BSS123LT1
  • Share:

onsemi BSS123LT1

Manufacturer No:
BSS123LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 100V 170MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123LT1 is a power MOSFET produced by onsemi, designed for a variety of applications requiring low power consumption and high reliability. This N-channel enhancement mode MOSFET is packaged in a SOT-23 (TO-236) case, making it suitable for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, particularly beneficial for automotive and other applications that require stringent quality and reliability standards.

Key Specifications

ParameterSymbolMinTypMaxUnit
Drain-Source VoltageVDSS--100Vdc
Gate-Source Voltage - ContinuousVGS--±20Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs)VGSM--±40Vdc
Drain Current - ContinuousID--0.17A
Drain Current - PulsedIDM--0.68A
Gate Threshold VoltageVGS(th)1.6-2.6Vdc
Static Drain-Source On-ResistancerDS(on)--6.0Ω

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant, ensuring environmental compliance.
  • Low on-resistance (rDS(on)) of up to 6.0 Ω.
  • High drain-source breakdown voltage (VDSS) of 100 V.
  • Compact SOT-23 (TO-236) package for space-saving designs.
  • HBM Class 0A and MM Class M1B ESD protection.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer electronics: Used in low power switching and control circuits.
  • Industrial control: Applied in motor control, power supplies, and other industrial automation systems.
  • Medical devices: Can be used in medical equipment requiring low power and high reliability.

Q & A

  1. What is the maximum drain-source voltage of the BSS123LT1?
    The maximum drain-source voltage (VDSS) is 100 Vdc.
  2. What is the continuous drain current rating of the BSS123LT1?
    The continuous drain current (ID) is 0.17 A.
  3. Is the BSS123LT1 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  4. What is the package type of the BSS123LT1?
    The BSS123LT1 is packaged in a SOT-23 (TO-236) case.
  5. Is the BSS123LT1 Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the gate threshold voltage range of the BSS123LT1?
    The gate threshold voltage (VGS(th)) ranges from 1.6 V to 2.6 V.
  7. What is the maximum static drain-source on-resistance of the BSS123LT1?
    The maximum static drain-source on-resistance (rDS(on)) is 6.0 Ω.
  8. Does the BSS123LT1 have ESD protection?
    Yes, it has HBM Class 0A and MM Class M1B ESD protection.
  9. What are some common applications of the BSS123LT1?
    Common applications include automotive systems, consumer electronics, industrial control, and medical devices.
  10. Where can I find detailed ordering and shipping information for the BSS123LT1?
    Detailed ordering and shipping information can be found in the package dimensions section of the datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
308

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP

Similar Products

Part Number BSS123LT1 BSS123LT1G BSS123LT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.6V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 20 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 225mW (Ta) 225mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP