NTR1P02LT3G
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onsemi NTR1P02LT3G

Manufacturer No:
NTR1P02LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.3A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR1P02LT3G is a P-channel power MOSFET produced by onsemi, designed for use in space-sensitive power management applications. This miniature surface mount device, packaged in a SOT-23 case, is ideal for DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, and cellular devices. The MOSFET features low RDS(on) to minimize power loss and conserve energy, making it highly efficient for various electronic systems.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-20V
Gate-to-Source Voltage (Continuous)VGS±12V
Drain Current (Continuous)ID-1.3A
Pulsed Drain Current (tp ≤ 10 μs)IDM-4.0A
Total Power Dissipation @ TA = 25°CPD400mW
Operating and Storage Temperature RangeTJ, Tstg-55 to 150°C
Thermal Resistance - Junction-to-AmbientRθJA300°C/W
Maximum Lead Temperature for Soldering PurposesTL260°C
Gate Threshold VoltageVGS(th)-0.7 to -1.25V
Static Drain-to-Source On-ResistanceRDS(on)0.140 to 0.22Ω

Key Features

  • Low RDS(on) for higher efficiency and extended battery life.
  • Miniature SOT-23 surface mount package to save board space.
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Pb-free and halide-free packages available.
  • High switching speed with low turn-on and turn-off delay times.
  • Low gate charge and low input, output, and transfer capacitances.

Applications

The NTR1P02LT3G is suitable for a variety of applications, including:

  • DC-DC converters.
  • Power management in portable and battery-powered products such as computers, printers, and cellular devices.
  • PCMCIA cards and other space-sensitive electronic systems.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR1P02LT3G?
    The maximum drain-to-source voltage is -20 V.
  2. What is the continuous drain current rating of the NTR1P02LT3G?
    The continuous drain current rating is -1.3 A.
  3. What is the typical on-resistance of the NTR1P02LT3G?
    The typical on-resistance is 0.140 to 0.22 Ω.
  4. What is the operating temperature range of the NTR1P02LT3G?
    The operating temperature range is -55 to 150 °C.
  5. Is the NTR1P02LT3G AEC-Q101 qualified?
    Yes, the NTR1P02LT3G is AEC-Q101 qualified.
  6. What is the maximum lead temperature for soldering purposes?
    The maximum lead temperature for soldering purposes is 260 °C.
  7. What are the typical applications of the NTR1P02LT3G?
    Typical applications include DC-DC converters and power management in portable and battery-powered products.
  8. Is the NTR1P02LT3G available in Pb-free and halide-free packages?
    Yes, the NTR1P02LT3G is available in Pb-free and halide-free packages.
  9. What is the gate threshold voltage range of the NTR1P02LT3G?
    The gate threshold voltage range is -0.7 to -1.25 V.
  10. What is the total power dissipation rating at TA = 25°C?
    The total power dissipation rating at TA = 25°C is 400 mW.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

$0.43
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Same Series
NTR1P02LT3G
NTR1P02LT3G
MOSFET P-CH 20V 1.3A SOT23-3
NVTR01P02LT1G
NVTR01P02LT1G
MOSFET P-CH 20V 1.3A SOT23-3

Similar Products

Part Number NTR1P02LT3G NTR1P02T3G NTR1P02LT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1A (Ta) 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 220mOhm @ 750mA, 4.5V 180mOhm @ 1.5A, 10V 220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 2.3V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4 V 2.5 nC @ 5 V 5.5 nC @ 4 V
Vgs (Max) ±12V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 5 V 165 pF @ 5 V 225 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 400mW (Ta) 400mW (Ta) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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