Overview
The FDC2512 is an N-Channel MOSFET designed by onsemi to enhance the efficiency of DC/DC converters. It is optimized for use in both synchronous and conventional switching PWM controllers. This MOSFET is characterized by its low gate charge, low RDS(ON), and fast switching speed, making it suitable for a variety of applications requiring high performance and efficiency.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Voltage (VDSS) | 150 | V |
Gate-Source Voltage (VGSS) | ±20 | V |
Continuous Drain Current (ID) | 1.4 | A |
Pulsed Drain Current (ID) | 8 | A |
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 10 V | 425 | mΩ |
Static Drain-Source On-Resistance (RDS(ON)) at VGS = 6 V | 475 | mΩ |
Maximum Power Dissipation (PD) | 1.6 | W |
Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
Thermal Resistance, Junction-to-Ambient (RθJA) | 78 | °C/W |
Thermal Resistance, Junction-to-Case (RθJC) | 30 | °C/W |
Key Features
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (8 nC typical)
- High power and current handling capability
- Fast switching speed
- Pb-Free and Halide Free device
Applications
The FDC2512 MOSFET is primarily used in DC/DC converters, where its low RDS(ON) and fast switching capabilities are particularly beneficial. It is suitable for both synchronous and conventional switching PWM controllers, making it a versatile component for various power management applications.
Q & A
- What is the maximum drain-source voltage of the FDC2512 MOSFET?
The maximum drain-source voltage (VDSS) is 150 V. - What is the continuous drain current rating of the FDC2512?
The continuous drain current (ID) is 1.4 A. - What are the typical values for RDS(ON) at different gate-source voltages?
RDS(ON) is 425 mΩ at VGS = 10 V and 475 mΩ at VGS = 6 V. - What is the maximum power dissipation of the FDC2512?
The maximum power dissipation (PD) is 1.6 W. - What is the operating and storage junction temperature range for the FDC2512?
The operating and storage junction temperature range is -55 to +150 °C. - Is the FDC2512 Pb-Free and Halide Free?
Yes, the FDC2512 is a Pb-Free and Halide Free device. - What is the typical gate charge of the FDC2512?
The typical gate charge is 8 nC. - What are the thermal resistance values for the FDC2512?
The thermal resistance, junction-to-ambient (RθJA), is 78 °C/W, and the thermal resistance, junction-to-case (RθJC), is 30 °C/W. - In what package is the FDC2512 available?
The FDC2512 is available in a TSOT-23-6 (SUPERSOT-6) package. - What are the primary applications of the FDC2512 MOSFET?
The primary applications include DC/DC converters using either synchronous or conventional switching PWM controllers.