FDC2512_F095
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onsemi FDC2512_F095

Manufacturer No:
FDC2512_F095
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 1.4A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC2512_F095 is an N-Channel MOSFET from onsemi, designed to enhance the efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET is optimized for low gate charge, low RDS(ON), and fast switching speed, making it suitable for high-performance applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 1.4 A
Pulsed Drain Current (ID) 8 A
Maximum Power Dissipation (PD) 1.6 W
Operating and Storage Junction Temperature Range (TJ, Tstg) -55 to +150 °C
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V, ID = 1.4 A 425 mΩ
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 6 V, ID = 1.3 A 475 mΩ
Thermal Resistance, Junction-to-Ambient (RθJA) 78 °C/W °C/W
Thermal Resistance, Junction-to-Case (RθJC) 30 °C/W °C/W
Input Capacitance (Ciss) 344 pF pF
Output Capacitance (Coss) 22 pF pF
Reverse Transfer Capacitance (Crss) 9 pF pF

Key Features

  • High Performance Trench Technology for Extremely Low RDS(ON)
  • Low Gate Charge (8 nC Typ)
  • High Power and Current Handling Capability
  • Fast Switching Speed
  • Pb-Free and Halide Free Device

Applications

  • DC/DC Converters

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDC2512_F095 MOSFET?

    The maximum drain-source voltage (VDSS) is 150 V.

  2. What is the continuous drain current (ID) rating of the FDC2512_F095?

    The continuous drain current (ID) rating is 1.4 A.

  3. What is the typical static drain-source on-resistance (RDS(ON)) at VGS = 10 V and ID = 1.4 A?

    The typical static drain-source on-resistance (RDS(ON)) is 425 mΩ.

  4. What is the thermal resistance, junction-to-ambient (RθJA), for the FDC2512_F095?

    The thermal resistance, junction-to-ambient (RθJA), is 78 °C/W.

  5. Is the FDC2512_F095 MOSFET Pb-Free and Halide Free?
  6. What is the operating and storage junction temperature range for the FDC2512_F095?

    The operating and storage junction temperature range is -55 to +150 °C.

  7. What is the input capacitance (Ciss) of the FDC2512_F095?

    The input capacitance (Ciss) is 344 pF.

  8. What are the typical turn-on and turn-off delay times for the FDC2512_F095?

    The typical turn-on delay time is 6.5 ns, and the typical turn-off delay time is 22 ns.

  9. What is the maximum power dissipation (PD) for the FDC2512_F095?

    The maximum power dissipation (PD) is 1.6 W.

  10. What is the package type of the FDC2512_F095 MOSFET?

    The package type is SuperSOT-6, surface mount.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:425mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:344 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC2512_F095
FDC2512_F095
MOSFET N-CH 150V 1.4A SUPERSOT6

Similar Products

Part Number FDC2512_F095 FDC2612_F095 FDC3512_F095
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 200 V 80 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) 1.1A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 10V 6V, 10V
Rds On (Max) @ Id, Vgs 425mOhm @ 1.4A, 10V 725mOhm @ 1.1A, 10V 77mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 11 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 344 pF @ 75 V 234 pF @ 100 V 634 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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