Overview
The NTB5605PT4 is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a D2PAK case and is known for its low RDS(on) and high current handling capabilities. The NTB5605PT4 is AEC Q101 qualified, ensuring its reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | -60 | V |
Gate-to-Source Voltage | VGS | −20 | V |
Continuous Drain Current (TA = 25°C) | ID | -18.5 | A |
Power Dissipation (TA = 25°C) | PD | 88 | W |
Pulsed Drain Current (tp = 10 µs) | IDM | -55 | A |
Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
Single Pulse Drain-to-Source Avalanche Energy | EAS | 338 | mJ |
Lead Temperature for Soldering Purposes | TL | 260 | °C |
Junction-to-Case Thermal Resistance | RΦJC | 1.7 | °C/W |
Gate Threshold Voltage | VGS(th) | -1.0 to -2.0 | V |
Drain-to-Source On Resistance | RDS(on) | 120 to 140 | mΩ |
Key Features
- Designed for low RDS(on) to minimize power losses.
- Withstands high energy in avalanche and commutation modes, enhancing reliability.
- AEC Q101 qualified for automotive applications, ensuring high reliability and performance.
- Pb-free and RoHS compliant, making it environmentally friendly.
- High continuous drain current of -18.5 A and high pulsed drain current of -55 A.
- Wide operating junction and storage temperature range of -55 to 175°C.
Applications
- Power Supplies: Suitable for high-power supply applications due to its high current handling and low RDS(on).
- PWM Motor Control: Ideal for pulse-width modulation motor control systems requiring high efficiency and reliability.
- Converters: Used in various converter applications such as DC-DC converters and AC-DC converters.
- Power Management: Effective in power management systems that require high performance and low power losses.
Q & A
- What is the maximum drain-to-source voltage of the NTB5605PT4?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous drain current rating of the NTB5605PT4 at 25°C?
The continuous drain current (ID) is -18.5 A at 25°C.
- Is the NTB5605PT4 AEC Q101 qualified?
- What is the typical drain-to-source on resistance (RDS(on)) of the NTB5605PT4?
The typical drain-to-source on resistance (RDS(on)) is 120 to 140 mΩ.
- What are the operating junction and storage temperature ranges for the NTB5605PT4?
The operating junction and storage temperature ranges are -55 to 175°C.
- Is the NTB5605PT4 Pb-free and RoHS compliant?
- What is the maximum power dissipation of the NTB5605PT4 at 25°C?
The maximum power dissipation (PD) is 88 W at 25°C.
- What is the single pulse drain-to-source avalanche energy rating of the NTB5605PT4?
The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.
- What are some common applications of the NTB5605PT4?
- What is the lead temperature for soldering purposes?