FDC5612_F095
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onsemi FDC5612_F095

Manufacturer No:
FDC5612_F095
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.3A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC5612 is an N-Channel MOSFET designed by onsemi, specifically to enhance the efficiency of DC/DC converters. It is part of the PowerTrench® series, known for its high performance and low on-resistance. This MOSFET is optimized for use in both synchronous and conventional switching PWM controllers, offering faster switching speeds and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. This results in higher overall efficiency and safer operation, even at high frequencies.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) 4.3 A
Static Drain-Source On-Resistance (RDS(ON)) @ VGS = 10 V 0.055 Ω
Static Drain-Source On-Resistance (RDS(ON)) @ VGS = 6 V 0.064 Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Gate Charge (Qg) 12.5 nC (Typical) nC
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RJA) 78 °C/W °C/W
Thermal Resistance, Junction-to-Case (RJC) 30 °C/W °C/W
Package Type SUPERSOT™-6 (TSOT-23-6)

Key Features

  • High Performance Trench Technology for extremely low RDS(ON)
  • Low Gate Charge (12.5 nC Typical) for faster switching speeds
  • Fast Switching Speed
  • SUPERSOT™-6 Package: Small footprint (72% smaller than standard SO-8) and low profile (1mm thick)
  • Pb-Free and Halide Free Device

Applications

The FDC5612 is designed for use in DC/DC converters, including both synchronous and conventional switching PWM controllers. It is suitable for applications requiring high efficiency, fast switching speeds, and low on-resistance. Typical applications include power supplies, motor control, and other high-frequency switching circuits.

Q & A

  1. What is the drain-source voltage rating of the FDC5612 MOSFET?

    The drain-source voltage (VDS) rating of the FDC5612 is 60 V.

  2. What is the continuous drain current rating of the FDC5612?

    The continuous drain current (ID) rating of the FDC5612 is 4.3 A.

  3. What is the typical gate charge of the FDC5612?

    The typical gate charge (Qg) of the FDC5612 is 12.5 nC.

  4. What is the operating junction temperature range of the FDC5612?

    The operating and storage junction temperature range of the FDC5612 is -55 to +150 °C.

  5. What package type is the FDC5612 available in?

    The FDC5612 is available in the SUPERSOT™-6 (TSOT-23-6) package.

  6. Is the FDC5612 Pb-Free and Halide Free?
  7. What are the typical applications for the FDC5612 MOSFET?

    The FDC5612 is typically used in DC/DC converters, including synchronous and conventional switching PWM controllers, as well as in power supplies, motor control, and other high-frequency switching circuits.

  8. What is the thermal resistance, junction-to-ambient (RJA) of the FDC5612?

    The thermal resistance, junction-to-ambient (RJA) of the FDC5612 is 78 °C/W.

  9. What is the gate threshold voltage range of the FDC5612?

    The gate threshold voltage (VGS(th)) range of the FDC5612 is 2 to 4 V.

  10. How does the FDC5612 improve the efficiency of DC/DC converters?

    The FDC5612 improves the efficiency of DC/DC converters through its high performance trench technology, low gate charge, and fast switching speeds, resulting in higher overall efficiency and safer operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:55mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC5612_F095
FDC5612_F095
MOSFET N-CH 60V 4.3A SUPERSOT6

Similar Products

Part Number FDC5612_F095 FDC2612_F095 FDC3612_F095
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) 1.1A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 10V 6V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 10V 725mOhm @ 1.1A, 10V 125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 11 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V 234 pF @ 100 V 660 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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