Overview
The NVTR4502PT1G is a P-Channel MOSFET produced by onsemi, designed for high-performance applications. This device utilizes leading planar technology to achieve low gate charge and fast switching times. It is packaged in a small SOT-23 footprint, making it ideal for space-constrained designs. The NVTR4502PT1G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | -30 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Drain Current (Pulsed, t < 10 s, TA = 25°C) | ID | -1.95 | A |
Continuous Drain Current (Steady State, TA = 25°C) | ID | -1.13 | A |
Power Dissipation (Pulsed, t < 10 s) | PD | 1.25 | W |
Power Dissipation (Steady State) | PD | 0.4 | W |
Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
Gate Threshold Voltage | VGS(TH) | -1.0 to -3.0 | V |
Drain-to-Source On Resistance | RDS(on) | 155 to 200 mΩ @ VGS = -10 V | mΩ |
Input Capacitance | CISS | 200 | pF |
Output Capacitance | COSS | 80 | pF |
Reverse Transfer Capacitance | CRSS | 50 | pF |
Key Features
- Leading planar technology for low gate charge and fast switching times.
- Low RDS(on) for low conduction losses.
- SOT-23 surface mount package for small footprint (3 x 3 mm).
- NV prefix for automotive and other applications requiring unique site and control change requirements.
- AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
Applications
- DC to DC conversion.
- Load/power switch for portables and computing devices.
- Motherboards, notebooks, camcorders, and digital cameras.
- Battery charging circuits.
Q & A
- What is the maximum drain-to-source voltage of the NVTR4502PT1G?
The maximum drain-to-source voltage is -30 V.
- What is the gate threshold voltage range of the NVTR4502PT1G?
The gate threshold voltage range is -1.0 to -3.0 V.
- What is the typical drain-to-source on resistance of the NVTR4502PT1G?
The typical drain-to-source on resistance is 155 to 200 mΩ at VGS = -10 V.
- Is the NVTR4502PT1G AEC-Q101 qualified?
Yes, the NVTR4502PT1G is AEC-Q101 qualified.
- What is the operating junction and storage temperature range of the NVTR4502PT1G?
The operating junction and storage temperature range is -55 to 150°C.
- What are the typical applications of the NVTR4502PT1G?
Typical applications include DC to DC conversion, load/power switch for portables and computing devices, motherboards, notebooks, camcorders, digital cameras, and battery charging circuits.
- Is the NVTR4502PT1G Pb-free and RoHS compliant?
Yes, the NVTR4502PT1G is Pb-free and RoHS compliant.
- What is the package type of the NVTR4502PT1G?
The package type is SOT-23.
- What is the maximum continuous drain current of the NVTR4502PT1G at 25°C?
The maximum continuous drain current is -1.13 A at 25°C.
- What is the maximum power dissipation of the NVTR4502PT1G in steady state?
The maximum power dissipation in steady state is 0.4 W.