NTB5605PG
  • Share:

onsemi NTB5605PG

Manufacturer No:
NTB5605PG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 60V 18.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTB5605PG is a high-performance P-Channel power MOSFET produced by onsemi. This device is designed to operate at high power levels, making it suitable for various demanding applications. It features a drain-to-source voltage (VDSS) of -60 V and a continuous drain current (ID) of -18.5 A. The NTB5605PG is known for its low on-resistance (RDS(on)) and high energy handling capabilities in both avalanche and commutation modes. It is also AEC Q101 qualified and RoHS compliant, ensuring reliability and environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID-18.5A
Power Dissipation (TA = 25°C)PD88W
Pulsed Drain Current (tp = 10 μs)IDM-55A
Operating Junction and Storage TemperatureTJ, TSTG-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS338mJ
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Case Thermal ResistanceRθJC1.7°C/W
Drain-to-Source On Resistance (VGS = -5.0 V, ID = -8.5 A)RDS(on)120 mΩ

Key Features

  • Designed for low RDS(on) to minimize power losses.
  • Withstands high energy in avalanche and commutation modes, enhancing reliability.
  • AEC Q101 qualified for automotive applications, ensuring high reliability and performance.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • High continuous drain current and power dissipation capabilities.
  • Low gate threshold voltage and high forward transconductance for efficient switching.

Applications

  • Power Supplies: Suitable for high-power supply designs due to its high current and voltage ratings.
  • PWM Motor Control: Ideal for pulse-width modulation motor control applications requiring high efficiency and reliability.
  • Converters: Used in various converter applications such as DC-DC converters and AC-DC converters.
  • Power Management: Effective in power management systems that require high power handling and low on-resistance.

Q & A

  1. What is the maximum drain-to-source voltage of the NTB5605PG? The maximum drain-to-source voltage (VDSS) is -60 V.
  2. What is the continuous drain current rating of the NTB5605PG at 25°C? The continuous drain current (ID) is -18.5 A at 25°C.
  3. Is the NTB5605PG RoHS compliant? Yes, the NTB5605PG is Pb-free and RoHS compliant.
  4. What is the typical on-resistance (RDS(on)) of the NTB5605PG? The typical on-resistance is 120 mΩ at VGS = -5.0 V and ID = -8.5 A.
  5. What are the operating junction and storage temperatures for the NTB5605PG? The operating junction and storage temperatures range from -55°C to 175°C.
  6. What is the single pulse drain-to-source avalanche energy rating? The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.
  7. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
  8. What is the junction-to-case thermal resistance? The junction-to-case thermal resistance (RθJC) is 1.7 °C/W.
  9. Is the NTB5605PG AEC Q101 qualified? Yes, the NTBV5605 variant is AEC Q101 qualified.
  10. What are some common applications of the NTB5605PG? Common applications include power supplies, PWM motor control, converters, and power management systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
597

Please send RFQ , we will respond immediately.

Same Series
NTB5605P
NTB5605P
MOSFET P-CH 60V 18.5A D2PAK
NTB5605PG
NTB5605PG
MOSFET P-CH 60V 18.5A D2PAK
NTB5605T4G
NTB5605T4G
MOSFET P-CH 60V 18.5A D2PAK
NTB5605PT4G
NTB5605PT4G
MOSFET P-CH 60V 18.5A D2PAK

Similar Products

Part Number NTB5605PG NTB5605P
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta) 18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 140mOhm @ 8.5A, 5V 140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 1190 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 88W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP