Overview
The NTMFS4C022NT1G is a power MOSFET produced by onsemi, designed for high-performance applications. This single N-channel MOSFET is packaged in a compact SO-8FL footprint, making it ideal for space-constrained designs. It features low on-resistance and minimal conduction losses, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 136 | A |
| Continuous Drain Current (TA = 25°C) | ID | 30 | A |
| Power Dissipation (TC = 25°C) | PD | 64 | W |
| Drain-to-Source On Resistance (VGS = 10 V) | RDS(on) | 1.7 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| Forward Diode Voltage (VGS = 0 V, IS = 10 A) | VSD | 0.75 - 1.1 | V |
Key Features
- Compact Design: Small footprint (5x6 mm) in SO-8FL package, ideal for space-constrained applications.
- Low On-Resistance: Minimizes conduction losses with an RDS(on) of 1.7 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses.
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The NTMFS4C022NT1G is suitable for various high-power applications, including but not limited to:
- Power management systems
- Switching power supplies
- Motor control and drive systems
- High-frequency switching applications
- Automotive and industrial power systems
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C022NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V. - What is the continuous drain current at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 136 A. - What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.3 to 2.2 V. - Is the NTMFS4C022NT1G RoHS compliant?
Yes, the NTMFS4C022NT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 1.7 mΩ at VGS = 10 V. - What is the forward diode voltage range?
The forward diode voltage (VSD) range is 0.75 to 1.1 V at VGS = 0 V and IS = 10 A. - What are the typical operating temperatures for this MOSFET?
The typical operating temperatures are from -55°C to 150°C. - What is the package type of the NTMFS4C022NT1G?
The package type is SO-8FL. - What are some common applications for this MOSFET?
Common applications include power management systems, switching power supplies, motor control and drive systems, high-frequency switching applications, and automotive and industrial power systems. - Where can I find detailed specifications and datasheets for the NTMFS4C022NT1G?
Detailed specifications and datasheets can be found on the onsemi website and other electronic component distributors like Mouser and Heisener.
