BSS123LT3
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onsemi BSS123LT3

Manufacturer No:
BSS123LT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123LT3 is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This device is fabricated using high cell density, DMOS technology, which ensures low on-state resistance and provides rugged, reliable, and fast switching performance. It is particularly suited for low-voltage, low-current applications and is available in a compact industry-standard SOT-23 surface mount package. The BSS123LT3 is Pb-free and halogen-free, making it compliant with RoHS standards.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)100V
Gate-Source Voltage (VGSS)±20V
Continuous Drain Current (ID)0.17A
Pulsed Drain Current (IDM)0.68A
On-State Resistance (RDS(on)) at VGS = 10 V6Ω
On-State Resistance (RDS(on)) at VGS = 4.5 V10Ω
Input Capacitance (Ciss)21.5pF
Output Capacitance (Coss)3.52pF
Reverse Transfer Capacitance (Crss)1.67pF
Gate Resistance (RG)7.18Ω
Turn-On Delay Time (td(on))1.7 - 3.4ns
Turn-On Rise Time (tr)9 - 18ns
Turn-Off Delay Time (td(off))17 - 31ns
Turn-Off Fall Time (tf)2.4 - 5ns
Total Gate Charge (Qg)1.8 - 2.5nC

Key Features

  • High Density Cell Design for Extremely Low RDS(on)
  • Rugged and Reliable
  • Compact Industry Standard SOT-23 Surface Mount Package
  • Very Low Capacitance
  • Fast Switching Speed
  • Pb-free and Halogen-free, RoHS Compliant

Applications

The BSS123LT3 is suitable for various low-voltage, low-current applications, including:

  • Small servo motor control
  • Power MOSFET gate drivers
  • Logic level transistor applications
  • High-speed line drivers
  • Power management and power supply applications
  • General switching applications

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the BSS123LT3?
    The maximum drain-source voltage (VDSS) is 100 V.
  2. What is the continuous drain current (ID) rating of the BSS123LT3?
    The continuous drain current (ID) rating is 0.17 A.
  3. What is the on-state resistance (RDS(on)) at VGS = 10 V?
    The on-state resistance (RDS(on)) at VGS = 10 V is 6 Ω.
  4. What is the typical input capacitance (Ciss) of the BSS123LT3?
    The typical input capacitance (Ciss) is 21.5 pF.
  5. What is the turn-on delay time (td(on)) of the BSS123LT3?
    The turn-on delay time (td(on)) is between 1.7 and 3.4 ns.
  6. Is the BSS123LT3 Pb-free and halogen-free?
    Yes, the BSS123LT3 is Pb-free and halogen-free, making it RoHS compliant.
  7. What package type is the BSS123LT3 available in?
    The BSS123LT3 is available in a compact industry-standard SOT-23 surface mount package.
  8. What are some typical applications of the BSS123LT3?
    Typical applications include small servo motor control, power MOSFET gate drivers, logic level transistor applications, high-speed line drivers, and general switching applications.
  9. What is the operating temperature range of the BSS123LT3?
    The operating temperature range is -55°C to +150°C.
  10. What is the maximum power dissipation of the BSS123LT3?
    The maximum power dissipation is 0.36 W, with a derate of 2.8 mW/°C above 25°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS123LT3 BSS123LT3G BSS123LT1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 20 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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