Overview
The NTB5605PG is a high-performance P-Channel power MOSFET produced by onsemi. This device is designed to operate at high power levels, making it suitable for various demanding applications. It features a drain-to-source voltage (VDSS) of -60 V and a continuous drain current (ID) of -18.5 A. The NTB5605PG is known for its low on-resistance (RDS(on)) and high energy handling capabilities in both avalanche and commutation modes. It is also AEC Q101 qualified and RoHS compliant, ensuring reliability and environmental sustainability.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | -60 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Continuous Drain Current (TA = 25°C) | ID | -18.5 | A |
Power Dissipation (TA = 25°C) | PD | 88 | W |
Pulsed Drain Current (tp = 10 μs) | IDM | -55 | A |
Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
Single Pulse Drain-to-Source Avalanche Energy | EAS | 338 | mJ |
Lead Temperature for Soldering Purposes | TL | 260 | °C |
Junction-to-Case Thermal Resistance | RθJC | 1.7 | °C/W |
Drain-to-Source On Resistance (VGS = -5.0 V, ID = -8.5 A) | RDS(on) | 120 mΩ | mΩ |
Key Features
- Designed for low RDS(on) to minimize power losses.
- Withstands high energy in avalanche and commutation modes, enhancing reliability.
- AEC Q101 qualified for automotive applications, ensuring high reliability and performance.
- Pb-free and RoHS compliant, making it environmentally friendly.
- High continuous drain current and power dissipation capabilities.
- Low gate threshold voltage and high forward transconductance for efficient switching.
Applications
- Power Supplies: Suitable for high-power supply designs due to its high current and voltage ratings.
- PWM Motor Control: Ideal for pulse-width modulation motor control applications requiring high efficiency and reliability.
- Converters: Used in various converter applications such as DC-DC converters and AC-DC converters.
- Power Management: Effective in power management systems that require high power handling and low on-resistance.
Q & A
- What is the maximum drain-to-source voltage of the NTB5605PG? The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous drain current rating of the NTB5605PG at 25°C? The continuous drain current (ID) is -18.5 A at 25°C.
- Is the NTB5605PG RoHS compliant? Yes, the NTB5605PG is Pb-free and RoHS compliant.
- What is the typical on-resistance (RDS(on)) of the NTB5605PG? The typical on-resistance is 120 mΩ at VGS = -5.0 V and ID = -8.5 A.
- What are the operating junction and storage temperatures for the NTB5605PG? The operating junction and storage temperatures range from -55°C to 175°C.
- What is the single pulse drain-to-source avalanche energy rating? The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.
- What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260°C.
- What is the junction-to-case thermal resistance? The junction-to-case thermal resistance (RθJC) is 1.7 °C/W.
- Is the NTB5605PG AEC Q101 qualified? Yes, the NTBV5605 variant is AEC Q101 qualified.
- What are some common applications of the NTB5605PG? Common applications include power supplies, PWM motor control, converters, and power management systems.