Overview
The NVMFS5C612NLWFAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5 (5x6 mm) package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 60 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 250 | A |
| Junction-to-Case Thermal Resistance (RJC) | 0.9 | °C/W |
| Junction-to-Ambient Thermal Resistance (RJA) | 39 | °C/W |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 50 A | 1.13 - 1.36 | mΩ |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5 V, ID = 50 A | 1.65 - 2.3 | mΩ |
| Gate Threshold Voltage (VGS(TH)) | 1.2 - 2.0 | V |
| Total Gate Charge (QG(TOT)) at VGS = 10 V, VDS = 30 V; ID = 50 A | 91 | nC |
Key Features
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flank Option (NVMFS5C612NLWF) for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- Pb-free and RoHS Compliant
Applications
The NVMFS5C612NLWFAFT1G is suitable for a variety of high-current applications, including:
- Automotive Systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power Supplies: Its low on-resistance and high current handling make it suitable for high-efficiency power supply designs.
- Motor Control: It can be used in motor control circuits where high current and low losses are critical.
- Industrial Power Systems: It is applicable in various industrial power systems requiring reliable and efficient power management.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFS5C612NLWFAFT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 250 A.
- What is the junction-to-case thermal resistance (RJC) of this MOSFET?
The junction-to-case thermal resistance (RJC) is 0.9 °C/W.
- Is the NVMFS5C612NLWFAFT1G AEC-Q101 qualified?
Yes, the NVMFS5C612NLWFAFT1G is AEC-Q101 qualified.
- What is the typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 50 A?
The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 50 A is 1.36 mΩ.
- Is the NVMFS5C612NLWFAFT1G Pb-free and RoHS compliant?
Yes, the NVMFS5C612NLWFAFT1G is Pb-free and RoHS compliant.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.
- What is the total gate charge (QG(TOT)) at VGS = 10 V, VDS = 30 V, and ID = 50 A?
The total gate charge (QG(TOT)) at VGS = 10 V, VDS = 30 V, and ID = 50 A is 91 nC.
- What are the typical applications of the NVMFS5C612NLWFAFT1G?
Typical applications include automotive systems, power supplies, motor control, and industrial power systems.
- What is the package type of the NVMFS5C612NLWFAFT1G?
The package type is DFN5 (5x6 mm).
