Overview
The ATP113-TL-H is a P-Channel Power MOSFET produced by onsemi, designed for general-purpose switching applications. This device is housed in a DPAK (Single Gauge) or ATPAK package and is Pb-Free and Halide Free. It offers a high current capability and low on-resistance, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | - | -60 | V |
| Gate-to-Source Voltage | VGSS | - | ±20 | V |
| Drain Current (DC) | ID | - | -35 | A |
| Drain Current (PW ≤10 μs) | IDP | PW ≤10 μs, duty cycle ≤1% | -105 | A |
| Allowable Power Dissipation | PD | Tc = 25°C | 50 | W |
| Channel Temperature | Tch | - | 150 | °C |
| Storage Temperature | Tstg | - | -55 to +150 | °C |
| Static Drain-to-Source On-State Resistance | RDS(on)1 | ID = -18 A, VGS = -10 V | 22.5 | mΩ |
| Input Capacitance | Ciss | VDS = -20 V, f = 1 MHz | 2400 | pF |
| Turn-ON Delay Time | td(on) | - | 15 | ns |
| Turn-OFF Delay Time | td(off) | - | 250 | ns |
Key Features
- Low On-Resistance: RDS(on)1 = 22.5 mΩ (typ) at ID = -18 A, VGS = -10 V.
- High Current Capability: Drain current up to -35 A (DC) and -105 A (PW ≤10 μs, duty cycle ≤1%).
- Protection Diode: Integrated protection diode for enhanced reliability.
- 4 V Drive: Suitable for low-voltage gate drive applications.
- Input Capacitance: Ciss = 2400 pF (typ) at VDS = -20 V, f = 1 MHz.
- Pb-Free and Halide Free: Compliant with environmental regulations.
Applications
The ATP113-TL-H is versatile and suitable for various general-purpose switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- Audio and power amplifiers
- High-frequency switching circuits
- Automotive and industrial control systems
Q & A
- What is the maximum drain-to-source voltage of the ATP113-TL-H? The maximum drain-to-source voltage is -60 V.
- What is the typical on-resistance of the ATP113-TL-H? The typical on-resistance is 22.5 mΩ at ID = -18 A, VGS = -10 V.
- What is the maximum drain current for the ATP113-TL-H? The maximum drain current is -35 A (DC) and -105 A (PW ≤10 μs, duty cycle ≤1%).
- Does the ATP113-TL-H have a built-in protection diode? Yes, it has an integrated protection diode.
- What is the input capacitance of the ATP113-TL-H? The input capacitance is 2400 pF (typ) at VDS = -20 V, f = 1 MHz.
- Is the ATP113-TL-H Pb-Free and Halide Free? Yes, it is Pb-Free and Halide Free.
- What is the maximum allowable power dissipation for the ATP113-TL-H? The maximum allowable power dissipation is 50 W at Tc = 25°C.
- What is the turn-on delay time of the ATP113-TL-H? The turn-on delay time is 15 ns.
- What is the turn-off delay time of the ATP113-TL-H? The turn-off delay time is 250 ns.
- What are some common applications for the ATP113-TL-H? It is used in power supplies, DC-DC converters, motor control, audio and power amplifiers, high-frequency switching circuits, and automotive and industrial control systems.
