Overview
The NTMFS4C020NT1G is a single N-Channel, logic-level MOSFET produced by onsemi. This device is packaged in a SO-8FL (DFN5 5x6, 1.27P) case, making it suitable for compact design applications. The MOSFET is optimized for 4.5V gate drive and is known for its low RDS(on) and low QG and capacitance, which minimize conduction and driver losses. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (RJC, Notes 1, 3) | ID | 370 A (TC = 25°C) | A |
| Continuous Drain Current (RJA, Notes 1, 2, 3) | ID | 57 A (TA = 25°C) | A |
| Power Dissipation (RJC, Notes 1, 3) | PD | 161 W (TC = 25°C) | W |
| Power Dissipation (RJA, Notes 1, 2, 3) | PD | 3.84 W (TA = 25°C) | W |
| Pulsed Drain Current | IDM | 900 A (tp = 10 μs, TA = 25°C) | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 150 | °C |
| Source Current (Body Diode) | IS | 110 A | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 862 mJ (IL(pk) = 35 A) | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Drain-to-Source On Resistance (RDS(on)) | RDS(on) | 0.67 mΩ @ VGS = 10 V, ID = 30 A | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 to 2.2 V | V |
Key Features
- Small Footprint: The SO-8FL package measures 5x6 mm, ideal for compact designs.
- Low RDS(on): Minimizes conduction losses with values as low as 0.67 mΩ at VGS = 10 V and ID = 30 A.
- Low QG and Capacitance: Reduces driver losses.
- Optimized for 4.5V Gate Drive: Suitable for logic-level applications.
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The NTMFS4C020NT1G MOSFET is suitable for a variety of applications, including:
- Power Management Systems: Due to its low RDS(on) and high current handling capabilities.
- DC-DC Converters: Ideal for high-efficiency switching applications.
- Motor Control: Used in motor drive circuits for efficient power management.
- Automotive Systems: Suitable for various automotive applications requiring high reliability and efficiency.
- Industrial Power Supplies: For high-power industrial equipment.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMFS4C020NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current rating at TC = 25°C?
The continuous drain current rating at TC = 25°C is 370 A.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 30 A?
The typical on-resistance (RDS(on)) is 0.67 mΩ at VGS = 10 V and ID = 30 A.
- Is the NTMFS4C020NT1G RoHS compliant?
Yes, the NTMFS4C020NT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 150°C.
- What is the maximum power dissipation at TA = 25°C?
The maximum power dissipation at TA = 25°C is 3.84 W.
- What is the typical gate threshold voltage (VGS(TH))?
The typical gate threshold voltage (VGS(TH)) is between 1.3 to 2.2 V.
- What is the single pulse drain-to-source avalanche energy (EAS)?
The single pulse drain-to-source avalanche energy (EAS) is 862 mJ (IL(pk) = 35 A).
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- Is the NTMFS4C020NT1G suitable for high-frequency switching applications?
Yes, it is suitable due to its low QG and capacitance, and optimized for 4.5V gate drive.
