Overview
The BVSS123LT1G is a power MOSFET produced by onsemi, designed for a variety of applications requiring high reliability and performance. This N-Channel MOSFET is packaged in a SOT-23 case and is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The device is lead-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | Vdc |
| Gate-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Gate-Source Voltage - Non-repetitive (tp ≤ 50 μs) | VGSM | ±40 | Vdc |
| Drain Current - Continuous | ID | 0.17 | A |
| Drain Current - Pulsed | IDM | 0.68 | A |
| Gate Threshold Voltage | VGS(th) | 1.6 - 2.6 | Vdc |
| Static Drain-Source On-Resistance | rDS(on) | 6.0 | Ω |
| Thermal Resistance, Junction-to-Ambient | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free and RoHS compliant, ensuring environmental sustainability.
- HBM Class 0A, MM Class M1B ESD protection.
- Low on-resistance (rDS(on) = 6 Ω) for efficient power handling.
- High drain-source breakdown voltage (VDSS = 100 V) for robust performance.
- Compact SOT-23 package for space-efficient designs.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power management: Used in power management circuits requiring high reliability and low on-resistance.
- Industrial control: Employed in industrial control systems where robust performance and high voltage handling are necessary.
- Consumer electronics: Applied in consumer electronics for efficient power switching and management.
Q & A
- What is the maximum drain-source voltage of the BVSS123LT1G MOSFET?
The maximum drain-source voltage (VDSS) is 100 Vdc.
- Is the BVSS123LT1G MOSFET suitable for automotive applications?
- What is the typical on-resistance of the BVSS123LT1G MOSFET?
The typical static drain-source on-resistance (rDS(on)) is 6 Ω.
- What is the junction and storage temperature range for the BVSS123LT1G MOSFET?
The junction and storage temperature range is -55°C to +150°C.
- Is the BVSS123LT1G MOSFET lead-free and RoHS compliant?
- What is the maximum continuous drain current of the BVSS123LT1G MOSFET?
The maximum continuous drain current (ID) is 0.17 A.
- What is the gate threshold voltage range of the BVSS123LT1G MOSFET?
The gate threshold voltage (VGS(th)) range is 1.6 V to 2.6 V.
- What is the thermal resistance, junction-to-ambient, of the BVSS123LT1G MOSFET?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W.
- What package type is the BVSS123LT1G MOSFET available in?
- What are the ESD protection classes for the BVSS123LT1G MOSFET?
