DFN5 package family, which offers a compact footprint of 5x6 mm, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. Additionally, it is Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Continuous Drain Current (TC = 25°C) | ID | 25 | A |
| Continuous Drain Current (TC = 100°C) | ID | 18 | A |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 18 - 21 | mΩ |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 10 A) | RDS(on) | 26 - 31.5 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 5.3 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 43 | °C/W |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
Key Features
- Compact Design: The DFN5 package offers a small footprint of 5x6 mm, ideal for compact designs.
- Low RDS(on): Minimizes conduction losses with a low drain-to-source on resistance.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: Available in a wettable flank version (NVMFS5C682NLWF) for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
The NVMFS5C682NLAFT1G MOSFET is suitable for various high-performance applications, including but not limited to:
- Automotive systems, such as power management and motor control.
- Industrial power supplies and DC-DC converters.
- Power management in consumer electronics.
- Renewable energy systems, such as solar and wind power.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C682NLAFT1G MOSFET?
The maximum drain-to-source voltage is 60 V. - What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 25 A. - What is the typical drain-to-source on resistance at VGS = 10 V and ID = 10 A?
The typical drain-to-source on resistance is 18-21 mΩ. - Is the NVMFS5C682NLAFT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable. - What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance is 5.3 °C/W. - What are the operating and storage temperature ranges?
The operating and storage temperature ranges are -55 to +175 °C. - Is the device Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant. - What package options are available for this MOSFET?
The device is available in DFN5 and DFNW5 (with wettable flanks) packages. - What are some typical applications for this MOSFET?
Typical applications include automotive systems, industrial power supplies, consumer electronics, and renewable energy systems. - What is the significance of the wettable flank option?
The wettable flank option enhances optical inspection, which is crucial for quality control in manufacturing processes.
