NTR1P02LT1
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onsemi NTR1P02LT1

Manufacturer No:
NTR1P02LT1
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET P-CH 20V 1.3A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR1P02LT1 is a power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This P-channel MOSFET is packaged in a miniature SOT-23 surface mount package, making it ideal for space-sensitive designs. It features ultra-low on-resistance, which enhances efficiency and extends battery life in portable and battery-powered devices.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS-20V
Gate-to-Source Voltage - ContinuousVGS±12V
Drain Current - Continuous @ TA = 25°CID-1.3A
Pulsed Drain Current (tp ≤ 10 μs)IDM-4.0A
Total Power Dissipation @ TA = 25°CPD400mW
Operating and Storage Temperature RangeTJ, Tstg-55 to 150°C
Thermal Resistance; Junction-to-AmbientRθJA300°C/W
Maximum Lead Temperature for Soldering PurposesTL260°C
Static Drain-to-Source On-State Resistance (VGS = -4.5 V, ID = -0.75 A)RDS(on)0.140 - 0.200Ω
Gate Threshold Voltage (VDS = VGS, ID = -250 μA)VGS(th)-0.7 to -1.25V

Key Features

  • Ultra-low on-resistance (RDS(on)) provides higher efficiency and extends battery life.
  • Miniature SOT-23 surface mount package saves board space.
  • NVTR prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and halide-free packages are available.
  • Low power loss and energy conservation make these devices ideal for space-sensitive power management circuitry.

Applications

  • DC-DC converters.
  • Power management in portable and battery-powered products.
  • Computers.
  • Printers.
  • PCMCIA cards.
  • Cellular and cordless telephones.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR1P02LT1 MOSFET? The maximum drain-to-source voltage (VDSS) is -20 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current (ID) is -1.3 A.
  3. What is the typical on-resistance of the NTR1P02LT1? The typical on-resistance (RDS(on)) is 0.140 to 0.200 Ω at VGS = -4.5 V and ID = -0.75 A.
  4. What are the operating and storage temperature ranges for this MOSFET? The operating and storage temperature range is -55 to 150°C.
  5. Is the NTR1P02LT1 AEC-Q101 qualified? Yes, the NTR1P02LT1 is AEC-Q101 qualified and PPAP capable.
  6. What is the maximum lead temperature for soldering purposes? The maximum lead temperature for soldering purposes is 260°C.
  7. What is the thermal resistance from junction to ambient? The thermal resistance from junction to ambient (RθJA) is 300°C/W.
  8. What are some typical applications of the NTR1P02LT1? Typical applications include DC-DC converters, power management in portable and battery-powered products, computers, printers, PCMCIA cards, and cellular and cordless telephones.
  9. Is the NTR1P02LT1 Pb-free and RoHS compliant? Yes, the NTR1P02LT1 is Pb-free and RoHS compliant.
  10. What is the gate threshold voltage range of the NTR1P02LT1? The gate threshold voltage (VGS(th)) range is -0.7 to -1.25 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:220mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NTR1P02LT1 NTR1P02LT1G NTR1P02LT1H NTR1P02T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete
FET Type P-Channel P-Channel - P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V - 20 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1.3A (Ta) - 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 750mA, 4.5V 220mOhm @ 750mA, 4.5V - 180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA - 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4 V 5.5 nC @ 4 V - 2.5 nC @ 5 V
Vgs (Max) - ±12V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 5 V 225 pF @ 5 V - 165 pF @ 5 V
FET Feature - - - -
Power Dissipation (Max) - 400mW (Ta) - 400mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) - SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3

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