FDC2612
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onsemi FDC2612

Manufacturer No:
FDC2612
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 1.1A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC2612 is an N-Channel MOSFET designed by onsemi, utilizing their advanced POWERTRENCH® technology. This device is optimized for high performance in DC/DC converters, whether using synchronous or conventional switching PWM controllers. It is characterized by its low gate charge, low RDS(ON), and fast switching speed, making it highly efficient for various power management applications.

Key Specifications

Parameter Ratings Unit
Drain-Source Voltage (VDSS) 200 V
Gate-Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 1.1 A
Maximum Power Dissipation (PD) 1.6 W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance, Junction-to-Ambient (RθJA) 78 °C/W
Thermal Resistance, Junction-to-Case (RθJC) 30 °C/W
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 1.1 A 725 mΩ
Total Gate Charge (Qg) at VDS = 100 V, ID = 1.1 A, VGS = 10 V 8 nC nC

Key Features

  • High Performance Trench Technology for Extremely Low RDS(ON)
  • High Power and Current Handling Capability
  • Fast Switching Speed
  • Low Gate Charge (8 nC Typical)
  • Pb-Free, Halide Free, and RoHS Compliant

Applications

The FDC2612 is primarily used in DC/DC converters, where its low RDS(ON) and fast switching capabilities enhance overall efficiency.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the FDC2612?

    The maximum drain-source voltage (VDSS) of the FDC2612 is 200 V.

  2. What is the continuous drain current (ID) rating of the FDC2612?

    The continuous drain current (ID) rating of the FDC2612 is 1.1 A.

  3. What is the typical static drain-source on resistance (RDS(on)) of the FDC2612 at VGS = 10 V and ID = 1.1 A?

    The typical static drain-source on resistance (RDS(on)) of the FDC2612 at VGS = 10 V and ID = 1.1 A is 725 mΩ.

  4. What is the total gate charge (Qg) of the FDC2612 at VDS = 100 V, ID = 1.1 A, and VGS = 10 V?

    The total gate charge (Qg) of the FDC2612 at VDS = 100 V, ID = 1.1 A, and VGS = 10 V is 8 nC.

  5. Is the FDC2612 Pb-Free and RoHS Compliant?

    Yes, the FDC2612 is Pb-Free, Halide Free, and RoHS Compliant.

  6. What is the operating and storage junction temperature range for the FDC2612?

    The operating and storage junction temperature range for the FDC2612 is -55 to +150°C.

  7. What is the thermal resistance, junction-to-ambient (RθJA), for the FDC2612 when mounted on a 1 in^2 pad of 2 oz copper?

    The thermal resistance, junction-to-ambient (RθJA), for the FDC2612 when mounted on a 1 in^2 pad of 2 oz copper is 78°C/W.

  8. What are the typical turn-on and turn-off delay times for the FDC2612?

    The typical turn-on delay time is 6 ns, and the typical turn-off delay time is 17 ns.

  9. What is the maximum continuous drain-source diode forward current (IS) for the FDC2612?

    The maximum continuous drain-source diode forward current (IS) for the FDC2612 is 1.3 A.

  10. In what package type is the FDC2612 available?

    The FDC2612 is available in a TSOT23 6-Lead (SuperSOT-6) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:725mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:234 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
FDC2612_F095
FDC2612_F095
MOSFET N-CH 200V 1.1A SUPERSOT6

Similar Products

Part Number FDC2612 FDD2612 FDC5612 FDC3612 FDC2512
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi
Product Status Active Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 60 V 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) 4.9A (Ta) 4.3A (Ta) 2.6A (Ta) 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 725mOhm @ 1.1A, 10V 720mOhm @ 1.5A, 10V 55mOhm @ 4.3A, 10V 125mOhm @ 2.6A, 10V 425mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 11 nC @ 10 V 18 nC @ 10 V 20 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 234 pF @ 100 V 234 pF @ 100 V 650 pF @ 25 V 660 pF @ 50 V 344 pF @ 75 V
FET Feature - - - - -
Power Dissipation (Max) 1.6W (Ta) 42W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 TO-252, (D-Pak) SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 TO-252-3, DPak (2 Leads + Tab), SC-63 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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