ATP114-TL-H
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onsemi ATP114-TL-H

Manufacturer No:
ATP114-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 55A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ATP114-TL-H is a high-performance P-channel power MOSFET produced by onsemi. This component is designed for high-performance switching applications, such as switching power supplies, motor control systems, and inverters. It is capable of handling voltages up to -60V and currents up to -55A, making it suitable for a wide range of power management needs. The MOSFET is housed in a compact TO-252 package, which is ideal for space-constrained circuit designs.

Key Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS -- -60 V
Gate-to-Source Voltage VGSS -- ±20 V
Drain Current (DC) ID -- -55 A A
Pulsed Drain Current IDM -- -165 A A
Drain-Source On Resistance Rds(on) -- 0.016 Ω Ω
Power Dissipation Pd -- 60 W W
Operating Temperature TJ -- -55°C to +150°C °C
Package/Case -- -- TO-252 (ATPAK) --

Key Features

  • Low On-Resistance: Provides efficient power management with minimal voltage drop.
  • High Switching Speed: Enables fast switching for improved system performance.
  • Compact Package: Housed in a small TO-252 package for space-constrained designs.
  • High Power Dissipation: Capable of dissipating high power levels for reliable operation.
  • Enhanced Thermal Performance: Designed to minimize heat buildup and ensure optimal system efficiency.

Applications

  • Switching Power Supplies: Ideal for use in switching power supply circuits.
  • Motor Control: Suitable for motor control applications requiring efficient power management.
  • Inverters: Used in inverter circuits for converting DC power to AC power.

Q & A

  • Q: What is the maximum voltage and current rating of the ATP114-TL-H?
    A: The ATP114-TL-H can handle voltages up to -60V and currents up to -55A.
  • Q: What is the typical on-resistance of the ATP114-TL-H?
    A: The ATP114-TL-H has a low on-resistance, typically measured at 0.016 Ω.
  • Q: What is the maximum power dissipation of the ATP114-TL-H?
    A: The ATP114-TL-H is capable of dissipating up to 60 W of power.
  • Q: What is the operating temperature range of the ATP114-TL-H?
    A: The operating temperature range is from -55°C to +150°C.
  • Q: What package type is the ATP114-TL-H housed in?
    A: The ATP114-TL-H is housed in a TO-252 (ATPAK) package.
  • Q: Is the ATP114-TL-H suitable for high-switching speed applications?
    A: Yes, the ATP114-TL-H is designed for high-switching speed applications.
  • Q: Can the ATP114-TL-H be used in motor control systems?
    A: Yes, it is suitable for motor control applications requiring efficient power management.
  • Q: What are some equivalent or alternative MOSFETs to the ATP114-TL-H?
    A: Alternatives include the STP10NK70Z and IRFZ44N, which offer comparable performance characteristics.
  • Q: Is the ATP114-TL-H still in production?
    A: No, the ATP114-TL-H is listed as obsolete and is no longer manufactured.
  • Q: How should the ATP114-TL-H be connected in a circuit?
    A: Connect the Drain, Gate, and Source terminals to the appropriate connections, ensuring proper voltage levels and gate control for desired switching behavior.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:55A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4000 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:ATPAK (2 leads+tab)
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Similar Products

Part Number ATP114-TL-H ATP214-TL-H ATP104-TL-H ATP112-TL-H ATP113-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Discontinued at Digi-Key Obsolete Obsolete Active
FET Type P-Channel N-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta) 75A (Ta) 75A (Ta) 25A (Ta) 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4.5V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V 8.1mOhm @ 38A, 10V 8.4mOhm @ 38A, 10V 43mOhm @ 13A, 10V 29.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id - - - - -
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 96 nC @ 10 V 76 nC @ 10 V 33.5 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 20 V 4850 pF @ 20 V 3950 pF @ 10 V 1450 pF @ 20 V 2400 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 40W (Tc) 50W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK ATPAK ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab)

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