NTB5605PG
  • Share:

onsemi NTB5605PG

Manufacturer No:
NTB5605PG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 60V 18.5A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTB5605PG is a high-performance P-Channel power MOSFET produced by onsemi. This device is designed to operate at high power levels, making it suitable for various demanding applications. It features a drain-to-source voltage (VDSS) of -60 V and a continuous drain current (ID) of -18.5 A. The NTB5605PG is known for its low on-resistance (RDS(on)) and high energy handling capabilities in both avalanche and commutation modes. It is also AEC Q101 qualified and RoHS compliant, ensuring reliability and environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID-18.5A
Power Dissipation (TA = 25°C)PD88W
Pulsed Drain Current (tp = 10 μs)IDM-55A
Operating Junction and Storage TemperatureTJ, TSTG-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS338mJ
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Case Thermal ResistanceRθJC1.7°C/W
Drain-to-Source On Resistance (VGS = -5.0 V, ID = -8.5 A)RDS(on)120 mΩ

Key Features

  • Designed for low RDS(on) to minimize power losses.
  • Withstands high energy in avalanche and commutation modes, enhancing reliability.
  • AEC Q101 qualified for automotive applications, ensuring high reliability and performance.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • High continuous drain current and power dissipation capabilities.
  • Low gate threshold voltage and high forward transconductance for efficient switching.

Applications

  • Power Supplies: Suitable for high-power supply designs due to its high current and voltage ratings.
  • PWM Motor Control: Ideal for pulse-width modulation motor control applications requiring high efficiency and reliability.
  • Converters: Used in various converter applications such as DC-DC converters and AC-DC converters.
  • Power Management: Effective in power management systems that require high power handling and low on-resistance.

Q & A

  1. What is the maximum drain-to-source voltage of the NTB5605PG? The maximum drain-to-source voltage (VDSS) is -60 V.
  2. What is the continuous drain current rating of the NTB5605PG at 25°C? The continuous drain current (ID) is -18.5 A at 25°C.
  3. Is the NTB5605PG RoHS compliant? Yes, the NTB5605PG is Pb-free and RoHS compliant.
  4. What is the typical on-resistance (RDS(on)) of the NTB5605PG? The typical on-resistance is 120 mΩ at VGS = -5.0 V and ID = -8.5 A.
  5. What are the operating junction and storage temperatures for the NTB5605PG? The operating junction and storage temperatures range from -55°C to 175°C.
  6. What is the single pulse drain-to-source avalanche energy rating? The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.
  7. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
  8. What is the junction-to-case thermal resistance? The junction-to-case thermal resistance (RθJC) is 1.7 °C/W.
  9. Is the NTB5605PG AEC Q101 qualified? Yes, the NTBV5605 variant is AEC Q101 qualified.
  10. What are some common applications of the NTB5605PG? Common applications include power supplies, PWM motor control, converters, and power management systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
597

Please send RFQ , we will respond immediately.

Same Series
NTB5605PG
NTB5605PG
MOSFET P-CH 60V 18.5A D2PAK
NTB5605PT4
NTB5605PT4
MOSFET P-CH 60V 18.5A D2PAK
NTB5605T4G
NTB5605T4G
MOSFET P-CH 60V 18.5A D2PAK
NTB5605PT4G
NTB5605PT4G
MOSFET P-CH 60V 18.5A D2PAK

Similar Products

Part Number NTB5605PG NTB5605P
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta) 18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 140mOhm @ 8.5A, 5V 140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 22 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V 1190 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 88W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220