BSS123LT1G
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onsemi BSS123LT1G

Manufacturer No:
BSS123LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BSS123LT1G is a small signal N-Channel MOSFET produced by onsemi, designed for general usage in various applications. This device is packaged in a SOT-23 (TO-236) case, making it compact and suitable for space-constrained designs. It is RoHS compliant and AEC-Q101 qualified, ensuring it meets stringent automotive and industrial standards. The BSS123LT1G is part of the PowerTrench® T1 family, known for its high performance and reliability.

Key Specifications

Characteristic Symbol Min Unit
Drain-Source Voltage VDSS - - 100 Vdc
Gate-Source Voltage - Continuous VGS - - ±20 Vdc
Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs) VGSM - - ±40 Vpk
Drain Current - Continuous ID - - 0.17 A
Drain Current - Pulsed IDM - - 0.68 A
Gate Threshold Voltage VGS(th) 1.6 - 2.6 Vdc
On-Resistance (RDS(on)) at VGS = 10 V RDS(on) - - 2.8

Key Features

  • Compact SOT-23 Package: Suitable for space-constrained designs.
  • High Performance: Part of the PowerTrench® T1 family, known for its high performance and reliability.
  • RoHS Compliant and AEC-Q101 Qualified: Ensures compliance with automotive and industrial standards.
  • Low On-Resistance: RDS(on) of 2.8 mΩ at VGS = 10 V.
  • Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
  • ESD Protection: HBM Class 0A, MM Class M1B.

Applications

The BSS123LT1G MOSFET is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for automotive applications requiring high reliability.
  • Industrial Control Systems: Can be used in industrial control circuits where high performance and reliability are crucial.
  • Consumer Electronics: Suitable for use in consumer electronics where space is limited and high performance is required.
  • Power Management: Can be used in power management circuits due to its low on-resistance and high current handling capabilities.

Q & A

  1. What is the maximum drain-source voltage of the BSS123LT1G MOSFET?

    The maximum drain-source voltage (VDSS) is 100 Vdc.

  2. What is the continuous drain current rating of the BSS123LT1G?

    The continuous drain current (ID) is 0.17 A.

  3. What is the gate threshold voltage range of the BSS123LT1G?

    The gate threshold voltage (VGS(th)) ranges from 1.6 V to 2.6 Vdc.

  4. Is the BSS123LT1G RoHS compliant?

    Yes, the BSS123LT1G is RoHS compliant.

  5. What is the on-resistance of the BSS123LT1G at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 2.8 mΩ.

  6. What is the operating temperature range of the BSS123LT1G?

    The junction and storage temperature range from -55°C to +150°C.

  7. Is the BSS123LT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  8. What package type does the BSS123LT1G come in?

    The BSS123LT1G comes in a SOT-23 (TO-236) package.

  9. What is the typical gate charge at VGS = 4.5 V?

    The typical gate charge (Qg) at VGS = 4.5 V is 9 nC.

  10. Does the BSS123LT1G have ESD protection?

    Yes, it has HBM Class 0A and MM Class M1B ESD protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):225mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BVSS123LT1G
BVSS123LT1G
MOSFET N-CH 100V 170MA SOT23-3
BSS123LT3G
BSS123LT3G
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123LT1G BSS123LT3G BSS123LT1
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.8V @ 1mA 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 20 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 225mW (Ta) 225mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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