NVTR4502PT1G
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onsemi NVTR4502PT1G

Manufacturer No:
NVTR4502PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.13A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTR4502PT1G is a P-Channel MOSFET produced by onsemi, designed for high-performance applications. This device utilizes leading planar technology to achieve low gate charge and fast switching times. It is packaged in a small SOT-23 footprint, making it ideal for space-constrained designs. The NVTR4502PT1G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -30 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Pulsed, t < 10 s, TA = 25°C) ID -1.95 A
Continuous Drain Current (Steady State, TA = 25°C) ID -1.13 A
Power Dissipation (Pulsed, t < 10 s) PD 1.25 W
Power Dissipation (Steady State) PD 0.4 W
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C
Gate Threshold Voltage VGS(TH) -1.0 to -3.0 V
Drain-to-Source On Resistance RDS(on) 155 to 200 mΩ @ VGS = -10 V
Input Capacitance CISS 200 pF
Output Capacitance COSS 80 pF
Reverse Transfer Capacitance CRSS 50 pF

Key Features

  • Leading planar technology for low gate charge and fast switching times.
  • Low RDS(on) for low conduction losses.
  • SOT-23 surface mount package for small footprint (3 x 3 mm).
  • NV prefix for automotive and other applications requiring unique site and control change requirements.
  • AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.

Applications

  • DC to DC conversion.
  • Load/power switch for portables and computing devices.
  • Motherboards, notebooks, camcorders, and digital cameras.
  • Battery charging circuits.

Q & A

  1. What is the maximum drain-to-source voltage of the NVTR4502PT1G?

    The maximum drain-to-source voltage is -30 V.

  2. What is the gate threshold voltage range of the NVTR4502PT1G?

    The gate threshold voltage range is -1.0 to -3.0 V.

  3. What is the typical drain-to-source on resistance of the NVTR4502PT1G?

    The typical drain-to-source on resistance is 155 to 200 mΩ at VGS = -10 V.

  4. Is the NVTR4502PT1G AEC-Q101 qualified?

    Yes, the NVTR4502PT1G is AEC-Q101 qualified.

  5. What is the operating junction and storage temperature range of the NVTR4502PT1G?

    The operating junction and storage temperature range is -55 to 150°C.

  6. What are the typical applications of the NVTR4502PT1G?

    Typical applications include DC to DC conversion, load/power switch for portables and computing devices, motherboards, notebooks, camcorders, digital cameras, and battery charging circuits.

  7. Is the NVTR4502PT1G Pb-free and RoHS compliant?

    Yes, the NVTR4502PT1G is Pb-free and RoHS compliant.

  8. What is the package type of the NVTR4502PT1G?

    The package type is SOT-23.

  9. What is the maximum continuous drain current of the NVTR4502PT1G at 25°C?

    The maximum continuous drain current is -1.13 A at 25°C.

  10. What is the maximum power dissipation of the NVTR4502PT1G in steady state?

    The maximum power dissipation in steady state is 0.4 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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