ATP113-TL-H
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onsemi ATP113-TL-H

Manufacturer No:
ATP113-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 35A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ATP113-TL-H is a P-Channel Power MOSFET produced by onsemi, designed for general-purpose switching applications. This device is housed in a DPAK (Single Gauge) or ATPAK package and is Pb-Free and Halide Free. It offers a high current capability and low on-resistance, making it suitable for a wide range of applications.

Key Specifications

ParameterSymbolTest ConditionValueUnit
Drain-to-Source VoltageVDSS--60V
Gate-to-Source VoltageVGSS-±20V
Drain Current (DC)ID--35A
Drain Current (PW ≤10 μs)IDPPW ≤10 μs, duty cycle ≤1%-105A
Allowable Power DissipationPDTc = 25°C50W
Channel TemperatureTch-150°C
Storage TemperatureTstg--55 to +150°C
Static Drain-to-Source On-State ResistanceRDS(on)1ID = -18 A, VGS = -10 V22.5
Input CapacitanceCissVDS = -20 V, f = 1 MHz2400pF
Turn-ON Delay Timetd(on)-15ns
Turn-OFF Delay Timetd(off)-250ns

Key Features

  • Low On-Resistance: RDS(on)1 = 22.5 mΩ (typ) at ID = -18 A, VGS = -10 V.
  • High Current Capability: Drain current up to -35 A (DC) and -105 A (PW ≤10 μs, duty cycle ≤1%).
  • Protection Diode: Integrated protection diode for enhanced reliability.
  • 4 V Drive: Suitable for low-voltage gate drive applications.
  • Input Capacitance: Ciss = 2400 pF (typ) at VDS = -20 V, f = 1 MHz.
  • Pb-Free and Halide Free: Compliant with environmental regulations.

Applications

The ATP113-TL-H is versatile and suitable for various general-purpose switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Audio and power amplifiers
  • High-frequency switching circuits
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-to-source voltage of the ATP113-TL-H? The maximum drain-to-source voltage is -60 V.
  2. What is the typical on-resistance of the ATP113-TL-H? The typical on-resistance is 22.5 mΩ at ID = -18 A, VGS = -10 V.
  3. What is the maximum drain current for the ATP113-TL-H? The maximum drain current is -35 A (DC) and -105 A (PW ≤10 μs, duty cycle ≤1%).
  4. Does the ATP113-TL-H have a built-in protection diode? Yes, it has an integrated protection diode.
  5. What is the input capacitance of the ATP113-TL-H? The input capacitance is 2400 pF (typ) at VDS = -20 V, f = 1 MHz.
  6. Is the ATP113-TL-H Pb-Free and Halide Free? Yes, it is Pb-Free and Halide Free.
  7. What is the maximum allowable power dissipation for the ATP113-TL-H? The maximum allowable power dissipation is 50 W at Tc = 25°C.
  8. What is the turn-on delay time of the ATP113-TL-H? The turn-on delay time is 15 ns.
  9. What is the turn-off delay time of the ATP113-TL-H? The turn-off delay time is 250 ns.
  10. What are some common applications for the ATP113-TL-H? It is used in power supplies, DC-DC converters, motor control, audio and power amplifiers, high-frequency switching circuits, and automotive and industrial control systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:29.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:ATPAK (2 leads+tab)
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Similar Products

Part Number ATP113-TL-H ATP213-TL-H ATP613-TL-H ATP114-TL-H ATP103-TL-H ATP112-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel N-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 500 V 60 V 30 V 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 50A (Ta) 5.5A (Ta) 55A (Ta) 55A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 10V 4V, 10V 4.5V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 29.5mOhm @ 18A, 10V 16mOhm @ 25A, 10V 2Ohm @ 2.75A, 10V 16mOhm @ 28A, 10V 13mOhm @ 28A, 10V 43mOhm @ 13A, 10V
Vgs(th) (Max) @ Id - - - - - -
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 58 nC @ 10 V 13.8 nC @ 10 V 92 nC @ 10 V 47 nC @ 10 V 33.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 20 V 3150 pF @ 20 V 350 pF @ 30 V 4000 pF @ 20 V 2430 pF @ 10 V 1450 pF @ 20 V
FET Feature - - - - - -
Power Dissipation (Max) 50W (Tc) 50W (Tc) 70W (Tc) 60W (Tc) 50W (Tc) 40W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab)

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