FDC5612
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onsemi FDC5612

Manufacturer No:
FDC5612
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.3A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC5612 is an N-Channel MOSFET designed by onsemi, utilizing the advanced PowerTrench® technology. This device is specifically engineered to enhance the efficiency of DC/DC converters, whether using synchronous or conventional switching PWM controllers. The FDC5612 offers faster switching speeds and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications, making it easier and safer to drive, even at high frequencies. This results in higher overall efficiency in DC/DC power supply designs.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)60V
Drain Current (ID)4.3A
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V0.055Ω
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 6 V0.064Ω
Gate Threshold Voltage (VGS(th))2 - 4V
Gate Charge (Qg)12.5 nC (Typical)nC
Input Capacitance (Ciss)650 pFpF
Output Capacitance (Coss)80 pFpF
Reverse Transfer Capacitance (Crss)35 pFpF
Turn-On Delay Time (td(on))11 - 20 nsns
Turn-On Rise Time (tr)8 - 18 nsns
Turn-Off Delay Time (td(off))19 - 35 nsns
Turn-Off Fall Time (tf)6 - 15 nsns
Package TypeSUPERSOT-6 (TSOT-23-6)
Mounting TypeSMD

Key Features

  • High Performance Trench Technology for extremely low RDS(ON)
  • Low Gate Charge (12.5 nC Typical) for efficient switching
  • Fast Switching Speeds for high-frequency applications
  • Small Footprint SUPERSOT-6 Package (72% smaller than standard SO-8)
  • Pb-Free and RoHS Compliant
  • Optimized for use in high-frequency DC/DC converters

Applications

The FDC5612 is ideal for use in DC/DC converters, particularly those utilizing synchronous or conventional switching PWM controllers. It is suitable for a wide range of applications requiring high efficiency and fast switching, such as power supplies, motor control systems, and other high-frequency power management circuits.

Q & A

  1. What is the maximum drain-source voltage of the FDC5612?
    The maximum drain-source voltage (VDSS) is 60 V.
  2. What is the maximum continuous drain current of the FDC5612?
    The maximum continuous drain current (ID) is 4.3 A.
  3. What is the typical on-state resistance of the FDC5612 at VGS = 10 V?
    The typical on-state resistance (RDS(ON)) at VGS = 10 V is 0.055 Ω.
  4. What is the gate charge of the FDC5612?
    The gate charge (Qg) is typically 12.5 nC.
  5. What package type is the FDC5612 available in?
    The FDC5612 is available in the SUPERSOT-6 (TSOT-23-6) package.
  6. Is the FDC5612 Pb-Free and RoHS Compliant?
    Yes, the FDC5612 is Pb-Free and RoHS Compliant.
  7. What are the typical turn-on and turn-off times of the FDC5612?
    The turn-on delay time (td(on)) is 11-20 ns, the turn-on rise time (tr) is 8-18 ns, the turn-off delay time (td(off)) is 19-35 ns, and the turn-off fall time (tf) is 6-15 ns.
  8. What are the main applications of the FDC5612?
    The FDC5612 is primarily used in DC/DC converters, especially those with synchronous or conventional switching PWM controllers.
  9. What technology is used in the FDC5612?
    The FDC5612 uses the advanced PowerTrench® technology.
  10. Is the FDC5612 suitable for high-frequency applications?
    Yes, the FDC5612 is optimized for use in high-frequency DC/DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:55mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC5612_F095
FDC5612_F095
MOSFET N-CH 60V 4.3A SUPERSOT6

Similar Products

Part Number FDC5612 FDC2612 FDC3612
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) 1.1A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 10V 6V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 10V 725mOhm @ 1.1A, 10V 125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 11 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V 234 pF @ 100 V 660 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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