NTR1P02T1G
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onsemi NTR1P02T1G

Manufacturer No:
NTR1P02T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR1P02T1G is a P-Channel power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This device is packaged in a miniature SOT-23 surface mount package, which saves board space and is ideal for portable and battery-powered products. The NTR1P02T1G is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS −20 V
Gate-to-Source Voltage - Continuous VGS ±20 V
Drain Current - Continuous @ TA = 25°C ID −1.0 A
Pulsed Drain Current (tp ≤ 1 μs) IDM −2.67 A
Total Power Dissipation @ TA = 25°C PD 400 mW
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Thermal Resistance; Junction-to-Ambient RθJA 300 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(th) −1.1 to −4.0 V
Static Drain-to-Source On-State Resistance (VGS = −10 V, ID = −1.5 A) RDS(on) 0.148 to 0.235 Ω Ω

Key Features

  • Ultra Low On-Resistance: Provides higher efficiency and extends battery life with RDS(on) = 0.180 Ω at VGS = −10 V and RDS(on) = 0.280 Ω at VGS = −4.5 V.
  • Miniature SOT-23 Surface Mount Package: Saves board space and is suitable for compact designs.
  • Pb-Free and RoHS Compliant: Ensures environmental sustainability.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Low Gate Threshold Voltage: Facilitates easier control and switching.

Applications

  • DC-DC Converters
  • Computers
  • Printers
  • PCMCIA Cards
  • Cellular and Cordless Telephones

Q & A

  1. What is the maximum drain-to-source voltage of the NTR1P02T1G?

    The maximum drain-to-source voltage (VDSS) is −20 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is −1.0 A at 25°C.

  3. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient (RθJA) is 300 °C/W.

  4. Is the NTR1P02T1G Pb-free and RoHS compliant?

    Yes, the NTR1P02T1G is Pb-free and RoHS compliant.

  5. What are the typical on-state resistance values?

    The typical on-state resistance (RDS(on)) is 0.180 Ω at VGS = −10 V and 0.280 Ω at VGS = −4.5 V.

  6. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is from −1.1 to −4.0 V.

  7. What are some common applications for the NTR1P02T1G?

    Common applications include DC-DC converters, computers, printers, PCMCIA cards, and cellular and cordless telephones.

  8. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

  9. Is the NTR1P02T1G AEC-Q101 qualified?

    Yes, the NTR1P02T1G is AEC-Q101 qualified and PPAP capable.

  10. What is the input capacitance at VDS = −5 V and VGS = 0 V?

    The input capacitance (Ciss) is 165 pF at VDS = −5 V and VGS = 0 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:165 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
NVR1P02T1G
NVR1P02T1G
MOSFET P-CH 20V 1A SOT-23-3
NTR1P02T1
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MOSFET P-CH 20V 1A SOT23-3
NTR1P02T3
NTR1P02T3
MOSFET P-CH 20V 1A SOT23-3
NTR1P02T3G
NTR1P02T3G
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Similar Products

Part Number NTR1P02T1G NTR1P02T3G NTR1P02LT1G NTR1P02T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 1A (Ta) 1.3A (Ta) 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V 180mOhm @ 1.5A, 10V 220mOhm @ 750mA, 4.5V 180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA 1.25V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 5 V 2.5 nC @ 5 V 5.5 nC @ 4 V 2.5 nC @ 5 V
Vgs (Max) ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 5 V 165 pF @ 5 V 225 pF @ 5 V 165 pF @ 5 V
FET Feature - - - -
Power Dissipation (Max) 400mW (Ta) 400mW (Ta) 400mW (Ta) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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