NTB5605PG
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onsemi NTB5605PG

Manufacturer No:
NTB5605PG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 60V 18.5A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The NTB5605PG is a high-performance P-Channel power MOSFET produced by onsemi. This device is designed to operate at high power levels, making it suitable for various demanding applications. It features a drain-to-source voltage (VDSS) of -60 V and a continuous drain current (ID) of -18.5 A. The NTB5605PG is known for its low on-resistance (RDS(on)) and high energy handling capabilities in both avalanche and commutation modes. It is also AEC Q101 qualified and RoHS compliant, ensuring reliability and environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID-18.5A
Power Dissipation (TA = 25°C)PD88W
Pulsed Drain Current (tp = 10 μs)IDM-55A
Operating Junction and Storage TemperatureTJ, TSTG-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS338mJ
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Case Thermal ResistanceRθJC1.7°C/W
Drain-to-Source On Resistance (VGS = -5.0 V, ID = -8.5 A)RDS(on)120 mΩ

Key Features

  • Designed for low RDS(on) to minimize power losses.
  • Withstands high energy in avalanche and commutation modes, enhancing reliability.
  • AEC Q101 qualified for automotive applications, ensuring high reliability and performance.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • High continuous drain current and power dissipation capabilities.
  • Low gate threshold voltage and high forward transconductance for efficient switching.

Applications

  • Power Supplies: Suitable for high-power supply designs due to its high current and voltage ratings.
  • PWM Motor Control: Ideal for pulse-width modulation motor control applications requiring high efficiency and reliability.
  • Converters: Used in various converter applications such as DC-DC converters and AC-DC converters.
  • Power Management: Effective in power management systems that require high power handling and low on-resistance.

Q & A

  1. What is the maximum drain-to-source voltage of the NTB5605PG? The maximum drain-to-source voltage (VDSS) is -60 V.
  2. What is the continuous drain current rating of the NTB5605PG at 25°C? The continuous drain current (ID) is -18.5 A at 25°C.
  3. Is the NTB5605PG RoHS compliant? Yes, the NTB5605PG is Pb-free and RoHS compliant.
  4. What is the typical on-resistance (RDS(on)) of the NTB5605PG? The typical on-resistance is 120 mΩ at VGS = -5.0 V and ID = -8.5 A.
  5. What are the operating junction and storage temperatures for the NTB5605PG? The operating junction and storage temperatures range from -55°C to 175°C.
  6. What is the single pulse drain-to-source avalanche energy rating? The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.
  7. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
  8. What is the junction-to-case thermal resistance? The junction-to-case thermal resistance (RθJC) is 1.7 °C/W.
  9. Is the NTB5605PG AEC Q101 qualified? Yes, the NTBV5605 variant is AEC Q101 qualified.
  10. What are some common applications of the NTB5605PG? Common applications include power supplies, PWM motor control, converters, and power management systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number NTB5605PG NTB5605P
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta) 18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 140mOhm @ 8.5A, 5V 140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 1190 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 88W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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