Overview
The ATP102-TL-H is a P-Channel Power MOSFET produced by onsemi. This device is part of onsemi's portfolio of low to medium voltage MOSFETs, known for their superior performance and reliability in switching applications. The ATP102-TL-H features onsemi's advanced PowerTrench® technology, which enhances its electrical and thermal performance. Although this product is currently discontinued, it remains relevant for understanding and replacing similar components in existing designs.
Key Specifications
| Attribute | Value |
|---|---|
| Channel Type | P-Channel |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | ATPAK |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 31 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.6 V |
| Maximum Power Dissipation | 40 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V |
| Width | 7.3 mm |
| Length | 6.5 mm |
| Height | 1.5 mm |
| Transistor Material | Silicon (Si) |
| Maximum Operating Temperature | +150 °C |
Key Features
- High Current Capability: The ATP102-TL-H can handle a maximum continuous drain current of 40 A, making it suitable for high-power applications.
- Low On-Resistance: With a maximum drain source resistance of 31 mΩ, this MOSFET minimizes energy losses and enhances efficiency.
- Enhancement Mode: The enhancement mode operation ensures that the MOSFET is normally off, reducing the risk of accidental turn-on and improving safety.
- High Gate Threshold Voltage: A maximum gate threshold voltage of 2.6 V provides a robust gate drive requirement, ensuring reliable switching.
- Compact ATPAK Package: The surface-mount ATPAK package is designed for high-power density and ease of integration into modern electronic designs.
- Advanced PowerTrench® Technology: This technology from onsemi offers superior electrical and thermal performance, including reduced switching losses and better thermal management.
Applications
- Power Supplies: The ATP102-TL-H is ideal for use in high-efficiency power supplies due to its low on-resistance and high current handling capabilities.
- Motor Control: It is suitable for motor control applications where high current and low resistance are critical for efficient operation.
- Switching Regulators: The MOSFET's enhancement mode and low on-resistance make it a good choice for switching regulators in various electronic systems.
- Automotive Systems: Its robust performance and high operating temperature make it a candidate for use in automotive power management systems.
Q & A
- What is the maximum continuous drain current of the ATP102-TL-H?
The maximum continuous drain current is 40 A.
- What is the maximum drain source voltage of the ATP102-TL-H?
The maximum drain source voltage is 30 V.
- What package type does the ATP102-TL-H use?
The package type is ATPAK.
- What is the maximum gate threshold voltage of the ATP102-TL-H?
The maximum gate threshold voltage is 2.6 V.
- What is the maximum power dissipation of the ATP102-TL-H?
The maximum power dissipation is 40 W.
- What is the typical gate charge at Vgs=10V for the ATP102-TL-H?
The typical gate charge at Vgs=10V is 34 nC.
- What are the dimensions of the ATP102-TL-H package?
The dimensions are 7.3 mm in width, 6.5 mm in length, and 1.5 mm in height.
- What is the maximum operating temperature of the ATP102-TL-H?
The maximum operating temperature is +150 °C.
- Is the ATP102-TL-H still in production?
No, the ATP102-TL-H is a discontinued product.
- What technology does the ATP102-TL-H use?
The ATP102-TL-H uses onsemi's advanced PowerTrench® technology.
