Overview
The NTMFS4C027NT1G is a power MOSFET from ON Semiconductor, designed for high-performance applications. This single N-channel MOSFET is packaged in an SO-8FL case, making it suitable for compact and efficient designs. The device is characterized by its low on-resistance (RDS(on)), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current | IDmax | 80 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +150 | °C |
| Drain-to-Source On Resistance | RDS(on) | 4.8 mΩ @ VGS = 10 V, ID = 18 A | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 to 2.1 | V |
| Total Gate Charge | QG(TOT) | 18.2 nC @ VGS = 10 V, VDS = 15 V; ID = 30 A | nC |
| Turn-On Delay Time | td(ON) | 7.0 to 9.0 ns @ VGS = 10 V, VDS = 15 V, ID = 15 A | ns |
| Turn-Off Delay Time | td(OFF) | 15 to 19 ns @ VGS = 10 V, VDS = 15 V, ID = 15 A | ns |
| Forward Diode Voltage | VSD | 0.79 to 1.1 V @ IS = 10 A, TJ = 25°C | V |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- Compact SO-8FL package for efficient design
Applications
- CPU power delivery
- DC-DC converters
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMFS4C027NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current (IDmax) rating of this MOSFET?
The continuous drain current (IDmax) is rated at 80 A.
- What are the operating junction and storage temperature ranges for this device?
The operating junction and storage temperature ranges are from −55°C to +150°C.
- What is the typical on-resistance (RDS(on)) of the NTMFS4C027NT1G?
The typical on-resistance (RDS(on)) is 4.8 mΩ at VGS = 10 V and ID = 18 A.
- Is the NTMFS4C027NT1G RoHS compliant?
- What are some common applications for this MOSFET?
- What is the gate threshold voltage (VGS(TH)) range for this device?
The gate threshold voltage (VGS(TH)) range is from 1.3 V to 2.1 V.
- What is the total gate charge (QG(TOT)) at VGS = 10 V and ID = 30 A?
The total gate charge (QG(TOT)) is 18.2 nC at VGS = 10 V, VDS = 15 V, and ID = 30 A.
- What are the turn-on and turn-off delay times for this MOSFET?
The turn-on delay time (td(ON)) is 7.0 to 9.0 ns, and the turn-off delay time (td(OFF)) is 15 to 19 ns at VGS = 10 V, VDS = 15 V, and ID = 15 A.
- What is the forward diode voltage (VSD) at IS = 10 A and TJ = 25°C?
The forward diode voltage (VSD) is 0.79 to 1.1 V at IS = 10 A and TJ = 25°C.
