NVTR01P02LT1G
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onsemi NVTR01P02LT1G

Manufacturer No:
NVTR01P02LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.3A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTR01P02LT1G is a P-Channel power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This device is packaged in a miniature SOT-23 surface mount package, which saves board space and is ideal for use in space-sensitive power management circuitry. The MOSFET features ultra-low on-resistance, which enhances efficiency and extends battery life in portable and battery-powered products.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage - Continuous VGS ±12 V
Drain Current - Continuous @ TA = 25°C ID -1.3 A
Pulsed Drain Current (tp ≤ 10 μs) IDM -4.0 A
Total Power Dissipation @ TA = 25°C PD 400 mW
Operating and Storage Temperature Range TJ, Tstg -55 to 150 °C
Thermal Resistance; Junction-to-Ambient RθJA 300 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(th) -0.7 to -1.25 V
Static Drain-to-Source On-State Resistance RDS(on) 0.140 to 0.220 Ω @ VGS = -4.5 V, ID = -0.75 A Ω

Key Features

  • Ultra-low on-resistance (RDS(on)) provides higher efficiency and extends battery life.
  • Miniature SOT-23 surface mount package saves board space.
  • NVTR prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and halide-free packages are available.
  • Ideal for power management in portable and battery-powered products.

Applications

  • DC-DC converters.
  • Computers.
  • Printers.
  • PCMCIA cards.
  • Cellular and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NVTR01P02LT1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is -20 V.

  2. What is the continuous drain current rating at 25°C for the NVTR01P02LT1G?

    The continuous drain current rating at 25°C is -1.3 A.

  3. What is the typical on-resistance (RDS(on)) of the NVTR01P02LT1G?

    The typical on-resistance (RDS(on)) is 0.140 to 0.220 Ω at VGS = -4.5 V, ID = -0.75 A.

  4. What is the operating and storage temperature range for the NVTR01P02LT1G?

    The operating and storage temperature range is -55 to 150°C.

  5. Is the NVTR01P02LT1G AEC-Q101 qualified?
  6. What package type is used for the NVTR01P02LT1G?

    The NVTR01P02LT1G is packaged in a miniature SOT-23 surface mount package.

  7. What are some typical applications for the NVTR01P02LT1G?

    Typical applications include DC-DC converters, computers, printers, PCMCIA cards, and cellular and cordless telephones.

  8. Is the NVTR01P02LT1G Pb-free and RoHS compliant?
  9. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

  10. What is the thermal resistance (RθJA) of the NVTR01P02LT1G?

    The thermal resistance (RθJA) is 300°C/W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.50
933

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Same Series
NTR1P02LT3G
NTR1P02LT3G
MOSFET P-CH 20V 1.3A SOT23-3
NVTR01P02LT1G
NVTR01P02LT1G
MOSFET P-CH 20V 1.3A SOT23-3

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