NTMFS4C024NT1G
  • Share:

onsemi NTMFS4C024NT1G

Manufacturer No:
NTMFS4C024NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 21.7A/78A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C024NT1G is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer superior switching characteristics and low on-resistance, making it suitable for a wide range of power management applications. The MOSFET features a 5DFN package, which provides excellent thermal performance and a compact footprint, ideal for space-constrained designs.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Continuous Drain Current (Id) @ 25°C21.7A
Pulse Drain Current (Id) @ 25°C78A
Operating Temperature (TJ)-55°C ~ 150°C
Package5DFN

Key Features

  • Low On-Resistance: Ensures minimal power loss and high efficiency in switching applications.
  • High Current Capability: Supports continuous drain currents up to 21.7A and pulse currents up to 78A.
  • Compact 5DFN Package: Provides excellent thermal performance and a small footprint, ideal for space-constrained designs.
  • Wide Operating Temperature Range: Operates reliably from -55°C to 150°C, making it suitable for diverse environmental conditions.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: Used in motor drive circuits and other high-current applications.
  • Automotive Systems: Applicable in automotive electronics such as battery management and power distribution.
  • Industrial Control: Employed in industrial control systems, including power amplifiers and switching circuits.

Q & A

  1. What is the drain to source voltage (Vdss) of the NTMFS4C024NT1G?
    The drain to source voltage (Vdss) is 30V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 21.7A.
  3. What is the pulse drain current (Id) at 25°C?
    The pulse drain current (Id) at 25°C is 78A.
  4. What is the operating temperature range of the NTMFS4C024NT1G?
    The operating temperature range is from -55°C to 150°C.
  5. What package type does the NTMFS4C024NT1G come in?
    The NTMFS4C024NT1G comes in a 5DFN package.
  6. What are some common applications of the NTMFS4C024NT1G?
    Common applications include power management, motor control, automotive systems, and industrial control.
  7. What is the technology used in the NTMFS4C024NT1G?
    The technology used is MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
  8. Is the NTMFS4C024NT1G suitable for high-current applications?
    Yes, it is suitable for high-current applications due to its high current capability.
  9. Where can I find detailed specifications for the NTMFS4C024NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Heisener.
  10. What are the benefits of the 5DFN package?
    The 5DFN package provides excellent thermal performance and a compact footprint, making it ideal for space-constrained designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21.7A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1972 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.57W (Ta), 33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$1.27
167

Please send RFQ , we will respond immediately.

Same Series
NTMFS4C024NT3G
NTMFS4C024NT3G
MOSFET N-CH 30V 21.7A/78A 5DFN

Similar Products

Part Number NTMFS4C024NT1G NTMFS4C029NT1G NTMFS4C025NT1G NTMFS4C028NT1G NTMFS4C027NT1G NTMFS4C024NT3G NTMFS4C020NT1G NTMFS4C022NT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 21.7A (Ta), 78A (Tc) 15A (Ta), 46A (Tc) 20A (Ta), 69A (Tc) 16.4A (Ta), 52A (Tc) 16.4A (Ta), 52A (Tc) 21.7A (Ta), 78A (Tc) 47A (Ta), 303A (Tc) 30A (Ta), 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V 5.88mOhm @ 30A, 10V 3.41mOhm @ 30A, 10V 4.73mOhm @ 30A, 10V 4.8mOhm @ 18A, 10V 2.8mOhm @ 30A, 10V 0.7mOhm @ 30A, 10V 1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 18.6 nC @ 10 V 26 nC @ 10 V 22.2 nC @ 10 V 18.2 nC @ 10 V 30 nC @ 10 V 139 nC @ 10 V 45.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1972 pF @ 15 V 987 pF @ 15 V 1683 pF @ 15 V 1252 pF @ 15 V 1670 pF @ 15 V 1972 pF @ 15 V 10144 pF @ 15 V 3071 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.57W (Ta), 33W (Tc) 2.49W (Ta), 23.6W (Tc) 2.55W (Ta), 30.5W (Tc) 2.51W (Ta), 25.5W (Tc) 2.51W (Ta), 25.5W (Tc) 2.57W (Ta), 33W (Tc) 3.2W (Ta), 134W (Tc) 3.1W (Ta), 64W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5