ATP106-TL-H
  • Share:

onsemi ATP106-TL-H

Manufacturer No:
ATP106-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 30A ATPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ATP106-TL-H is a high-performance power MOSFET produced by ONSEMI. This P-channel MOSFET is designed for general-purpose switching applications, leveraging ONSEMI's advanced PowerTrench® T1 technology. It offers superior performance, reliability, and efficiency, making it suitable for a wide range of power management and switching applications.

Key Specifications

Parameter Value
Channel Type P Channel
Continuous Drain Current (Id) 30 A
Drain Source Voltage (Vds) 40 V
On Resistance (Rds(on)) 0.019 ohm
Rds(on) Test Voltage 10 V
Gate Source Threshold Voltage Max 2.6 V
Transistor Mounting Surface Mount
Transistor Case Style ATPAK
Power Dissipation (Pd) 40 W
Operating Temperature Max 150°C
No. of Pins 3 Pins

Key Features

  • High Current Capability: The ATP106-TL-H can handle a continuous drain current of 30 A, making it suitable for high-power applications.
  • Low On-Resistance: With an on-resistance of 0.019 ohm, this MOSFET minimizes power losses and enhances efficiency.
  • Advanced PowerTrench® T1 Technology: This technology provides industry-leading RDS, higher power density, reduced switching losses, and better thermal performance.
  • Surface Mount Package: The ATPAK package is designed for surface mount applications, offering ease of integration and compact design.
  • High Operating Temperature: The MOSFET can operate up to a maximum temperature of 150°C, ensuring reliability in demanding environments.

Applications

  • Power Management: Suitable for various power management systems, including DC-DC converters and power supplies.
  • Switching Applications: Ideal for general-purpose switching, motor control, and other high-frequency switching applications.
  • Automotive Systems: Can be used in automotive systems due to its robust performance and high reliability.
  • Industrial Control: Applicable in industrial control systems, such as inverter drives and power factor correction circuits.

Q & A

  1. What is the channel type of the ATP106-TL-H MOSFET?

    The ATP106-TL-H is a P-channel MOSFET.

  2. What is the maximum continuous drain current of the ATP106-TL-H?

    The maximum continuous drain current is 30 A.

  3. What is the drain-source voltage rating of the ATP106-TL-H?

    The drain-source voltage rating is 40 V.

  4. What is the on-resistance (Rds(on)) of the ATP106-TL-H?

    The on-resistance is 0.019 ohm.

  5. What is the gate-source threshold voltage of the ATP106-TL-H?

    The gate-source threshold voltage is up to 2.6 V.

  6. What is the power dissipation capability of the ATP106-TL-H?

    The power dissipation capability is 40 W.

  7. What is the maximum operating temperature of the ATP106-TL-H?

    The maximum operating temperature is 150°C.

  8. What package type does the ATP106-TL-H come in?

    The ATP106-TL-H comes in an ATPAK surface mount package.

  9. Is the ATP106-TL-H RoHS compliant?

    Yes, the ATP106-TL-H is RoHS compliant.

  10. What are some common applications of the ATP106-TL-H?

    Common applications include power management, switching applications, automotive systems, and industrial control systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1380 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:ATPAK (2 leads+tab)
0 Remaining View Similar

In Stock

-
527

Please send RFQ , we will respond immediately.

Similar Products

Part Number ATP106-TL-H ATP108-TL-H ATP206-TL-H ATP107-TL-H ATP101-TL-H ATP102-TL-H ATP103-TL-H ATP104-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel N-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta) 70A (Ta) 40A (Ta) 50A (Ta) 25A (Ta) 40A (Ta) 55A (Ta) 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 15A, 10V 10.4mOhm @ 35A, 10V 16mOhm @ 20A, 10V 17mOhm @ 25A, 10V 30mOhm @ 13A, 10V 18.5mOhm @ 20A, 10V 13mOhm @ 28A, 10V 8.4mOhm @ 38A, 10V
Vgs(th) (Max) @ Id - - - - - - - -
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 79.5 nC @ 10 V 27 nC @ 10 V 47 nC @ 10 V 18.5 nC @ 10 V 34 nC @ 10 V 47 nC @ 10 V 76 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 20 V 3850 pF @ 20 V 1630 pF @ 20 V 2400 pF @ 20 V 875 pF @ 10 V 1490 pF @ 10 V 2430 pF @ 10 V 3950 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 40W (Tc) 60W (Tc) 40W (Tc) 50W (Tc) 30W (Tc) 40W (Tc) 50W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab) ATPAK (2 leads+tab)

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3