FDC3612_F095
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onsemi FDC3612_F095

Manufacturer No:
FDC3612_F095
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 2.6A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC3612_F095 is an N-Channel PowerTrench® MOSFET produced by onsemi. This component is designed to enhance the efficiency of DC/DC converters, whether used in synchronous or conventional configurations. Although it is currently listed as obsolete, it remains a significant example of advanced MOSFET technology. The FDC3612_F095 is known for its high performance and reliability in various power management applications.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id)2.6 A
Part StatusObsolete

Key Features

  • High efficiency in DC/DC converters
  • PowerTrench® technology for improved performance
  • Low on-resistance
  • High current handling capability
  • Suitable for both synchronous and conventional DC/DC converter designs

Applications

The FDC3612_F095 is primarily used in power management systems, including DC/DC converters, power supplies, and other high-efficiency power applications. It is particularly beneficial in scenarios where low on-resistance and high current handling are critical.

Q & A

  1. What is the FDC3612_F095? The FDC3612_F095 is an N-Channel PowerTrench® MOSFET produced by onsemi.
  2. What is the drain to source voltage (Vdss) of the FDC3612_F095? The drain to source voltage (Vdss) is 100 V.
  3. What is the continuous drain current (Id) of the FDC3612_F095? The continuous drain current (Id) is 2.6 A.
  4. Is the FDC3612_F095 still in production? No, the FDC3612_F095 is listed as obsolete.
  5. What technology does the FDC3612_F095 use? The FDC3612_F095 uses PowerTrench® MOSFET technology.
  6. What are the primary applications of the FDC3612_F095? The primary applications include DC/DC converters, power supplies, and other high-efficiency power management systems.
  7. Why is the FDC3612_F095 suitable for DC/DC converters? It is suitable due to its high efficiency, low on-resistance, and high current handling capability.
  8. Can the FDC3612_F095 be used in both synchronous and conventional DC/DC converters? Yes, it can be used in both synchronous and conventional DC/DC converter designs.
  9. Where can I find substitutes or alternative package types for the FDC3612_F095? You can find substitutes or alternative package types on the DigiKey website or other electronic component distributors.
  10. What are the key features of the FDC3612_F095? Key features include high efficiency, PowerTrench® technology, low on-resistance, and high current handling capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC3612_F095
FDC3612_F095
MOSFET N-CH 100V 2.6A SUPERSOT6

Similar Products

Part Number FDC3612_F095 FDC5612_F095 FDC2612_F095 FDC3512_F095
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V 200 V 80 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 4.3A (Ta) 1.1A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 10V 6V, 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V 55mOhm @ 4.3A, 10V 725mOhm @ 1.1A, 10V 77mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 18 nC @ 10 V 11 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 50 V 650 pF @ 25 V 234 pF @ 100 V 634 pF @ 40 V
FET Feature - - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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