NVTR01P02LT1G
  • Share:

onsemi NVTR01P02LT1G

Manufacturer No:
NVTR01P02LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.3A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTR01P02LT1G is a P-Channel power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This device is packaged in a miniature SOT-23 surface mount package, which saves board space and is ideal for use in space-sensitive power management circuitry. The MOSFET features ultra-low on-resistance, which enhances efficiency and extends battery life in portable and battery-powered products.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage - Continuous VGS ±12 V
Drain Current - Continuous @ TA = 25°C ID -1.3 A
Pulsed Drain Current (tp ≤ 10 μs) IDM -4.0 A
Total Power Dissipation @ TA = 25°C PD 400 mW
Operating and Storage Temperature Range TJ, Tstg -55 to 150 °C
Thermal Resistance; Junction-to-Ambient RθJA 300 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(th) -0.7 to -1.25 V
Static Drain-to-Source On-State Resistance RDS(on) 0.140 to 0.220 Ω @ VGS = -4.5 V, ID = -0.75 A Ω

Key Features

  • Ultra-low on-resistance (RDS(on)) provides higher efficiency and extends battery life.
  • Miniature SOT-23 surface mount package saves board space.
  • NVTR prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and halide-free packages are available.
  • Ideal for power management in portable and battery-powered products.

Applications

  • DC-DC converters.
  • Computers.
  • Printers.
  • PCMCIA cards.
  • Cellular and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NVTR01P02LT1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is -20 V.

  2. What is the continuous drain current rating at 25°C for the NVTR01P02LT1G?

    The continuous drain current rating at 25°C is -1.3 A.

  3. What is the typical on-resistance (RDS(on)) of the NVTR01P02LT1G?

    The typical on-resistance (RDS(on)) is 0.140 to 0.220 Ω at VGS = -4.5 V, ID = -0.75 A.

  4. What is the operating and storage temperature range for the NVTR01P02LT1G?

    The operating and storage temperature range is -55 to 150°C.

  5. Is the NVTR01P02LT1G AEC-Q101 qualified?
  6. What package type is used for the NVTR01P02LT1G?

    The NVTR01P02LT1G is packaged in a miniature SOT-23 surface mount package.

  7. What are some typical applications for the NVTR01P02LT1G?

    Typical applications include DC-DC converters, computers, printers, PCMCIA cards, and cellular and cordless telephones.

  8. Is the NVTR01P02LT1G Pb-free and RoHS compliant?
  9. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

  10. What is the thermal resistance (RθJA) of the NVTR01P02LT1G?

    The thermal resistance (RθJA) is 300°C/W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.50
933

Please send RFQ , we will respond immediately.

Same Series
NTR1P02LT3G
NTR1P02LT3G
MOSFET P-CH 20V 1.3A SOT23-3
NVTR01P02LT1G
NVTR01P02LT1G
MOSFET P-CH 20V 1.3A SOT23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A