NTR1P02LT1G
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onsemi NTR1P02LT1G

Manufacturer No:
NTR1P02LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.3A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR1P02LT1G is a P-Channel power MOSFET produced by onsemi, designed for use in space-sensitive power management circuitry. This miniature surface mount device features a low RDS(on) to minimize power loss and conserve energy, making it ideal for various portable and battery-powered applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage - Continuous VGS ±12 V
Drain Current - Continuous @ TA = 25°C ID -1.3 A
Pulsed Drain Current (tp ≤ 10 μs) IDM -4.0 A
Total Power Dissipation @ TA = 25°C PD 400 mW
Operating and Storage Temperature Range TJ, Tstg -55 to 150 °C
Thermal Resistance - Junction-to-Ambient RθJA 300 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(th) -0.7 to -1.25 V
Static Drain-to-Source On-Resistance RDS(on) 0.140 to 0.22 Ω

Key Features

  • Low RDS(on): Provides higher efficiency and extends battery life.
  • Miniature SOT-23 Surface Mount Package: Saves board space and is ideal for space-sensitive applications.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free and Halide-Free Packages: Available for environmentally friendly designs.

Applications

The NTR1P02LT1G is typically used in DC-DC converters and power management circuits for portable and battery-powered products such as:

  • Computers
  • Printers
  • PCMCIA cards
  • Cellular and cordless telephones

Q & A

  1. What is the maximum drain-to-source voltage for the NTR1P02LT1G?

    The maximum drain-to-source voltage (VDSS) is -20 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is -1.3 A at 25°C.

  3. What is the total power dissipation at 25°C?

    The total power dissipation (PD) is 400 mW at 25°C.

  4. What is the operating and storage temperature range?

    The operating and storage temperature range is -55 to 150°C.

  5. Is the NTR1P02LT1G AEC-Q101 qualified?

    Yes, the NTR1P02LT1G is AEC-Q101 qualified and PPAP capable.

  6. What is the typical application of the NTR1P02LT1G?

    Typical applications include DC-DC converters and power management in portable and battery-powered products.

  7. What is the package type of the NTR1P02LT1G?

    The package type is SOT-23.

  8. Is the NTR1P02LT1G Pb-Free and Halide-Free?

    Yes, Pb-Free and Halide-Free packages are available.

  9. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is -0.7 to -1.25 V.

  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
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MOSFET P-CH 20V 1.3A SOT23-3
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MOSFET P-CH 20V 1.3A SOT23-3

Similar Products

Part Number NTR1P02LT1G NTR1P02T1G NTR1P02LT3G NTR1P02LT1H NTR1P02LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
FET Type P-Channel P-Channel P-Channel - P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V - 20 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1A (Ta) 1.3A (Ta) - 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V 2.5V, 4.5V - -
Rds On (Max) @ Id, Vgs 220mOhm @ 750mA, 4.5V 180mOhm @ 1.5A, 10V 220mOhm @ 750mA, 4.5V - 220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 2.3V @ 250µA 1.25V @ 250µA - 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4 V 2.5 nC @ 5 V 5.5 nC @ 4 V - 5.5 nC @ 4 V
Vgs (Max) ±12V ±20V ±12V - -
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 5 V 165 pF @ 5 V 225 pF @ 5 V - 225 pF @ 5 V
FET Feature - - - - -
Power Dissipation (Max) 400mW (Ta) 400mW (Ta) 400mW (Ta) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Surface Mount - Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) - SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3

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