FDC2612_F095
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onsemi FDC2612_F095

Manufacturer No:
FDC2612_F095
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 1.1A SUPERSOT6
Delivery:
Payment:
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Product Introduction

Overview

The FDC2612_F095 is an N-Channel MOSFET produced by onsemi, designed to enhance the efficiency of various power management applications. This small signal MOSFET is particularly suited for use in DC/DC converters, whether synchronous or conventional, to improve overall system performance.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current Rating1.1 A
PackageNot specified in available sources, but typically SOT-23 or similar for small signal MOSFETs

Key Features

The FDC2612_F095 features several key attributes that make it a reliable choice for power management:

  • High Voltage Rating: With a drain to source voltage (Vdss) of 200 V, this MOSFET can handle high voltage applications.
  • Low On-Resistance: Although specific on-resistance values are not provided in the available sources, it is generally designed to minimize energy losses.
  • Compact Package: Typically available in small packages like SOT-23, making it suitable for space-constrained designs.

Applications

The FDC2612_F095 is versatile and can be used in a variety of applications, including:

  • DC/DC Converters: Both synchronous and conventional converters benefit from the efficiency and performance of this MOSFET.
  • Power Management Systems: Suitable for various power management needs in electronic devices.
  • Automotive Systems: Can be used in automotive power management due to its robust design and high voltage handling capability.

Q & A

  1. What is the drain to source voltage (Vdss) of the FDC2612_F095?
    The drain to source voltage (Vdss) is 200 V.
  2. What is the current rating of the FDC2612_F095?
    The current rating is 1.1 A.
  3. What type of applications is the FDC2612_F095 suited for?
    It is suited for DC/DC converters, power management systems, and automotive systems.
  4. Is the FDC2612_F095 still in production?
    No, this product is listed as obsolete.
  5. What package types are typically used for the FDC2612_F095?
    Typically, small signal MOSFETs like the FDC2612_F095 are available in packages such as SOT-23.
  6. What are the key features of the FDC2612_F095?
    Key features include high voltage rating, low on-resistance, and compact packaging.
  7. Can the FDC2612_F095 be used in high-power applications?
    While it is designed for efficiency, it is more suited for small signal and low to medium power applications.
  8. What are some alternatives to the FDC2612_F095?
    Alternatives would depend on the specific requirements but generally include other N-Channel MOSFETs from onsemi or other manufacturers.
  9. Is the FDC2612_F095 RoHS compliant?
    Typically, onsemi components are RoHS compliant, but specific compliance details for this part should be verified from official sources.
  10. What is the typical use case for the FDC2612_F095 in DC/DC converters?
    It is used to improve the efficiency of DC/DC converters by minimizing energy losses and enhancing overall system performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:725mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:234 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC2612_F095
FDC2612_F095
MOSFET N-CH 200V 1.1A SUPERSOT6

Similar Products

Part Number FDC2612_F095 FDC3612_F095 FDC5612_F095 FDC2512_F095
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 100 V 60 V 150 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) 2.6A (Ta) 4.3A (Ta) 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 725mOhm @ 1.1A, 10V 125mOhm @ 2.6A, 10V 55mOhm @ 4.3A, 10V 425mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 20 nC @ 10 V 18 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 234 pF @ 100 V 660 pF @ 50 V 650 pF @ 25 V 344 pF @ 75 V
FET Feature - - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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