NVMFS5C612NLAFT1G
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onsemi NVMFS5C612NLAFT1G

Manufacturer No:
NVMFS5C612NLAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 38A/250A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS5C612NLAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of high-power applications. With its robust construction and advanced semiconductor technology, the NVMFS5C612NLAFT1G is ideal for systems requiring high current handling and low on-resistance.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id)250 A
On Resistance (Rds(on))0.00113 ohm
Maximum Operating Temperature+175°C
Power Dissipation (Pd)167 W, 3.8 W
Channel ModeEnhancement
QualificationAEC-Q101

Key Features

  • High current handling capability of up to 250 A.
  • Low on-resistance of 0.00113 ohm, reducing power losses.
  • High maximum operating temperature of +175°C, ensuring reliability in demanding environments.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Enhancement mode operation for efficient switching.

Applications

The NVMFS5C612NLAFT1G is versatile and can be used in various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and battery management systems.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power DC-DC converters and power factor correction circuits.

Q & A

  1. What is the maximum drain-source voltage of the NVMFS5C612NLAFT1G?
    The maximum drain-source voltage is 60 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 250 A.
  3. What is the on-resistance of the NVMFS5C612NLAFT1G?
    The on-resistance is 0.00113 ohm.
  4. What is the maximum operating temperature of this device?
    The maximum operating temperature is +175°C.
  5. Is the NVMFS5C612NLAFT1G qualified for automotive use?
    Yes, it is AEC-Q101 qualified.
  6. What type of channel mode does this MOSFET operate in?
    It operates in enhancement mode.
  7. What are some typical applications for the NVMFS5C612NLAFT1G?
    Typical applications include automotive systems, industrial power supplies, renewable energy systems, and high-power DC-DC converters.
  8. What is the power dissipation capability of this MOSFET?
    The power dissipation is 167 W and 3.8 W.
  9. Where can I find detailed specifications for the NVMFS5C612NLAFT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and Mouser.
  10. Is the NVMFS5C612NLAFT1G available for purchase?
    Yes, it is available for purchase, although it may be out of stock and available on backorder at some distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.36mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS5C612NLAFT1G NVMFS5C682NLAFT1G NVMFS5C612NLAFT3G NVMFS5C612NLWFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 250A (Tc) 8.8A (Ta), 25A (Tc) 38A (Ta), 250A (Tc) 36A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.36mOhm @ 50A, 10V 21mOhm @ 10A, 10V 1.36mOhm @ 50A, 10V 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 16µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 5 nC @ 10 V 91 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6660 pF @ 25 V 410 pF @ 25 V 6660 pF @ 25 V 6660 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.8W (Ta), 167W (Tc) 3.5W (Ta), 28W (Tc) 3.8W (Ta), 167W (Tc) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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