NTB5605PT4
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onsemi NTB5605PT4

Manufacturer No:
NTB5605PT4
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 18.5A D2PAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The NTB5605PT4 is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a D2PAK case and is known for its low RDS(on) and high current handling capabilities. The NTB5605PT4 is AEC Q101 qualified, ensuring its reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -60 V
Gate-to-Source Voltage VGS −20 V
Continuous Drain Current (TA = 25°C) ID -18.5 A
Power Dissipation (TA = 25°C) PD 88 W
Pulsed Drain Current (tp = 10 µs) IDM -55 A
Operating Junction and Storage Temperature TJ, TSTG -55 to 175 °C
Single Pulse Drain-to-Source Avalanche Energy EAS 338 mJ
Lead Temperature for Soldering Purposes TL 260 °C
Junction-to-Case Thermal Resistance RΦJC 1.7 °C/W
Gate Threshold Voltage VGS(th) -1.0 to -2.0 V
Drain-to-Source On Resistance RDS(on) 120 to 140

Key Features

  • Designed for low RDS(on) to minimize power losses.
  • Withstands high energy in avalanche and commutation modes, enhancing reliability.
  • AEC Q101 qualified for automotive applications, ensuring high reliability and performance.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • High continuous drain current of -18.5 A and high pulsed drain current of -55 A.
  • Wide operating junction and storage temperature range of -55 to 175°C.

Applications

  • Power Supplies: Suitable for high-power supply applications due to its high current handling and low RDS(on).
  • PWM Motor Control: Ideal for pulse-width modulation motor control systems requiring high efficiency and reliability.
  • Converters: Used in various converter applications such as DC-DC converters and AC-DC converters.
  • Power Management: Effective in power management systems that require high performance and low power losses.

Q & A

  1. What is the maximum drain-to-source voltage of the NTB5605PT4?

    The maximum drain-to-source voltage (VDSS) is -60 V.

  2. What is the continuous drain current rating of the NTB5605PT4 at 25°C?

    The continuous drain current (ID) is -18.5 A at 25°C.

  3. Is the NTB5605PT4 AEC Q101 qualified?
  4. What is the typical drain-to-source on resistance (RDS(on)) of the NTB5605PT4?

    The typical drain-to-source on resistance (RDS(on)) is 120 to 140 mΩ.

  5. What are the operating junction and storage temperature ranges for the NTB5605PT4?

    The operating junction and storage temperature ranges are -55 to 175°C.

  6. Is the NTB5605PT4 Pb-free and RoHS compliant?
  7. What is the maximum power dissipation of the NTB5605PT4 at 25°C?

    The maximum power dissipation (PD) is 88 W at 25°C.

  8. What is the single pulse drain-to-source avalanche energy rating of the NTB5605PT4?

    The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.

  9. What are some common applications of the NTB5605PT4?
  10. What is the lead temperature for soldering purposes?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NTB5605PT4 NTB5605PT4G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta) 18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 140mOhm @ 8.5A, 5V 140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 1190 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 88W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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