FDC3612
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onsemi FDC3612

Manufacturer No:
FDC3612
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 2.6A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC3612 is a high-performance N-Channel PowerTrench MOSFET produced by onsemi. This device is designed to enhance the efficiency of DC/DC converters, whether using synchronous or conventional switching PWM controllers. It features low gate charge, low RDS(ON), and fast switching speed, making it ideal for various power management applications.

Key Specifications

Parameter Value
Current (Id) 2.6 A (Ta)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 6 V, 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 50 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package SOT-23-6 Thin, TSOT-23-6, SuperSOT-6
Power Dissipation (Max) 1.6 W (Ta)
Rds On (Max) @ Id, Vgs 125 mΩ @ 2.6 A, 10 V
Vgs (Max) ±20 V
Vgs(th) (Max) @ Id 4 V @ 250 µA

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge (14 nC typical)
  • High power and current handling capability
  • Fast switching speed
  • Pb-free device
  • RDS(on) = 125 mΩ @ VGS = 10 V, RDS(on) = 135 mΩ @ VGS = 6 V

Applications

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Access
  • Military & Civil Aerospace
  • DC/DC Converters

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the FDC3612 MOSFET?

    The maximum drain-to-source voltage (Vdss) is 100 V.

  2. What is the maximum current (Id) rating of the FDC3612?

    The maximum current (Id) rating is 2.6 A (Ta).

  3. What are the typical RDS(on) values for the FDC3612 at different gate voltages?

    RDS(on) = 125 mΩ @ VGS = 10 V, RDS(on) = 135 mΩ @ VGS = 6 V.

  4. What is the gate charge (Qg) of the FDC3612?

    The gate charge (Qg) is 20 nC @ 10 V (max), but typically 14 nC.

  5. What is the operating temperature range of the FDC3612?

    The operating temperature range is -55°C ~ 150°C (TJ).

  6. What package types are available for the FDC3612?

    The FDC3612 is available in SOT-23-6 Thin, TSOT-23-6, and SuperSOT-6 packages.

  7. What are some common applications of the FDC3612 MOSFET?

    Common applications include AC-DC merchant power supplies, external AC-DC merchant power supplies, wireless LAN access, and military & civil aerospace.

  8. Is the FDC3612 a Pb-free device?

    Yes, the FDC3612 is a Pb-free device.

  9. What is the maximum power dissipation of the FDC3612?

    The maximum power dissipation is 1.6 W (Ta).

  10. What is the typical gate-to-source threshold voltage (Vgs(th)) of the FDC3612?

    The typical gate-to-source threshold voltage (Vgs(th)) is 4 V @ 250 µA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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In Stock

$0.63
1,176

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Same Series
FDC3612_F095
FDC3612_F095
MOSFET N-CH 100V 2.6A SUPERSOT6

Similar Products

Part Number FDC3612 FDC5612 FDC2612 FDC3512
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 60 V 200 V 80 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 4.3A (Ta) 1.1A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 10V 6V, 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 2.6A, 10V 55mOhm @ 4.3A, 10V 725mOhm @ 1.1A, 10V 77mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 18 nC @ 10 V 11 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 50 V 650 pF @ 25 V 234 pF @ 100 V 634 pF @ 40 V
FET Feature - - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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