NTB5605PT4G
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onsemi NTB5605PT4G

Manufacturer No:
NTB5605PT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 18.5A D2PAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The NTB5605PT4G is a power MOSFET produced by ON Semiconductor. This component is a P-Channel MOSFET, designed for high-performance applications requiring efficient power management. The NTB5605PT4G is characterized by its high current handling capability and fast switching times, making it suitable for a variety of power switching and power management roles.

Key Specifications

Specification Value
Transistor Type 1 P-Channel
Type MOSFET
Voltage Rating (Vds) 60 V
Current Rating (Id) -18.5 A
Typical Turn-On Delay Time 12.5 ns
Typical Turn-Off Delay Time 29 ns

Key Features

  • High Current Capability: The NTB5605PT4G can handle up to -18.5 A of current, making it suitable for high-power applications.
  • Fast Switching Times: With a typical turn-on delay time of 12.5 ns and a typical turn-off delay time of 29 ns, this MOSFET is ideal for applications requiring quick switching.
  • Low On-Resistance: The MOSFET has a low on-resistance, which minimizes power losses during operation.
  • Robust Construction: The component is designed to withstand various environmental and operational stresses, ensuring reliability in demanding applications.

Applications

  • Power Supplies: The NTB5605PT4G is used in power supply units for its ability to handle high currents and switch quickly.
  • Motor Control: It is suitable for motor control applications due to its high current handling and fast switching capabilities.
  • DC-DC Converters: This MOSFET is often used in DC-DC converter circuits for its efficiency and reliability.
  • Automotive Systems: The component can be used in various automotive systems that require high-power switching.

Q & A

  1. What is the voltage rating of the NTB5605PT4G MOSFET?

    The voltage rating (Vds) of the NTB5605PT4G is 60 V.

  2. What is the current rating of the NTB5605PT4G MOSFET?

    The current rating (Id) of the NTB5605PT4G is -18.5 A.

  3. What are the typical turn-on and turn-off delay times for the NTB5605PT4G?

    The typical turn-on delay time is 12.5 ns, and the typical turn-off delay time is 29 ns.

  4. Is the NTB5605PT4G still in production?

    No, the NTB5605PT4G has been discontinued by ON Semiconductor as part of their product portfolio renewal process.

  5. What are some recommended replacement parts for the NTB5605PT4G?

    ON Semiconductor recommends the NTB25P06 as a replacement for the NTB5605PT4G.

  6. What are some common applications for the NTB5605PT4G?

    Common applications include power supplies, motor control, DC-DC converters, and automotive systems.

  7. What are the key features of the NTB5605PT4G?

    The key features include high current capability, fast switching times, low on-resistance, and robust construction.

  8. How can I obtain the datasheet for the NTB5605PT4G?

    You can download the datasheet from official websites such as ON Semiconductor's website or from distributors like Mouser Electronics.

  9. What is the significance of the 'P-Channel' designation in the NTB5605PT4G?

    The 'P-Channel' designation indicates that the MOSFET is a P-type channel device, which means it is normally on when the gate voltage is at the same potential as the source, and it turns off when the gate voltage is more positive than the source.

  10. How do I handle the discontinuance of the NTB5605PT4G in my current projects?

    You should plan for replacement devices as recommended by ON Semiconductor and ensure to place final lifetime purchase orders within the specified timeframe.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
NTB5605P
NTB5605P
MOSFET P-CH 60V 18.5A D2PAK
NTB5605PG
NTB5605PG
MOSFET P-CH 60V 18.5A D2PAK
NTB5605T4G
NTB5605T4G
MOSFET P-CH 60V 18.5A D2PAK
NTB5605PT4G
NTB5605PT4G
MOSFET P-CH 60V 18.5A D2PAK

Similar Products

Part Number NTB5605PT4G NTB5605T4G NTB5605PT4
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta) 18.5A (Ta) 18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V
Rds On (Max) @ Id, Vgs 140mOhm @ 8.5A, 5V 140mOhm @ 8.5A, 5V 140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 22 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 1190 pF @ 25 V 1190 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 88W (Tc) 88W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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