ATP102-TL-H
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onsemi ATP102-TL-H

Manufacturer No:
ATP102-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 40A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ATP102-TL-H is a P-Channel Power MOSFET produced by onsemi. This device is part of onsemi's portfolio of low to medium voltage MOSFETs, known for their superior performance and reliability in switching applications. The ATP102-TL-H features onsemi's advanced PowerTrench® technology, which enhances its electrical and thermal performance. Although this product is currently discontinued, it remains relevant for understanding and replacing similar components in existing designs.

Key Specifications

Attribute Value
Channel Type P-Channel
Maximum Continuous Drain Current 40 A
Maximum Drain Source Voltage 30 V
Package Type ATPAK
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 31 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.6 V
Maximum Power Dissipation 40 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 34 nC @ 10 V
Width 7.3 mm
Length 6.5 mm
Height 1.5 mm
Transistor Material Silicon (Si)
Maximum Operating Temperature +150 °C

Key Features

  • High Current Capability: The ATP102-TL-H can handle a maximum continuous drain current of 40 A, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum drain source resistance of 31 mΩ, this MOSFET minimizes energy losses and enhances efficiency.
  • Enhancement Mode: The enhancement mode operation ensures that the MOSFET is normally off, reducing the risk of accidental turn-on and improving safety.
  • High Gate Threshold Voltage: A maximum gate threshold voltage of 2.6 V provides a robust gate drive requirement, ensuring reliable switching.
  • Compact ATPAK Package: The surface-mount ATPAK package is designed for high-power density and ease of integration into modern electronic designs.
  • Advanced PowerTrench® Technology: This technology from onsemi offers superior electrical and thermal performance, including reduced switching losses and better thermal management.

Applications

  • Power Supplies: The ATP102-TL-H is ideal for use in high-efficiency power supplies due to its low on-resistance and high current handling capabilities.
  • Motor Control: It is suitable for motor control applications where high current and low resistance are critical for efficient operation.
  • Switching Regulators: The MOSFET's enhancement mode and low on-resistance make it a good choice for switching regulators in various electronic systems.
  • Automotive Systems: Its robust performance and high operating temperature make it a candidate for use in automotive power management systems.

Q & A

  1. What is the maximum continuous drain current of the ATP102-TL-H?

    The maximum continuous drain current is 40 A.

  2. What is the maximum drain source voltage of the ATP102-TL-H?

    The maximum drain source voltage is 30 V.

  3. What package type does the ATP102-TL-H use?

    The package type is ATPAK.

  4. What is the maximum gate threshold voltage of the ATP102-TL-H?

    The maximum gate threshold voltage is 2.6 V.

  5. What is the maximum power dissipation of the ATP102-TL-H?

    The maximum power dissipation is 40 W.

  6. What is the typical gate charge at Vgs=10V for the ATP102-TL-H?

    The typical gate charge at Vgs=10V is 34 nC.

  7. What are the dimensions of the ATP102-TL-H package?

    The dimensions are 7.3 mm in width, 6.5 mm in length, and 1.5 mm in height.

  8. What is the maximum operating temperature of the ATP102-TL-H?

    The maximum operating temperature is +150 °C.

  9. Is the ATP102-TL-H still in production?

    No, the ATP102-TL-H is a discontinued product.

  10. What technology does the ATP102-TL-H use?

    The ATP102-TL-H uses onsemi's advanced PowerTrench® technology.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1490 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:ATPAK (2 leads+tab)
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Part Number ATP102-TL-H ATP202-TL-H ATP302-TL-H ATP104-TL-H ATP106-TL-H ATP108-TL-H ATP602-TL-H ATP107-TL-H ATP112-TL-H ATP103-TL-H ATP101-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel P-Channel P-Channel P-Channel N-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 60 V 30 V 40 V 40 V 600 V 40 V 60 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta) 50A (Ta) 70A (Ta) 75A (Ta) 30A (Ta) 70A (Ta) 5A (Ta) 50A (Ta) 25A (Ta) 55A (Ta) 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 20A, 10V 12mOhm @ 25A, 10V 13mOhm @ 35A, 10V 8.4mOhm @ 38A, 10V 25mOhm @ 15A, 10V 10.4mOhm @ 35A, 10V 2.7Ohm @ 2.5A, 10V 17mOhm @ 25A, 10V 43mOhm @ 13A, 10V 13mOhm @ 28A, 10V 30mOhm @ 13A, 10V
Vgs(th) (Max) @ Id - - - - - - - - - - -
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 27 nC @ 10 V 115 nC @ 10 V 76 nC @ 10 V 29 nC @ 10 V 79.5 nC @ 10 V 13.6 nC @ 10 V 47 nC @ 10 V 33.5 nC @ 10 V 47 nC @ 10 V 18.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±30V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 10 V 1650 pF @ 10 V 5400 pF @ 20 V 3950 pF @ 10 V 1380 pF @ 20 V 3850 pF @ 20 V 350 pF @ 30 V 2400 pF @ 20 V 1450 pF @ 20 V 2430 pF @ 10 V 875 pF @ 10 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 40W (Tc) 40W (Tc) 70W (Tc) 60W (Tc) 40W (Tc) 60W (Tc) 70W (Tc) 50W (Tc) 40W (Tc) 50W (Tc) 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab)

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