ATP112-TL-H
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onsemi ATP112-TL-H

Manufacturer No:
ATP112-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 25A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ATP112-TL-H is a P-Channel Power MOSFET produced by onsemi. Although this component is currently obsolete and no longer manufactured, it was designed to offer high performance in various power management applications. The MOSFET was known for its low on-resistance, making it suitable for efficient power handling.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
VGS (Gate-Source Voltage)±20 V
RDS(ON) (On-Resistance)Low on-resistance (specific value not available due to obsolescence)
ID (Continuous Drain Current)Specific value not available due to obsolescence
PackageTO-220

Key Features

  • Low on-resistance for efficient power handling
  • P-Channel configuration for specific application needs
  • High voltage rating (40V) for robust performance
  • Suitable for motor driver applications and other power management scenarios

Applications

The ATP112-TL-H was primarily used in motor driver applications, power management circuits, and other systems requiring high efficiency and low on-resistance. Its P-Channel configuration made it versatile for various power switching and control tasks.

Q & A

  1. What is the ATP112-TL-H?

    The ATP112-TL-H is a P-Channel Power MOSFET produced by onsemi.

  2. Is the ATP112-TL-H still in production?

    No, the ATP112-TL-H is obsolete and no longer manufactured.

  3. What are the key features of the ATP112-TL-H?

    It features low on-resistance, a high voltage rating of 40V, and a P-Channel configuration.

  4. What are the typical applications for the ATP112-TL-H?

    Motor driver applications, power management circuits, and other power switching tasks.

  5. What is the package type of the ATP112-TL-H?

    The package type is TO-220.

  6. What are the available substitutes for the ATP112-TL-H?

    Available substitutes include the ATP113-TL-H.

  7. Why is the ATP112-TL-H no longer manufactured?

    The specific reasons for its obsolescence are not detailed, but it is no longer in production.

  8. Where can I find detailed specifications for the ATP112-TL-H?

    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.

  9. What is the significance of low on-resistance in a MOSFET?

    Low on-resistance reduces power losses and improves efficiency in power handling applications.

  10. Can I still purchase the ATP112-TL-H?

    No, it is obsolete and not available for purchase. You should consider using available substitutes.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:43mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:33.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:ATPAK (2 leads+tab)
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Similar Products

Part Number ATP112-TL-H ATP113-TL-H ATP212-TL-H ATP114-TL-H ATP102-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta) 35A (Ta) 35A (Ta) 55A (Ta) 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V 4V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 43mOhm @ 13A, 10V 29.5mOhm @ 18A, 10V 23mOhm @ 18A, 10V 16mOhm @ 28A, 10V 18.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - - - - -
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 10 V 55 nC @ 10 V 34.5 nC @ 10 V 92 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 20 V 2400 pF @ 20 V 1820 pF @ 20 V 4000 pF @ 20 V 1490 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 40W (Tc) 50W (Tc) 40W (Tc) 60W (Tc) 40W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK ATPAK ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab)

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