BSS123LT3G
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onsemi BSS123LT3G

Manufacturer No:
BSS123LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS123LT3G is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is manufactured using high cell density, trench MOSFET technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 100 V
Gate-Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 0.17 A
Pulsed Drain Current (ID) 0.68 A
On-State Drain-Source Resistance (RDS(on)) at VGS = 10 V 6 Ω Ω
On-State Drain-Source Resistance (RDS(on)) at VGS = 4.5 V 10 Ω Ω
Input Capacitance (Ciss) at VDS = 25 V, VGS = 0 V, f = 1.0 MHz 21.5 pF pF
Output Capacitance (Coss) 3.52 pF pF
Reverse Transfer Capacitance (Crss) 1.67 pF pF
Operating and Storage Temperature Range (TJ, TSTG) -55 to +150 °C

Key Features

  • High Density Cell Design for Low RDS(on)
  • Rugged and Reliable
  • Compact Industry Standard SOT-23 Surface Mount Package
  • Very Low Capacitance
  • Fast Switching Speed
  • Pb-Free and Halogen Free

Applications

The BSS123LT3G is suitable for various low-voltage, low-current applications, including:

  • Small servo motor control
  • Power MOSFET gate drivers
  • Logic level transistor applications
  • High speed line drivers
  • Power management and power supply applications
  • Switching applications

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the BSS123LT3G?

    The maximum drain-source voltage (VDSS) is 100 V.

  2. What is the continuous drain current (ID) rating of the BSS123LT3G?

    The continuous drain current (ID) rating is 0.17 A.

  3. What is the on-state drain-source resistance (RDS(on)) at VGS = 10 V?

    The on-state drain-source resistance (RDS(on)) at VGS = 10 V is 6 Ω.

  4. What is the operating and storage temperature range of the BSS123LT3G?

    The operating and storage temperature range is -55 to +150 °C.

  5. Is the BSS123LT3G Pb-Free and Halogen Free?
  6. What type of package does the BSS123LT3G come in?

    The BSS123LT3G comes in a compact Industry Standard SOT-23 Surface Mount Package.

  7. What are some typical applications for the BSS123LT3G?

    Typical applications include small servo motor control, power MOSFET gate drivers, logic level transistor applications, high speed line drivers, and power management/power supply applications.

  8. What is the input capacitance (Ciss) of the BSS123LT3G at VDS = 25 V, VGS = 0 V, and f = 1.0 MHz?

    The input capacitance (Ciss) is 21.5 pF.

  9. What is the turn-on delay time (td(on)) of the BSS123LT3G?

    The turn-on delay time (td(on)) is approximately 1.7 to 3.4 ns.

  10. Is the BSS123LT3G suitable for high-speed switching applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS123LT1G
BSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
BVSS123LT1G
BVSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123LT3G BSS123LT1G BSS123LT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.6V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 20 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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