NTR4502PT1G
  • Share:

onsemi NTR4502PT1G

Manufacturer No:
NTR4502PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 1.13A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4502PT1G is a single P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low gate charge and fast switching. It features a compact SOT-23 package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding applications. It is also Pb-free and RoHS compliant, aligning with environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -30 V
Gate-to-Source Voltage VGS ±20 V
Drain Current (Continuous) ID -1.95 A (at 25°C), -1.13 A (steady state at 25°C) A
Power Dissipation (Continuous) PD 1.25 W (pulsed), 0.4 W (steady state) W
Drain-to-Source On Resistance RDS(on) 155 mΩ @ -10 V, 240 mΩ @ -4.5 V
Gate Threshold Voltage VGS(TH) -1.0 to -3.0 V V
Total Gate Charge QG(TOT) 6 to 10 nC nC
Operating Junction Temperature TJ -55 to 150 °C °C
Package Type SOT-23
Mounting Type Surface Mount

Key Features

  • Leading planar technology for low gate charge and fast switching.
  • Low RDS(on) for low conduction losses.
  • Compact SOT-23 surface mount package for small footprint (3 x 3 mm).
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.
  • High operating junction temperature range (-55°C to 150°C).

Applications

  • DC to DC conversion.
  • Load/power switch for portables and computing devices.
  • Motherboards, notebooks, camcorders, digital cameras, etc.
  • Battery charging circuits.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4502PT1G MOSFET?

    The maximum drain-to-source voltage is -30 V.

  2. What is the continuous drain current rating of the NTR4502PT1G at 25°C?

    The continuous drain current rating is -1.95 A at 25°C.

  3. What is the typical drain-to-source on resistance of the NTR4502PT1G?

    The typical drain-to-source on resistance is 155 mΩ at VGS = -10 V and 240 mΩ at VGS = -4.5 V.

  4. What is the gate threshold voltage range of the NTR4502PT1G?

    The gate threshold voltage range is -1.0 to -3.0 V.

  5. Is the NTR4502PT1G AEC-Q101 qualified?

    Yes, the NTR4502PT1G is AEC-Q101 qualified and PPAP capable.

  6. What is the operating junction temperature range of the NTR4502PT1G?

    The operating junction temperature range is -55°C to 150°C.

  7. What package type does the NTR4502PT1G use?

    The NTR4502PT1G uses a SOT-23 package.

  8. Is the NTR4502PT1G Pb-free and RoHS compliant?

    Yes, the NTR4502PT1G is Pb-free and RoHS compliant.

  9. What are some common applications of the NTR4502PT1G?

    Common applications include DC to DC conversion, load/power switches, motherboards, notebooks, camcorders, digital cameras, and battery charging circuits.

  10. What is the maximum power dissipation of the NTR4502PT1G?

    The maximum power dissipation is 1.25 W (pulsed) and 0.4 W (steady state).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):400mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.52
1,137

Please send RFQ , we will respond immediately.

Same Series
NVTR4502PT1G
NVTR4502PT1G
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT1
NTR4502PT1
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3
NTR4502PT3
MOSFET P-CH 30V 1.13A SOT23-3
NTR4502PT3G
NTR4502PT3G
MOSFET P-CH 30V 1.13A SOT23-3

Similar Products

Part Number NTR4502PT1G NTR4502PT3G NTR4502PT1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.13A (Ta) 1.13A (Ta) 1.13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V 200mOhm @ 1.95A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 15 V 200 pF @ 15 V 200 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 400mW (Tj) 400mW (Tj) 400mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD