FDC2512
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onsemi FDC2512

Manufacturer No:
FDC2512
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 1.4A SUPERSOT6
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FDC2512 is an N-Channel MOSFET designed by onsemi to enhance the efficiency of DC/DC converters. It is optimized for use in both synchronous and conventional switching PWM controllers. This MOSFET is characterized by its low gate charge, low RDS(ON), and fast switching speed, making it suitable for a variety of applications requiring high performance and efficiency.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)150V
Gate-Source Voltage (VGSS)±20V
Continuous Drain Current (ID)1.4A
Pulsed Drain Current (ID)8A
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V425
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 6 V475
Maximum Power Dissipation (PD)1.6W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +150°C
Thermal Resistance, Junction-to-Ambient (RθJA)78°C/W
Thermal Resistance, Junction-to-Case (RθJC)30°C/W

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (8 nC typical)
  • High power and current handling capability
  • Fast switching speed
  • Pb-Free and Halide Free device

Applications

The FDC2512 MOSFET is primarily used in DC/DC converters, where its low RDS(ON) and fast switching capabilities are particularly beneficial. It is suitable for both synchronous and conventional switching PWM controllers, making it a versatile component for various power management applications.

Q & A

  1. What is the maximum drain-source voltage of the FDC2512 MOSFET?
    The maximum drain-source voltage (VDSS) is 150 V.
  2. What is the continuous drain current rating of the FDC2512?
    The continuous drain current (ID) is 1.4 A.
  3. What are the typical values for RDS(ON) at different gate-source voltages?
    RDS(ON) is 425 mΩ at VGS = 10 V and 475 mΩ at VGS = 6 V.
  4. What is the maximum power dissipation of the FDC2512?
    The maximum power dissipation (PD) is 1.6 W.
  5. What is the operating and storage junction temperature range for the FDC2512?
    The operating and storage junction temperature range is -55 to +150 °C.
  6. Is the FDC2512 Pb-Free and Halide Free?
    Yes, the FDC2512 is a Pb-Free and Halide Free device.
  7. What is the typical gate charge of the FDC2512?
    The typical gate charge is 8 nC.
  8. What are the thermal resistance values for the FDC2512?
    The thermal resistance, junction-to-ambient (RθJA), is 78 °C/W, and the thermal resistance, junction-to-case (RθJC), is 30 °C/W.
  9. In what package is the FDC2512 available?
    The FDC2512 is available in a TSOT-23-6 (SUPERSOT-6) package.
  10. What are the primary applications of the FDC2512 MOSFET?
    The primary applications include DC/DC converters using either synchronous or conventional switching PWM controllers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:425mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:344 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC2512
FDC2512
MOSFET N-CH 150V 1.4A SUPERSOT6

Similar Products

Part Number FDC2512 FDD2512 FDC3512 FDC2612
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 80 V 200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) 6.7A (Ta) 3A (Ta) 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 10V
Rds On (Max) @ Id, Vgs 425mOhm @ 1.4A, 10V 420mOhm @ 2.2A, 10V 77mOhm @ 3A, 10V 725mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 11 nC @ 10 V 18 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 344 pF @ 75 V 344 pF @ 75 V 634 pF @ 40 V 234 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 1.6W (Ta) 42W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 TO-252, (D-Pak) SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 TO-252-3, DPak (2 Leads + Tab), SC-63 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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