BSS123LT1
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onsemi BSS123LT1

Manufacturer No:
BSS123LT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 100V 170MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123LT1 is a power MOSFET produced by onsemi, designed for a variety of applications requiring low power consumption and high reliability. This N-channel enhancement mode MOSFET is packaged in a SOT-23 (TO-236) case, making it suitable for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, particularly beneficial for automotive and other applications that require stringent quality and reliability standards.

Key Specifications

ParameterSymbolMinTypMaxUnit
Drain-Source VoltageVDSS--100Vdc
Gate-Source Voltage - ContinuousVGS--±20Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs)VGSM--±40Vdc
Drain Current - ContinuousID--0.17A
Drain Current - PulsedIDM--0.68A
Gate Threshold VoltageVGS(th)1.6-2.6Vdc
Static Drain-Source On-ResistancerDS(on)--6.0Ω

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant, ensuring environmental compliance.
  • Low on-resistance (rDS(on)) of up to 6.0 Ω.
  • High drain-source breakdown voltage (VDSS) of 100 V.
  • Compact SOT-23 (TO-236) package for space-saving designs.
  • HBM Class 0A and MM Class M1B ESD protection.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer electronics: Used in low power switching and control circuits.
  • Industrial control: Applied in motor control, power supplies, and other industrial automation systems.
  • Medical devices: Can be used in medical equipment requiring low power and high reliability.

Q & A

  1. What is the maximum drain-source voltage of the BSS123LT1?
    The maximum drain-source voltage (VDSS) is 100 Vdc.
  2. What is the continuous drain current rating of the BSS123LT1?
    The continuous drain current (ID) is 0.17 A.
  3. Is the BSS123LT1 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  4. What is the package type of the BSS123LT1?
    The BSS123LT1 is packaged in a SOT-23 (TO-236) case.
  5. Is the BSS123LT1 Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the gate threshold voltage range of the BSS123LT1?
    The gate threshold voltage (VGS(th)) ranges from 1.6 V to 2.6 V.
  7. What is the maximum static drain-source on-resistance of the BSS123LT1?
    The maximum static drain-source on-resistance (rDS(on)) is 6.0 Ω.
  8. Does the BSS123LT1 have ESD protection?
    Yes, it has HBM Class 0A and MM Class M1B ESD protection.
  9. What are some common applications of the BSS123LT1?
    Common applications include automotive systems, consumer electronics, industrial control, and medical devices.
  10. Where can I find detailed ordering and shipping information for the BSS123LT1?
    Detailed ordering and shipping information can be found in the package dimensions section of the datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS123LT1 BSS123LT1G BSS123LT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA 2.6V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 20 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 225mW (Ta) 225mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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