Overview
The NVMFS5C682NLT1G is a power MOSFET produced by ON Semiconductor. This single N-channel MOSFET is designed for high-performance applications, offering a compact footprint and advanced electrical characteristics. It is particularly suited for use in automotive and industrial systems where reliability and efficiency are critical.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | ID | 25 | A |
| On-Resistance | RDS(on) | 21 mΩ @ 10 V | mΩ |
| Threshold Gate Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Input Capacitance | CISS | 410 pF | pF |
| Output Capacitance | COSS | 210 pF | pF |
| Reverse Transfer Capacitance | CRSS | 7.0 pF | pF |
| Total Gate Charge | QG(TOT) | 2.5 nC @ 4.5 V, 5.0 nC @ 10 V | nC |
| Junction-to-Case Thermal Resistance | RθJC | 5.3 °C/W | °C/W |
Key Features
- Compact Design: The MOSFET features a small footprint of 5x6 mm, making it ideal for space-constrained applications.
- Low On-Resistance: With an RDS(on) of 21 mΩ at 10 V, it minimizes conduction losses.
- Low QG and Capacitance: Low total gate charge and capacitance reduce driver losses.
- Wettable Flank Option: The NVMFS5C682NLWF version offers wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with international regulations.
Applications
- Automotive Systems: Suitable for use in various automotive applications due to its AEC-Q101 qualification.
- Industrial Power Systems: Ideal for high-power industrial applications requiring efficient and reliable MOSFETs.
- Power Management Systems: Used in power management systems where low on-resistance and high current handling are necessary.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C682NLT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is 25 A.
- What is the on-resistance of the NVMFS5C682NLT1G?
The on-resistance (RDS(on)) is 21 mΩ at 10 V.
- Is the NVMFS5C682NLT1G Pb-Free and RoHS compliant?
- What is the junction-to-case thermal resistance of this MOSFET?
The junction-to-case thermal resistance (RθJC) is 5.3 °C/W.
- Does the NVMFS5C682NLT1G have a wettable flank option?
- Is the NVMFS5C682NLT1G AEC-Q101 qualified?
- What is the typical input capacitance of the NVMFS5C682NLT1G?
The typical input capacitance (CISS) is 410 pF.
- What are the package options for the NVMFS5C682NLT1G?
The MOSFET is available in DFN5 and DFNW5 packages.
- What is the total gate charge of the NVMFS5C682NLT1G?
The total gate charge (QG(TOT)) is 2.5 nC at 4.5 V and 5.0 nC at 10 V.
