NTR4502PT3G
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onsemi NTR4502PT3G

Manufacturer No:
NTR4502PT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.13A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4502PT3G, produced by onsemi, is a P-Channel MOSFET designed for high-performance applications. This device utilizes leading planar technology to achieve low gate charge and fast switching times, making it ideal for various power management and switching applications. The NTR4502PT3G is packaged in a compact SOT-23 footprint, which is suitable for space-constrained designs. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -30 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Pulsed, t < 10 s, TA = 25°C) ID -1.95 A
Drain Current (Continuous, Steady State, TA = 25°C) ID -1.13 A
Power Dissipation (Pulsed, t < 10 s) PD 1.25 W
Power Dissipation (Continuous, Steady State) PD 0.4 W
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C
Source Current (Body Diode) IS -1.25 A
Lead Temperature for Soldering Purposes TL 260 °C
Drain-to-Source On Resistance (VGS = -10 V, ID = -1.95 A) RDS(on) 155 mΩ
Gate Threshold Voltage (VGS = VDS, ID = -250 μA) VGS(TH) -1.0 to -3.0 V

Key Features

  • Leading planar technology for low gate charge and fast switching times.
  • Low RDS(on) for low conduction losses.
  • Compact SOT-23 surface mount package for small footprint (3 x 3 mm).
  • NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.

Applications

  • DC to DC conversion.
  • Load/power switch for portables and computing devices.
  • Motherboards, notebooks, camcorders, digital cameras, etc.
  • Battery charging circuits.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4502PT3G?

    The maximum drain-to-source voltage (VDSS) is -30 V.

  2. What is the gate-to-source voltage range for this MOSFET?

    The gate-to-source voltage (VGS) range is ±20 V.

  3. What is the maximum pulsed drain current at 25°C?

    The maximum pulsed drain current (ID) at 25°C is -1.95 A.

  4. What is the continuous steady-state drain current at 25°C?

    The continuous steady-state drain current (ID) at 25°C is -1.13 A.

  5. Is the NTR4502PT3G Pb-free and RoHS compliant?
  6. What are the typical applications of the NTR4502PT3G?

    The NTR4502PT3G is typically used in DC to DC conversion, load/power switching for portables and computing devices, motherboards, notebooks, camcorders, digital cameras, and battery charging circuits.

  7. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range (TJ, TSTG) is -55 to 150°C.

  8. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes (TL) is 260°C.

  9. What is the typical drain-to-source on resistance?

    The typical drain-to-source on resistance (RDS(on)) at VGS = -10 V and ID = -1.95 A is 155 mΩ.

  10. Is the NTR4502PT3G AEC-Q101 qualified?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):400mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NVTR4502PT1G
NVTR4502PT1G
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT1
NTR4502PT1
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3
NTR4502PT3
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3G
NTR4502PT3G
MOSFET P-CH 30V 1.13A SOT23-3

Similar Products

Part Number NTR4502PT3G NTR4502PT1G NTR4502PT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.13A (Ta) 1.13A (Ta) 1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 15 V 200 pF @ 15 V 200 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 400mW (Tj) 400mW (Tj) 400mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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