Overview
The NVMFS5C682NLWFAFT1G is a power MOSFET from onsemi, designed for high-performance applications requiring low on-resistance and minimal power losses. This single N-channel MOSFET features a 60 V drain-to-source voltage rating, a low on-resistance (RDS(on)) of 21 mΩ at 10 V gate-to-source voltage, and a continuous drain current of 25 A. It is packaged in a compact DFN5 (5x6 mm) case, making it ideal for space-constrained designs. The device is AEC-Q101 qualified, PPAP capable, and is Pb-free and RoHS compliant, ensuring reliability and environmental compliance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 25 | A |
| Continuous Drain Current (TC = 100°C) | ID | 18 | A |
| Power Dissipation (TC = 25°C) | PD | 28 | W |
| Power Dissipation (TC = 100°C) | PD | 14 | W |
| On-Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 21 | mΩ |
| On-Resistance (VGS = 4.5 V, ID = 10 A) | RDS(on) | 31.5 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Total Gate Charge (VGS = 10 V, VDS = 48 V; ID = 10 A) | QG(TOT) | 5.0 | nC |
| Junction-to-Case Thermal Resistance | RθJC | 5.3 | °C/W |
Key Features
- Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with an on-resistance of 21 mΩ at 10 V gate-to-source voltage.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: Enhanced optical inspection with the wettable flank option (NVMFS5C682NLWFAFT1G).
- AEC-Q101 Qualified and PPAP Capable: Ensures automotive-grade reliability and process capability.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
The NVMFS5C682NLWFAFT1G is suitable for a variety of high-power applications, including but not limited to:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for automotive power management and control systems.
- Power supplies: Used in high-efficiency power supply designs where low on-resistance and minimal power losses are critical.
- Motor control: Suitable for motor drive applications requiring high current handling and low conduction losses.
- Industrial control: Used in industrial control systems, such as inverter and converter applications.
Q & A
- What is the maximum drain-to-source voltage rating of the NVMFS5C682NLWFAFT1G? The maximum drain-to-source voltage rating is 60 V.
- What is the continuous drain current at 25°C and 100°C? The continuous drain current is 25 A at 25°C and 18 A at 100°C.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 10 A? The on-resistance is 21 mΩ.
- Is the NVMFS5C682NLWFAFT1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What package type is used for the NVMFS5C682NLWFAFT1G? It is packaged in a DFN5 (5x6 mm) case.
- Is the device Pb-free and RoHS compliant? Yes, the device is Pb-free and RoHS compliant.
- What is the junction-to-case thermal resistance? The junction-to-case thermal resistance is 5.3 °C/W.
- What is the total gate charge at VGS = 10 V and VDS = 48 V? The total gate charge is 5.0 nC.
- What are the typical applications for this MOSFET? It is used in automotive systems, power supplies, motor control, and industrial control systems.
- Does the NVMFS5C682NLWFAFT1G have a wettable flank option? Yes, it has a wettable flank option for enhanced optical inspection.
