NTR4502PT1G
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onsemi NTR4502PT1G

Manufacturer No:
NTR4502PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.13A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4502PT1G is a single P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low gate charge and fast switching. It features a compact SOT-23 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding applications. It is also Pb-free and RoHS compliant, aligning with environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -30 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Continuous) ID -1.95 A (at 25°C), -1.13 A (steady state at 25°C) A
Power Dissipation (Continuous) PD 1.25 W (pulsed), 0.4 W (steady state) W
Drain-to-Source On Resistance RDS(on) 155 mΩ @ -10 V, 240 mΩ @ -4.5 V
Gate Threshold Voltage VGS(TH) -1.0 to -3.0 V V
Total Gate Charge QG(TOT) 6 to 10 nC nC
Operating Junction Temperature TJ -55 to 150 °C °C
Package Type SOT-23
Mounting Type Surface Mount

Key Features

  • Leading planar technology for low gate charge and fast switching.
  • Low RDS(on) for low conduction losses.
  • Compact SOT-23 surface mount package for small footprint (3 x 3 mm).
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.
  • High operating junction temperature range (-55°C to 150°C).

Applications

  • DC to DC conversion.
  • Load/power switch for portables and computing devices.
  • Motherboards, notebooks, camcorders, digital cameras, etc.
  • Battery charging circuits.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4502PT1G MOSFET?

    The maximum drain-to-source voltage is -30 V.

  2. What is the continuous drain current rating of the NTR4502PT1G at 25°C?

    The continuous drain current rating is -1.95 A at 25°C.

  3. What is the typical drain-to-source on resistance of the NTR4502PT1G?

    The typical drain-to-source on resistance is 155 mΩ at VGS = -10 V and 240 mΩ at VGS = -4.5 V.

  4. What is the gate threshold voltage range of the NTR4502PT1G?

    The gate threshold voltage range is -1.0 to -3.0 V.

  5. Is the NTR4502PT1G AEC-Q101 qualified?

    Yes, the NTR4502PT1G is AEC-Q101 qualified and PPAP capable.

  6. What is the operating junction temperature range of the NTR4502PT1G?

    The operating junction temperature range is -55°C to 150°C.

  7. What package type does the NTR4502PT1G use?

    The NTR4502PT1G uses a SOT-23 package.

  8. Is the NTR4502PT1G Pb-free and RoHS compliant?

    Yes, the NTR4502PT1G is Pb-free and RoHS compliant.

  9. What are some common applications of the NTR4502PT1G?

    Common applications include DC to DC conversion, load/power switches, motherboards, notebooks, camcorders, digital cameras, and battery charging circuits.

  10. What is the maximum power dissipation of the NTR4502PT1G?

    The maximum power dissipation is 1.25 W (pulsed) and 0.4 W (steady state).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):400mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NVTR4502PT1G
NVTR4502PT1G
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT1
NTR4502PT1
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3
NTR4502PT3
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3G
NTR4502PT3G
MOSFET P-CH 30V 1.13A SOT23-3

Similar Products

Part Number NTR4502PT1G NTR4502PT3G NTR4502PT1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.13A (Ta) 1.13A (Ta) 1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 15 V 200 pF @ 15 V 200 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 400mW (Tj) 400mW (Tj) 400mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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