Overview
The NTB5605P is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications requiring low on-resistance and high current handling. This device is packaged in a D2PAK case and is Pb-free and RoHS compliant. It is AEC Q101 qualified, ensuring reliability in automotive and other demanding environments. The NTB5605P is optimized for low RDS(on) and can withstand high energy in avalanche and commutation modes, making it suitable for a variety of power management and control applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage | VGS | −20 | V |
| Continuous Drain Current (TA = 25°C) | ID | -18.5 | A |
| Power Dissipation (TA = 25°C) | PD | 88 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -55 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 338 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RJC | 1.7 | °C/W |
| Gate Threshold Voltage | VGS(th) | -1.0 to -2.0 | V |
| Drain-to-Source On Resistance | RDS(on) | 120 to 140 | mΩ |
Key Features
- Designed for low RDS(on) to minimize power losses.
- Withstands high energy in avalanche and commutation modes, enhancing reliability.
- AEC Q101 qualified, ensuring suitability for automotive and other rigorous applications.
- Pb-free and RoHS compliant, meeting environmental standards.
- High continuous drain current of -18.5 A and high pulsed drain current of -55 A.
- Wide operating junction and storage temperature range of -55 to 175°C.
Applications
- Power Supplies: Ideal for high-current power supply designs.
- PWM Motor Control: Suitable for pulse-width modulation motor control systems.
- Converters: Used in various types of converters, including DC-DC and AC-DC.
- Power Management: Essential for managing power in high-performance systems.
Q & A
- What is the maximum drain-to-source voltage of the NTB5605P?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous drain current rating of the NTB5605P at 25°C?
The continuous drain current (ID) is -18.5 A at 25°C.
- Is the NTB5605P AEC Q101 qualified?
- What is the typical drain-to-source on resistance (RDS(on)) of the NTB5605P?
The typical RDS(on) is 120 to 140 mΩ at VGS = -5.0 V and ID = -8.5 A to -17 A.
- What are the operating junction and storage temperature ranges for the NTB5605P?
The operating junction and storage temperature ranges are -55 to 175°C.
- What is the single pulse drain-to-source avalanche energy (EAS) of the NTB5605P?
The single pulse drain-to-source avalanche energy (EAS) is 338 mJ.
- Is the NTB5605P Pb-free and RoHS compliant?
- What is the maximum power dissipation (PD) of the NTB5605P at 25°C?
The maximum power dissipation (PD) is 88 W at 25°C.
- What are some common applications of the NTB5605P?
- What is the junction-to-case thermal resistance (RJC) of the NTB5605P?
The junction-to-case thermal resistance (RJC) is 1.7 °C/W.
