NVMFS5C612NLAFT1G
  • Share:

onsemi NVMFS5C612NLAFT1G

Manufacturer No:
NVMFS5C612NLAFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 38A/250A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMFS5C612NLAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer exceptional electrical and thermal performance, making it suitable for a wide range of high-power applications. With its robust construction and advanced semiconductor technology, the NVMFS5C612NLAFT1G is ideal for systems requiring high current handling and low on-resistance.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id)250 A
On Resistance (Rds(on))0.00113 ohm
Maximum Operating Temperature+175°C
Power Dissipation (Pd)167 W, 3.8 W
Channel ModeEnhancement
QualificationAEC-Q101

Key Features

  • High current handling capability of up to 250 A.
  • Low on-resistance of 0.00113 ohm, reducing power losses.
  • High maximum operating temperature of +175°C, ensuring reliability in demanding environments.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Enhancement mode operation for efficient switching.

Applications

The NVMFS5C612NLAFT1G is versatile and can be used in various high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and battery management systems.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power DC-DC converters and power factor correction circuits.

Q & A

  1. What is the maximum drain-source voltage of the NVMFS5C612NLAFT1G?
    The maximum drain-source voltage is 60 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 250 A.
  3. What is the on-resistance of the NVMFS5C612NLAFT1G?
    The on-resistance is 0.00113 ohm.
  4. What is the maximum operating temperature of this device?
    The maximum operating temperature is +175°C.
  5. Is the NVMFS5C612NLAFT1G qualified for automotive use?
    Yes, it is AEC-Q101 qualified.
  6. What type of channel mode does this MOSFET operate in?
    It operates in enhancement mode.
  7. What are some typical applications for the NVMFS5C612NLAFT1G?
    Typical applications include automotive systems, industrial power supplies, renewable energy systems, and high-power DC-DC converters.
  8. What is the power dissipation capability of this MOSFET?
    The power dissipation is 167 W and 3.8 W.
  9. Where can I find detailed specifications for the NVMFS5C612NLAFT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and Mouser.
  10. Is the NVMFS5C612NLAFT1G available for purchase?
    Yes, it is available for purchase, although it may be out of stock and available on backorder at some distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.36mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$3.92
146

Please send RFQ , we will respond immediately.

Same Series
NVMFS5C612NLAFT3G
NVMFS5C612NLAFT3G
MOSFET N-CH 60V 38A/250A 5DFN
NVMFS5C612NLWFAFT3G
NVMFS5C612NLWFAFT3G
MOSFET N-CH 60V 38A/250A 5DFN
NVMFS5C612NLWFAFT1G
NVMFS5C612NLWFAFT1G
MOSFET N-CH 60V 38A/250A 5DFN
NVMFS5C612NLT3G
NVMFS5C612NLT3G
MOSFET N-CH 60V 36A/235A 5DFN
NVMFS5C612NLWFT3G
NVMFS5C612NLWFT3G
MOSFET N-CH 60V 36A/235A 5DFN
NVMFS5C612NLT1G
NVMFS5C612NLT1G
MOSFET N-CH 60V 36A/235A 5DFN
NVMFS5C612NLWFT1G
NVMFS5C612NLWFT1G
MOSFET N-CH 60V 36A/235A 5DFN

Similar Products

Part Number NVMFS5C612NLAFT1G NVMFS5C682NLAFT1G NVMFS5C612NLAFT3G NVMFS5C612NLWFT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Not For New Designs Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 250A (Tc) 8.8A (Ta), 25A (Tc) 38A (Ta), 250A (Tc) 36A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.36mOhm @ 50A, 10V 21mOhm @ 10A, 10V 1.36mOhm @ 50A, 10V 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 16µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 5 nC @ 10 V 91 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6660 pF @ 25 V 410 pF @ 25 V 6660 pF @ 25 V 6660 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 3.8W (Ta), 167W (Tc) 3.5W (Ta), 28W (Tc) 3.8W (Ta), 167W (Tc) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC