NTR4502PT1
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onsemi NTR4502PT1

Manufacturer No:
NTR4502PT1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.13A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4502PT1 is a single P-Channel power MOSFET produced by onsemi. This device is designed using leading planar technology, which offers low gate charge and fast switching capabilities. It is packaged in a SOT-23 surface mount format, providing a small footprint of 3 x 3 mm. The NTR4502PT1 is Pb-free and RoHS compliant, making it suitable for a wide range of applications. The NV prefix variant, NVTR4502PT1, is AEC-Q101 qualified and PPAP capable, catering to automotive and other demanding applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-30V
Gate-to-Source VoltageVGS±20V
Drain Current (Pulsed, t < 10 s, TA = 25°C)ID-1.95A
Continuous Drain Current (Steady State, TA = 25°C)ID-1.13A
Power Dissipation (Pulsed, t < 10 s)PD1.25W
Power Dissipation (Steady State)PD0.4W
Operating Junction and Storage TemperatureTJ, TSTG-55 to 150°C
Source Current (Body Diode)IS-1.25A
Lead Temperature for Soldering PurposesTL260°C
Drain-to-Source On ResistanceRDS(on)155 mΩ @ VGS = -10 V
Gate Threshold VoltageVGS(TH)-1.0 to -3.0V

Key Features

  • Leading planar technology for low gate charge and fast switching.
  • Low RDS(on) for low conduction losses.
  • SOT-23 surface mount package for a small footprint (3 x 3 mm).
  • Pb-free and RoHS compliant.
  • NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

Applications

  • DC to DC conversion.
  • Load/power switch for portables and computing.
  • Motherboard, notebooks, camcorders, digital cameras, etc.
  • Battery charging circuits.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4502PT1?
    The maximum drain-to-source voltage is -30 V.
  2. What is the maximum gate-to-source voltage of the NTR4502PT1?
    The maximum gate-to-source voltage is ±20 V.
  3. What is the continuous drain current at 25°C for the NTR4502PT1?
    The continuous drain current at 25°C is -1.13 A.
  4. What is the power dissipation of the NTR4502PT1 in steady state?
    The power dissipation in steady state is 0.4 W.
  5. What is the operating junction and storage temperature range for the NTR4502PT1?
    The operating junction and storage temperature range is -55 to 150°C.
  6. Is the NTR4502PT1 Pb-free and RoHS compliant?
    Yes, the NTR4502PT1 is Pb-free and RoHS compliant.
  7. What are the typical applications of the NTR4502PT1?
    The typical applications include DC to DC conversion, load/power switch for portables and computing, motherboard, notebooks, camcorders, digital cameras, and battery charging circuits.
  8. What is the significance of the NV prefix in the NVTR4502PT1?
    The NV prefix indicates that the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  9. What is the package type of the NTR4502PT1?
    The package type is SOT-23.
  10. What is the typical drain-to-source on resistance of the NTR4502PT1?
    The typical drain-to-source on resistance is 155 mΩ at VGS = -10 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):400mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NVTR4502PT1G
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NTR4502PT3
NTR4502PT3
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NTR4502PT3G
NTR4502PT3G
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Similar Products

Part Number NTR4502PT1 NTR4502PT1G NTR4502PT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.13A (Ta) 1.13A (Ta) 1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 15 V 200 pF @ 15 V 200 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 400mW (Tj) 400mW (Tj) 400mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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