NTR4502PT3
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onsemi NTR4502PT3

Manufacturer No:
NTR4502PT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.13A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4502PT3 is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This component is housed in a SOT-23-3 (TO-236) package, making it suitable for surface mount technology. The NTR4502PT3 is characterized by its low gate charge and fast switching capabilities, thanks to onsemi's leading planar technology. Although this product is currently listed as obsolete, it remains a valuable component for various electronic projects due to its robust specifications and reliability.

Key Specifications

Parameter Symbol Value Unit
FET Type - P-Channel -
Drain to Source Voltage (Vdss) Vdss 30 V V
Continuous Drain Current (Id) @ 25°C Id 1.13 A (Ta) A
Gate to Source Voltage (Vgs) Vgs ±20 V V
Gate Threshold Voltage (Vgs(th)) @ Id Vgs(th) -1.0 to -3.0 V V
Drain to Source On Resistance (Rds(on)) @ Vgs, Id Rds(on) 155 to 200 mΩ @ -10 V, -1.95 A
Gate Charge (Qg) @ Vgs Qg 10 nC @ 10 V nC
Input Capacitance (Ciss) @ Vds Ciss 200 pF @ 15 V pF
Power Dissipation (Max) Pd 400 mW (Tj) mW
Operating Temperature Tj -55°C to 150°C °C
Package/Case - SOT-23-3 (TO-236) -

Key Features

  • Leading Planar Technology: Ensures low gate charge and fast switching capabilities.
  • Low RDS(ON): Minimizes conduction losses, enhancing overall efficiency.
  • Compact SOT-23 Surface Mount Package: Ideal for applications requiring a small footprint (3 x 3 mm).
  • Pb-Free and RoHS Compliant: Meets environmental and regulatory standards.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other demanding applications.

Applications

  • DC to DC Conversion: Used in power conversion circuits for efficient energy transfer.
  • Load/Power Switch for Portables and Computing: Ideal for devices such as notebooks, camcorders, and digital cameras.
  • Motherboard and Battery Charging Circuits: Utilized in various motherboard designs and battery charging applications.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NTR4502PT3?

    The maximum drain to source voltage (Vdss) is 30 V.

  2. What is the continuous drain current (Id) at 25°C for the NTR4502PT3?

    The continuous drain current (Id) at 25°C is 1.13 A (Ta).

  3. What is the gate threshold voltage (Vgs(th)) range for the NTR4502PT3?

    The gate threshold voltage (Vgs(th)) range is -1.0 to -3.0 V.

  4. What is the maximum power dissipation (Pd) for the NTR4502PT3?

    The maximum power dissipation (Pd) is 400 mW (Tj).

  5. What is the operating temperature range for the NTR4502PT3?

    The operating temperature range is -55°C to 150°C (Tj).

  6. Is the NTR4502PT3 Pb-Free and RoHS Compliant?

    Yes, the NTR4502PT3 is Pb-Free and RoHS Compliant.

  7. What package type does the NTR4502PT3 use?

    The NTR4502PT3 uses the SOT-23-3 (TO-236) package.

  8. What are some common applications of the NTR4502PT3?

    Common applications include DC to DC conversion, load/power switch for portables and computing, motherboard, and battery charging circuits.

  9. Is the NTR4502PT3 AEC-Q101 Qualified?

    Yes, the NTR4502PT3 is AEC-Q101 Qualified and PPAP Capable.

  10. What is the status of the NTR4502PT3 in terms of production?

    The NTR4502PT3 is currently listed as obsolete and no longer manufactured.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):400mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NVTR4502PT1G
NVTR4502PT1G
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT1
NTR4502PT1
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3
NTR4502PT3
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3G
NTR4502PT3G
MOSFET P-CH 30V 1.13A SOT23-3

Similar Products

Part Number NTR4502PT3 NTR4502PT3G NTR4502PT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.13A (Ta) 1.13A (Ta) 1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 15 V 200 pF @ 15 V 200 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 400mW (Tj) 400mW (Tj) 400mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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